OPTO NPN Search Results

OPTO NPN Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8
2SC5200	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=230 V / IC=15 A / hFE=55~160 / VCE(sat)=3.0 V / TO-3P(L)

OPTO NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
OT400 Contextual Info: OPTO TEC HNO LOGY INC OflE D \| bflOE245 DOOOOTB D \| -f- OPTO TECHNOLOGY mmmf TYPE OT 400 MINIATURE PHOTOTRANSISTOR DESCRIPTION Opto Technology’s OT 400 Sensors feature an NPN silicon phototran sisto r m ounted in a m iniature hermetic package. The lensing effect	OCR Scan	bflOE245 OT400-1 OT400-6 OT400-1 OT400-6 OT400	PDF
3 CG 708 Abstract: motion sensor IR TRANSISTOR BH RW H100 Reflective Sensor reflective opto switch Contextual Info: m OPTO bô0224S TECHNOLOGY DDQQSn b INC OPTO TECHNOLOGY REFLECTIVE SWITCH T Y P E OTR 6 5 0 Features • TD-18 reflective sensor ■ .0 3 0 aperture ■ Pho totransistor Description Opto Technology's OTR 650 re flective sensor combines two GaA1 As LEDs and an NPN silicon	OCR Scan	0224S IL60090 3 CG 708 motion sensor IR TRANSISTOR BH RW H100 Reflective Sensor reflective opto switch	PDF
MCT2201 Abstract: Opto-isolator Contextual Info: Issued November 1995 020-638 Data Pack F Transistor opto-isolator Data Sheet Device Transistor output opto-isolator MCT2201 RS stock no. 651-945 MCT2201 The MCT2201 is an opto-isolator with phototransistor output. A gallium arsenide infra-red emitting diode is	Original	MCT2201 MCT2201 1507C 10sec) 260mW 100x1 Opto-isolator	PDF
ir 035 Abstract: MCT2201 Contextual Info: Issued March 1997 232-5626 Data Pack F Transistor opto-isolator Data Sheet Device Transistor output opto-isolator MCT2201 RS stock no. 651-945 MCT2201 The MCT2201 is an opto-isolator with phototransistor output. A gallium arsenide infra-red emitting diode is	Original	MCT2201 MCT2201 1507C 10sec) 260mW 100x1 ir 035	PDF
Contextual Info: ÌMf\| ACHTES0 0□ Q7fi4b 0 \| TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO SILICON NPN TRIPLE DIFFUSED MESA TYPE _ (DARLINGTON POWER)_ INDUSTRIAL APPLICATION Unit in mm HIGH POWER SWITCHING APPLICATIONS. DC-AC POWER INVERTER APPLICATIONS.	OCR Scan	DT-33-35 2SD1034A	PDF
2SB678 Abstract: 0939M TOSHIBA 2SB679 Contextual Info: 9097250 TOSHIBA mT\| TCmESO ~5h TOSHIBA {DISCRETE/OPTO} aa077bb DISCRETE/OPTO SILICON NPN EPITAXIA L TYPE (PCT PROCESS) _ (DARLINGTON POWER)_ Unit in mm 09.39M A X. LOW FREQUENCY MEDIUM POIJER AMPLIFIER AND MEDIUM SPEED SWITCHING APPLICATIONS.	OCR Scan	aa077bb 2SB678 C611ector-Emitter 2SB678 0939M TOSHIBA 2SB679	PDF
