OQ 051 Search Results

ATC93LC46

Abstract: 0P-100P N351SX R508A T4 l060 db3 c836 GP1006 C5760 ZAP15 SiS645DX
Contextual Info: o N351SX 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 Oq 24 25 26 27 N351SX REV : 01 COVER PAGE GPIO DEFINITION & POWER CONSUMPTION BLOCK DIAGRAM C P U 1 HOST CPU2(POWER) CLOCK GENERATOR & DDR BUFFER SIS645DX(HOST & AGP/VB) SIS645DX(MEMORY FOR DDR & HYPERZIP)

Contextual Info: UNL£SS OTHERWISE NOTED REV. I P I DIMENSIONS ARE IN INCHES ±.1 [3] ±.01 [.3] ONE PLACE DECIMALS TWO PLACE DECIMALS : TOŒRANCES ARE: .005 [.13] ±.0020 [.051] THREE PLACE DECIMALS ± ANGLES FOUR PLACE DECIMALS ± 2” 5 0 —S T A B LE 1 RIGHT ANGLE LEAD STYLE

Contextual Info: REVISION UNLESS OTHERWISE NOTED T FIG. 1 DIMENSIONS ARE N INCHES ONE PLACE DECIMALS ± .1 [2 .5 ] TITLE: THREE PLACE DECIMALS ±.005[.13] TWO PLACE DECIMALS ±.01[.25 ] FOUR PLACE DECIMALS ±.0020[.051] ANGLES ±2m NO. OF - 0 2 THRU - 5 0 .0 5 0 REF [1 .2 7 ]

Contextual Info: Or, Call Castomer Serrite a1 1-800-548-6132 USA Only} (O BURR-BROWN I b b VCA610 I < O > ADVANCED INFORMATION SUBJECT TO CHANGE (/ cc WIDEBAND VOLTAGE CONTROLLED AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • WIDE GAIN CONTROL RANGE: 80dB

Connettori ITZ

Contextual Info: Connettori ITZ ITZ Connectors Contents Page2 General description 3 Technical characteristics 4 Contacts dimensions 8 Contact arrangement 21 Connector shell styles 39 Wrinkled conduit assembly instructions 40 Accessories 45 How to order Glenair Italia S.p.A. . is a certified company : UNI EN ISO 9001, AQAP 110

PIN14-12

Abstract: Pin14 Pin1-4 tl-130 transformer
Contextual Info: ELECTRICAL CHARACTERISTICS: Inductance: PIN14-12 =1.50mH Min @ lOOKHz ,50mV, 25 Inductance: (PIN5-7)=1.20mH Min @ lOOKHz ,50mV, 25°C Turns Ratio: (PIN14-12) : (PIN1-3)=1:1/1.26 ±5% Turns Ratio: (PIN5-7) : (PIN10-8)=1:2CT ±5% PRI DC Resistance: 0.70 Ohms Max @25°

Contextual Info: 116 Combinationline Filter Choke Common and Differential Mode The series of chokes is intended for use in AC line filters for switching power supplies. They combine common and differential mode filtering in a single component. By using these parts, designers can eliminate two extra

Contextual Info: 10 84 7 2 9 .28 7.0 .11 2.8 .026 0.65 .12 "2.9 .08 2.0 -I NOTES: 1. MATERIAL: SEE TABLE 2. FINISHES: SEE TABLE 3. MATES WITH: INDUSTRY STD. BAYONET LOCKING USB TYPE A 2. MAX PANEL THICKNESS .10 | AUX.VIEW X SCALE 1:1 AUX.VIEW Y SCALE 1:1 1 1/16-18 UNEF ^ 26.9

Receptacle pcb

Abstract: SD-84729-004
Contextual Info: 10 84729 NOTES: 1. MATERIAL: SEE TABLE 2. FINISHES: SEE TABLE 3. MATES WITH: INDUSTRY STD. BAYONET LOCKING USB TYPE A I,. MAX PANEL THICKNESS .10 AUX.VIEW X SCALE 1:1 AUX.VIEW Y SCALE 1:1 U N E F - P AN E L CUTOUT SCALE: 1:1 .97 517 24.5 h, -091 2.30 .276

Contextual Info: AirBorn M K -2 8 3 —025—4 3 5 -2 2 0 R METAL ML—281 - 0 2 5 - 4 3 5 - 220R (PLASTIC) Board (Standard Footprint) to Cable .050" 9 thru 100 Contacts Rugged Board Mount # 2 - 5 6 JACKSCREW (2 PLCS) SEE PAGE MA—5 PLUG RECEPTACLE DIMENSIONS SIZE CONTACT

Contextual Info: BB249 _ /V_ SILICON PLANAR VARIABLE CAPACITANCE DIODE The BB249 is a variable capacitance diode in a miniature glass envelope intended for electronic tuning in v.h.f. television tuners with extended band I FCC and OIRT-norm . Diodes are supplied in matched sets (minimum 120 pieces and divisible by 12) and the capacitance

