OPTO Search Results

2sc2824

Abstract: 2SA1184
Contextual Info: TOSHIBA íDISCRETE/OPTOJ Ib DE I TDTTESD a007Etob M |~~ Y ' 9097250 T O SH IB A DISCRETE/ OP TO 56C 07266 ' D JT- 3 1 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) S 2 A 1 1 8 4 Unit in mra AUDIO FREQUENCY POWER A M P L I F I E R APPLICATION S. 7.9 MAX. ^3.1d-Ql5

Contextual Info: ooi7nñ a tî TOSHIBA { DI SC RE TE /OPT O} 9097250 TOSHIBA <DISCRETE/OPTO> 99D 17198 D "F 4 1 -2 / T L R G IO I GaP RED /G R EE N LIGHT EMISSION 4mm DIAMETER I FEATURES S . Ceramic Stem Type ; Milky Lusterless Lens . Low Drive Current, High Intensity Red or Green

1s1555 diode

Abstract: silicon diode 151555 1s1555 silicon diode 1S1555 1s1554 diode 1S1554 1S1553/1S1555
Contextual Info: TOSHIBA W? {DISCRETE/OPTO} 9097250 TOSHIBA DeT| TDT?2SG 0 0 0 ^ 7 D I S C R E T E / O P T O _^ 67C 09297 3 | D. / - Silicon Epitaxial "Planar Type 1S1553-1S1555 Diode Unit in tran GENERAL PURPOSE APPLICATION FOR DETECTOR AND RECTIFIER. FEATURES:

BU326

Abstract: BU326-BU326A 331Z BU326A st bux
Contextual Info: TEXAS INSTR -OPTO} bâ DE IfliblTEt, 003t,t,acl S Ô 9 t 7 26 TEXAS INSTR~<OPTO> 62C 3 6 6 2 9 D BU326, BU326A N-P-N SILICON POWER TRANSISTORS OCTO BER 19 82 - R E V ISE D OC TO BER 1 9 84 60 W at 2 5 ° C Case Temperature 6 A Continuous Collector Current

Contextual Info: 9097250 □□□•^144 □ jp 6 7 C 0 9 1 A4 0 T " * Z l-o l T? TOSHIBA {DISCRETE/OPTO} DFI^GTTaSD TOSHIBA DISCRETE/OPTO LU H i O T (00)Î < O < O < Q- O < a. CO 08 < U e t- ~ L L a ü CL (J ~ CO N $ tT C 3> > CD > > O —G (E oO HS _ a Q. CO CO O J O

2SC1557

Abstract: L39C cub vc 150
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO tpwjimm/fmm L 39C 0 0 4 8 9 Ü T ^ 3 / '2 3 - -If O O VHP , L’HP^CATVffl ° Microwave High Power Amplifier Applications ° VHP, II HP Band CATV Applications MAXIMUM RATINGS (Ta =25°C) CHARACTERISE C

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 Sb T O S H IBA D I S C R E T E / O P T O DE p T D T 7 E S D DDOflDDb 5òC D 08006 T-39-11 SIL IC O N N C H A N N E L M O S TYP È (7T-M0S) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.

2SC503

Abstract: 2SC504 2SA503 2SC503-2SC504 2SC503/Y
Contextual Info: TOSHIBA ÍDISCRETE/OPTO} ~5b » i j SOTTESO 0D0740T O y 2 S C 5 3 2 S C 5 4 SILICON NPN EPIT A X IA L TYPE PCT PROCESS , 5 òC 9097250 TOSHIBA CDISCRETE/OPTO) U7 4 U 9 HIGH FREQUENCY AMPLIFIER APPLICATIONS. o 7*-3 5 W $ ' Unit in mm 09.S9MAX. HIGH SPEED SWITCHING. APPLICATIONS.

Contextual Info: TT ï>Ëf| TOT755O 0D17554 S 990 17224 9097250 TOSHIBA <DISCRETE/OPTO D"T-m-33 TLR358, TLR359, TLR328, TLR329 • RED Color, 13.5ao o.;53")Charactec Height Numerical Display. • Pin Connections for Static Drive • Available Both Polarity of Connections, Common Cathode or Coanon Anode.

TLRA130B

Contextual Info: T O S H IB A íD IS C R E T E /O P T O } 9 B E B 9097250 TOSHIBA DISCRETE/OPTO 99D 17195 D-p^l-ai TLRAI3 0 GaAIAs RED LIGHT EMISSION FEATURES: • Excellent Bright Red • All Plastic Mold Type: Colorless Clear Lens • Low Drive Current, Practical Brightness are Achieved

TLY200

Contextual Info: TT TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA «DISCRETE/OPTO dF I t QTTSSQ OE31. 7CH2 99D 17092 TLY200 GaAsP YELLOW LIGHT EMISSION FEATURESi . ¿2 0 Large Size Lamp Consist of 6 Chips I . Lov Drive Current, High Intensity Yellow Light Emission Recommended Current : If»15— 20mA/Chip

Contextual Info: dT TOSHIBA -CDISCRETE/OPTOï J t OTTESO D017D42 O | ~ 99D 17042 9097250 TOSHIBA DISCRETE/OPTO DT-4l-a¡ TLYI32 GaAsP YELLOW LIGHT EMISSION Unit in ran FEATURES: • High Intensity I • All Plastic Mold Type: Light Yellow Transparent Lens. • Low Drive Current, High Intensity Yellow Light Emission.