opto npn Abstract: OT415 Contextual Info: ai L.fl022L\|S 0 0 0 0 1 4 5 3 OPTO TECHNOLOGY INC OPTO TECHNOLOGY N P N SILICO N PH O TO D A R LIN G T O N T Y P E OT 4 1 5 Features • High cu rre n t gain ■ TO-46 package ■ Herm etically sealed Description Opto Technology's type OT 415 sensor features an NPN	OCR Scan	flD224S 000014S opto npn OT415	PDF
MG50G1BL2 Abstract: mg50g1b mg50g1bl MG50G1 Contextual Info: lb ^FlìDìvaso DQOflsm i TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO MG50G1BL2 _ 5bC 08214 SILICON NPN TRIPLE D IFFUSED TYPE (DARLINGTON POWER MODULE) HIGH POWER SWITCHING APPLICATIONS. Unit in mm FEATURES: . The Collector is Isolated from Ground,	OCR Scan	MG50G1BL2 082L6 MG50G1BL2 mg50g1b mg50g1bl MG50G1	PDF
amp mta 100 Abstract: amp mta-100 MTA-100 Contextual Info: •i t,ÖOE24S □DDDBS'i T OPTO TECHNOLOGY ■ OTI INC 42E D 4 0 OPTO TECHNOLOGY 3 - REFLECTIVE SWITCH T Y P E OTR 6 9 6 Features ■ Photodarlington ■ Low profile * Narrow depth of field to eliminate background interference Description Opto Technology's OTR 6 9 6 consists of a	OCR Scan	OE24S 00D22tÃ amp mta 100 amp mta-100 MTA-100	PDF
Contextual Info: TXPI 1032 4N48 Solid State Opto-Electronic Medium Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring medium CTR gain at low operating currents and high voltage isolation.	Original	-65oC 125oC -55oC 100oC 260oC,	PDF
Contextual Info: LT3573 Isolated Flyback Converter without an Opto-Coupler FEATURES DESCRIPTION 3V to 40V Input Voltage Range 1.25A, 60V Integrated NPN Power Switch Boundary Mode Operation No Transformer Third Winding or Opto-Isolator Required for Regulation n Improved Primary-Side Winding Feedback	Original	LT3573 16-Lead directlyT3758 0V/100V LT3957/LT3958 0V/80V 3803/LTC3803-3 200kHz/300kHz OT-23 LTC3803-5	PDF
Contextual Info: sb TOSHIBA -CDISCRETE/OPTO> 9097250 TOSHIBA ï>F\| ^ a ^ s a 0D 077t,a t T-33-35 56C 07768 <DISCRETE/OPTO SILICON NPN TRIPLE DIFFUSED M ESA TYPE _ DARLINGTON POWER)_ 2SD698 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATION.	OCR Scan	T-33-35 2SD698	PDF
Contextual Info: DiT\| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.	OCR Scan	MG75H6EL1 Ic-75A) Icm75A) MG75H6EL1-1 MG75H6EL1-4 MG150Q2YK1 MG200Q1UK1 MG75Q2YK1 MG50Q2YK1 10Sec.	PDF
Contextual Info: TOSHIBA -CDISCRETE/OPTO} Sb 9097250 TOSHIBA DISCRETE/OPTO DE § TQTTESD □□D77L3 5bC D ü77ò 3 T-33-29 SILICON NPN EPITAXIA L TYPE (PCT PROCESS) (DARLINGTON POWER)_ SWITCHING APPLICATIONS. HAMMER DRIVE, , INDUSTRIAL APPLICATIONS _ Unit in mm	OCR Scan	D77L3 T-33-29 Emitter-300	PDF