001104 100 02

Contextual Info: P R O D UC T NO. SEE TABLE PRODUCT NO. GUIDE PIN 9 0 7 8 7 -0 0 1 YES 9 0 7 8 7 -0 0 2 NO r 2 |3 PRODUCT NO. SEE TABLE i P /N GUIDE PIN 9 0 7 8 7 -0 0 3 9 0 7 8 7 -0 0 4 YES NO JZU I L !!i w J ill <2.900 0.114 ~TT GUIDE PIN I i 1 ( o p t io n a l ) V T 0 s

EH 050 AP

Contextual Info: 4 2 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. LOC RELEASED FOR PUBLICATION DI ST REVISIONS AF 50 COPYRIGHT 13 BY AMP INCORPORATED, HARRISBURG, P A . ALL INTERNATIONAL RIGHTS RESERVED. AMP PRODUCTS MAY BE COVERED BY U.S. AND FOREIGN PATENTS AND/OR PATENTS PENDING.

Contextual Info: MODEL CW Wirewound Resistors Commercial, Miniature, Coated FEATURES • High performance for low cost • High-temperature silicone coating • Complete welded construction • High power/size ratio • Excellent stability in operation STANDARD ELECTIifvWa O rC v fn b vnoNS

Contextual Info: INTERNATIONAL RECTIFIER SS î Êr| 4ÖS5I45E GD0SD17 Data Sheet No. PD-2.058B 55C 05097 4855452 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I« R r- i 3-0 f 40CDQ & GQCDQ SERIES AND SDS41 40 and 60 Amp Dual Schottky Center Tap Rectifiers Description/Features

74LVT573

Abstract: 74LVT573MTC 74LVT573MTCX 74LVT573SJ 74LVT573SJX 74LVT573WM 74LVT573WMX LVT573
Contextual Info: ADVANCE INFORMATION Semiconductor LVT573 National 74LVT573 3.3V ABT Octal Transparent Latch with TRI-STATE Outputs General Description Features The LVT573 consists of eight latches with TRI-STATE out­ puts for bus organized system applications. The latches ap­

Contextual Info: P R ELIM IN A R Y BEYOND PERFORMANCE C O M 'L : -5 /7 /1 0 /1 2 I N D : -7 /1 0 /1 2 /1 5 M A C H 5 LV -256 MACH5LV-256/68-5/7/10/12 MACH5LV-256/120-5/7/1 0/12 MACH5LV-256/104-5/7/10/12 MACH5 n/160-5/7/10/12 Fifth Generation MACH Architecture DISTINCTIVE CHARACTERISTICS

Contextual Info: UNLESS OTHERWISE NOTED REV. ONE PLACE D E C IM A L S T W O P L A C E D E C IM A L S IN-PROCESS 1 STAKE SEI— 50 FULL STRIPS M TOLERANCES ARE: DW G N O : 1m m S IN G LE ±.1[2.5] T H R E E P L A C E D E C IM A L S ±.005[.13] A N G L E S E L E M E N T IN T E R F A C E

Contextual Info: RN2110,RN2111 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2110, RN2111 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 1.6 ±0.2 AND DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors • Simplify Circuit Design

Contextual Info: F-206-1 M IN I MATE CONNECTOR SET !piV SPECIFICATIONS For complete specifications see www.samtec.com?! PT1 or www.samtec.com?IPS 1 NO. PINS PER ROW IPT1 01 PLATING OPTION B TAIL OPTION D Insulator Material: Mates w ith: IPS1 Black LCP Contact Material: Phosphor Bronze

TO-264AA

Abstract: APT10050LVR
Contextual Info: APT10050LVR A DVAN CED P ow er Te c h n o lo g y 1000V 21A 0.500Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing der >ity and reduces the on-resistance. Power MOS V™

Contextual Info: NOTESs 1 CONNECTOR M ATERIALS; HOUSING AND INSERT-MOLDED STICKS ARE MADE OF GLASS F ILLED LCPP U.L. 94 V- 0P COLOR 15 BLACK; TERM INALS ARE .0 13/ 0.33) THICK BERYLLIUM COPPER? TERM INAL PLATING IS .0 0 0 0 3 0 / (.0007 6) MIN. GOLD IN CONTACT AREA, AND .0 0 0 IOO/(.0025 4) MIN.

Contextual Info: F-207 M IN I MATE CONNECTOR SET !piV SP EC IFIC A T IO N S For complete specifications see www.samtec.com?! PT1 or www.samtec.com? I PS 1 Insulator Material: 01 PLATING OPTION B TAIL OPTION D OTHER OPTION Mates with: IPS1 Black LCP Contact Material: NO. PINS

Contextual Info: SK 50 DGDL 066 T CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper PI:9 <I <I <I]; PG:9 ='R BNSIA -%2&'' ,.8& */'& '5& /E/&1 =' R BN WXUY SIA =Z R @XN SI =' R BN WXUY SIA =Z R @NU SI <I];R B F <I%,+A .5 R @ +' =Z