OPTOISOLATOR IC Search Results

HCPL 601

Abstract: jedec package standards so8 cenelec IEC 1010-1 General Safety Requirements Optocoupler 601 6N137 OPTO-ISOLATOR 601 508 so8
Contextual Info: 1 Chapter 1. Introduction 1.1 Optoisolator Safety Standards and Regulatory Environment Optoisolator applications often include environments where high voltages are present. The ability of the optoisolator or optocoupler to sustain and to isolate high voltages, both transient as well as

Contextual Info: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he HI 1J series consists o f a gallium arsenide infrared emitting diode coupled with a light activated silicon bilateral switch, which functions

Infrared Phototransistor

Abstract: TPOWER
Contextual Info: Optoisolator Specifications 4N38, 4N38A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The 4N38 and 4N38A consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package. These

Contextual Info: ÖUALITY TECHNOLOGIES C O R P S7E D 7t*bbfi51 Generic Optoisolator Specifications _ DQQijBgfl i l ? • ÚTV GEPS2001 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor 5 203 2 54 K M N - 15 381 R S m illiw atts m illiam ps am pere

Contextual Info: Generic Optoisolator Specifications_ GEPS2001 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor M IN . M AX. .040 .090 085 012 203 2 64 INFRARED E M ITTIN G DIODE 9 53 3.43 6 66 2.92 6.10 milliwatts milliamps ampere

4N29-4N33

Contextual Info: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E

NTE3090

Abstract: Optoisolator
Contextual Info: NTE3090 Optoisolator Schmitt Trigger Output Description: The NTE3090 is an optoisolator in a 6–Lead DIP type package and contains a gallium arsenide IRED optically coupled to a high–speed integrated detector with a Schmitt Trigger output. This device is

H11K1

Abstract: H11K
Contextual Info: Optoisolator Specifications H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H I IK series consists o f a gallium -alum inum -arsenide, infrared em itting diode coupled with two high voltage silicon Darlingtonconnected phocotransistors which have integral base-emitter resistors

Contextual Info: ÛUALITY TECHNOLOGIES CORP S7E D • 74hLiB51 GOOMlRb TTb Optoisolator Specifications _ H11D1-H11D4 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor * m il l im e t e r SYMBOL' A B C D «C ü T IK in

Contextual Info: Optoisolator Specifications H11A1, H11A2, H11A3, H11A4, H11A5 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e HI 1A1 through H11A5 consist o f a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line

NTE3087

Contextual Info: NTE3087 Optoisolator High Speed, Open Collector, NAND Gate Output Description: The NTE3087 is an optoisolator which combines a GaAsP LED as the emitter and an integrated high gain multi–stage high speed photodetector. The output of the detector circuit is an open collector,

Contextual Info: ÛUALITY TECHNOLOGIES CORP 57E D Generic Optoisolator Specifications _ 74Lfc>fl51 000432b 344 ÖTY T 'H t- >7 G E3020-G E3023 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e GE3020-GE3023 series consists o f a gallium arsen id e, in fra re d em itting

Contextual Info: Optoisolator Specificatio ns_ H11B1, H11B2, H11B3 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier M ILL IM E T E R S M IN . 406 1-01 2 28 3 1• {TO P V IE W I IN FR A R E D EM ITTING DIODE

NTE3041

Contextual Info: NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: D High Current Transfer Ratio: 100% Min @ Spec Conditions

Contextual Info: Optoisolator Specifications H11B255 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier The H ] IB255 consists o f a gallium arsenide infrared em itting diode coupled with a silicon photo-Darlington amplifier in a dual in-line package. This device is also

on3131

Abstract: ON3131 panasonic dc to dc Optoisolator 20-P ON3132 ON3133 ON3134 PANASONIC ce Series
Contextual Info: Panasonic ON3131, ON3132, ON3133, ON3134 Optoisolators O ptoisolators U nit : mm • Outline ON3131 is a DIL type 4-pin single-channel optoisolator which is housed in a small package. This optoisolator series also includes the tw o-channel O N 3132, the three-channel O N 3133, and the fourchannel 3134.

Opto-isolator

Abstract: 2C optoisolator
Contextual Info: Optoisolator Specifications H11G 1, H11G 2 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H I 1G series consists o f a gallium arsen id e, in fra re d em itting d io d e co u p led with a silicon D arlington-connected

Contextual Info: Optoisolator Specifications SL5504 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e SL5504 consists o f a gallium arsenide, infrared em itting diode coupled with a silicon phototransistor in a dual in-line package. T h e SL5504 com plies with UTE requirem ents as per UTE C96-551 ADD2.

moc3020 triac driver

Abstract: MOC302I M0c3020-M0c3023 OPTOISOLATOR TRIAC DRIVER
Contextual Info: Optoisolator Specifications M 0c3020-M 0c3023 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e M O C3020-M CC3023 series consists o f a gallium arsenide, in fra re d em itting diode coupled with a light activated silicon bilateral switch,

Contextual Info: Optoisolator Specifications H11G3 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H U G series consists o f a gallium arsenide, infrared em itting diode coupled with a silicon Darlington-connected phototransistor which has an integral base-emitter resistor to

HIIN2

Contextual Info: Optoisolator H11N1, H11N2, H11N3 Optoisolator GaAIAs Infrared Emitting Diode and MicrpprocessorCompatible High-Speed Schmitt Trigger T h e H I IN series has a gallium -alum inum -arsenide, in fra re d em itting d io d e optically co u p led across a glass isolating

7400 logic gate ic

Abstract: IC TTL 7400 4S00
Contextual Info: Optoisolator Specifications H74A1 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor TTL Interface T h e H74A 1 provides logic-to-logic optical in terfa cin g o f T T L gates w ith guaranteed lev el com patibility in practical specified circuits. T h e

nte3095

Abstract: ir led PHOTODIODE
Contextual Info: NTE3095 Optoisolator Description: The NTE3095 is a dual photocoupler optoisolator in an 8–Lead DIP type package consisting of a pair of Gallium Aluminum Arsenide light emitting diodes and integrated photodetectors. Separate connections for the photodiode bias and output transistor collectors improve the speed up to a hundred

Contextual Info: Optoisolator Specifications 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G a A s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier The 4N29 through 4N33 devices consist of a gallium arsenide infrared em itting diode coupled with a silicon photo-D arlington amplifier in a