Contextual Info: TXPI 1033 4N49 Solid State Opto-Electronic High Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring high CTR gain at low operating currents and high voltage isolation.	Original	-65oC 125oC -55oC 100oC 260oC,	PDF
2N6547 Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA dFJtoTPESO ~5Í CD ISCRETE/OPTO DQOöObS DT'iä 'iS ' 56c 08065 SILICON NPNTRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE Unit in mm SWITCHING APPLICATIONS, HIGH SPEED DC-DC CONVERTER, RELAY AND SOLENOID	OCR Scan	Coll03- 2N6547 2N6547	PDF
Toshiba transistor NPN Ic 50A Abstract: toshiba diode 1A TOSHIBA D MG50N2CK1 50n2 Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TOSHIBA "ha DE I SOTTESO 001ti335 1 90D D I S C R E TE/OPTO SEMICONDUCTOR 16335 D7"-33j35' TOSHIBA GTR MODULE MG50N2CK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.	OCR Scan	001L33S Dr-33-35" MG50N2CK1 TJS1251C EGM-HC50N2CK1-4 Toshiba transistor NPN Ic 50A toshiba diode 1A TOSHIBA D MG50N2CK1 50n2	PDF
md 5408 Abstract: MG300G1UL1 MG300H1UL1 MG300 4.90g transistor ES300 Contextual Info: TOSHIBA - C D I S CRETE/OPTO} TO 9097250 TOSHIBA DISCRETE/OPTO TOSH IBA DE \| TQT75S0 001b03fl 3 90D 16038 SEMICONDUCTOR 0 7-53-3^* TOSHIBA GTR MODULE MG300G1UL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.	OCR Scan	tqt75s0 001l03a MG300G1UL1 09A1A MG300H1UL1-4 md 5408 MG300H1UL1 MG300 4.90g transistor ES300	PDF
Contextual Info: TOSHIBA {DISCRETE/OPTO} "TD DE\| TO^HSO 9097250 TOSHIBA DISCRETE/OPTO tfosììUk ODlbBlS 90D 163 15 3 DT- 33-35 SEMICONDUCTOR TOSHIBA G-TR MODULE TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE MG25M2CK2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.	OCR Scan	MG25M2CK2 50/ia1 EGA-MG25M2CK2-4	PDF
2SC2650 Abstract: QD07S go z60 Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA "Sh DISCRETE/OPTO 2SC2650 DE \| t d eJ7SS0 QD07SÖ1 56C 07581 DT'-JJV? SILICON NPN TRIPLE DIFFUSED TYPE 34.3M AX. 5.3MAX 31 JO SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.	OCR Scan	QD07SÃ 2SC2650 2SC2650 QD07S go z60	PDF
2SD1360 Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb d F \| TG17S5D □ □ 0 7 cIE cì 4 DISCRETE/OPTO “ U 7 ' T-33-29 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) INDUSTRIAL APPLICATIONS Unit in mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.	OCR Scan	TG17S5D 07cI2cI T-33-29 100X100X 2SD1360	PDF
MG15H6EL1 Contextual Info: ~TD TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA <DISCRETE/OPTO> ¿^ashtha SEMICONDUCTOR D Ë Ï TOTTESO DD lt.HM 4 90D 16209 D”T-3 'Ò-'ÒS TOSHIBA GTR MODULE MG15H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.	OCR Scan	MG15H6EL1 EGA-MG15H6EL1-1 MG15H6EL1	PDF
Contextual Info: TOSHIBA' {DISCRETE/OPTO} 9097250 TOSHIBA ¿ f o iiu h a TO DISCRETE/OPTO DE I TCHTSSO ODlbBET 3 90D SEMICONDUCTOR 16329 DT-33-3^ TOSHIBA CTR MODULE 'MG50M2CK2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.	OCR Scan	DT-33-3^ MG50M2CK2 Dr-33-3S	PDF
Contextual Info: TO TOSHIBA {DISCRETE/OPTO} DE I SOTTESO DOItiID ? \| 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D T “3 3 - 3 S 90D 16110 SEM ICO N DU CTO R TOSHIBA GTR MODULE MG300Q1UK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE TENTATIVE HIGH POWER SWITCHING APPLICATIONS.	OCR Scan	MG300Q1UK1	PDF

OPTO NPN Search Results

OPTO NPN Result Highlights (5)

OPTO NPN Datasheets Context Search

OT400

3 CG 708

MCT2201

ir 035

2SB678

opto npn

MG50G1BL2

amp mta 100

2N6547

Toshiba transistor NPN Ic 50A

md 5408

2SC2650

2SD1360

MG15H6EL1