TLR4202

Abstract: TLC2207 TL6220 TLR2207 TLC2177 TL62207/TLR2207
Contextual Info: T TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A 99D < D IS C R E T E /O P T O 17259 D T -4 1 -S3 TLG2 I77, TLG4 I72, TLG2207, TLG4202 GREEN COLOR 4 D IG IT S L E D D IS P L A Y * For uje of Static drive connections and available both polarity coonon anode or

AES2510

Abstract: Q751 S2510 P 181 OPTO
Contextual Info: TOSHIBA {DISCRETE/OPTO> 9097250 TOSHIBA DISCRETE/OPTO £vÆ >ÎpV-’îrjî^- m m m ^ v ^ y c r m 39C 005 16 O 7^ 3 /- /S U H P - C '< X n o jssa^'f ?ffl ( CML) o U H P -0 B a n d Low N o i s e o H ig h Speed . f T = 7 GHz , Ö pe = a 5 d B ( f = 2 0 H z )

toshiba tlp

Abstract: TLP1000 TLP1006 OHD 3 - 115 M J-W-13
Contextual Info: TT TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA <DISCRETE/OPTO> DE I S O T T E S O □ □ 1 7 3 cm 99D 17394 D J-W-13 TLP I000, TLP I002, TLP I004, TLP I006 INFRARED L E D + P H O T O IC Un'it 1 b an OPTICAL SWITCH U .2 ± d 2 SHAFT POSITION AND VELOCITY SENSOR

Contextual Info: TOS HIB A -CDISCRETE/OPTOi DE | T G ci7aS0 OODflOME ñ Sh ’ :t\ , 90972SO TOSHIBA {DISCRETE/OPTO 2N5039 56C 080^2 _ _ Io “ IC ~ V CE h a VBE COMMON EMITTER T c= 2 5’C 3 - 2 *> .#«• -n * * i —. 4 .« ,• 05 as 'j ai ao5

BU208 toshiba

Abstract: BU208
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb <DI S C R E T E / O P T O aoL ß F J c]Dt:]7aS0 O O O ñ G T ñ 3 Oö U 9 8 ûT-33~<97 SILICON NPN TRIPLE DIFFUSED M ESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. Unit in mm COLOR TV SWITCHING REGULATOR APPLICATIONS.

TLS153Q

Contextual Info: TT TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO D eT J *10172511 0 0 1 7 0 7 0 1 99D 17078 TLS I 53Q , TLS I 54Q GaAsP R ED L IG H T EM ISSIO N PANEL CIRCUIT INDICATOR I FEATURES: • SUPER-BRIGHT • A ll P l a s t i c Mold Type TLS153Q: L ig h t Red T ran sp aren t Lens

DA 2688

Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Contextual Info: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055

2SD683A

Abstract: 2SD683
Contextual Info: TOSHIBA íDISCRETE/OPTO} 9097250 TOSHIBA Tb CD IS C R E T E / OPT O dT I t OITESO 0D077SD ^ 2SD683 .2SD683A, SILICON NPN TR IP LE DIFFUSED TYPE _ DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS Unit in mm HIGH VOLTAGE AND HIGH POWER SWITCHING APPLICATIONS.

T3j 50

Contextual Info: TOSHIBA -CDISCRETE/OPTO} j DE | TCHTESD DQG5372 □ | SSR ZERO-CROSSTYPE C H A R A C T ER IST IC 4* S s1 «— Drop Out Voltage Drop Out Current V fd è Turn-off time Isolation Resistance . VDR = Rated • . v - 0.5 - 1 - . - I tm = 6 A Vw(RMS)=100Vrms

Optocouplers App Note

Contextual Info: TIL191, TILI 92, TIL193, TIL191A, TIL192A, TIL193A TILI 91B, TIL192B, TIL193B OPTOCOUPLERS D 3 2 6 3 , A P R IL 1 9 8 9 - R E V I S E D S E P T E M B E R 1 9 8 9 Gallium Arsenide Diode Infrared Source • Source Is Optically Coupled to Silicon N-P-N Phototransistor

welder circuit diagram

Abstract: welding rectifier circuit welding rectifier WELDER DIAGRAM 3000BD21
Contextual Info: ^ TOSHIBA -CDISCRETE/OPTO}- DE j TD 1 ?a S D 0 0 0 5 3 4 7 1 I ~T~ Z Z - U RECTIFIER STACK RECTIER STACK FOR DC WELDER Type O u tp u t C u r r e n t ( 2 0 C y c l e s , 10% ) 1600FD2E1W 8000A 3000BD2E1W 13000A 1600FD4B1W 8000 A 3000BD4B1W 13000A C STACK

c2689

Abstract: C2689 equivalent automotive ignition tip162 T1P160 equivalent to tip162
Contextual Info: TEXAS INSTR ÌOPTO> d ìT | 8961 72 6 TEXAS INSTR OPTO 003^.^30 62C 36938 TIPI 60, TIPI 61, TIPI 62 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V ISE D O C T O B E R 1 9 84 50 W at 100°C Case Temperature T-33-29 10 A Rated Continuous Collector Current