KM416C1200AJ
Abstract: ra57
Text: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification
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M5321200AW/AWG
KMM5321200AW/AWG
1Mx32
1Mx16
KMM5321200AW
42-pin
72-pin
KMM5321200AW
KM416C1200AJ
ra57
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Untitled
Abstract: No abstract text available
Text: 1 ,0 4 8 ,5 7 6 W O R D S x 32 BIT D Y N A M IC RAM M O D U LE PRELIMINARY D ESC R IPTIO N The THM321020S is a 1,048,576 words by 32 bits dynamic RAM module which assembled 8 pcs of TC514400J on the printed circuit board. The THM321020S can be as well used as 2,097,152 words by
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THM321020S
TC514400J
THM321020S-80,
THM321020SG-80,
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Untitled
Abstract: No abstract text available
Text: W PF 1 M 3 2 X -9 0 P SC 5 1Mx32 FLASH SIMM PRELIMINARY * FEATURES • ■ Access Time of 90ns ■ 100,000 Erase/Program Cycles Packaging: ■ Organized as 1Mx32 • 80-pin SIM M ■ Commercial Tem perature Range • The module is manufactured w ith four 1Mx8 CMOS flash
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1Mx32
80-pin
Am29F080
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THM401020
Abstract: No abstract text available
Text: 1,048,576 W O R D Sx 4 0 BIT D YN A M IC RAM MODULE DESCRIPTION The THM401020SG is a 1,048,576 words by 40 bits dynamic RAM module which assembled .10 pcs of TC514400J on the printed circuit board. The THM401020SG is optimized for application to the systems which are required high density and
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THM401020SG
TC514400J
775mW
THMxxxxxx-80)
950mW
THMxxxxxx-10)
B-100
THM401020SG-80,
B-101
THM401020
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Untitled
Abstract: No abstract text available
Text: n u N EW PRODUCT HB56G51236CC Series 524,288-WordX 36-Bit High Density Dynamic RAM Card 0H IT A C H 1 Rev.2 Ju n . 30,1992 Description The HB56G51236CC is a 512KX36 dynam ic RA M Card, mounted 4 pieces of 4M bit D RA M HM 514900LTT sealed in T S O P package.
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HB56G51236CC
288-WordX
36-Bit
512KX36
514900LTT)
88-pin
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Nippon capacitors
Abstract: No abstract text available
Text: HB56SW872ESNJ Series, HB56SW864ESNJ Series 8.388.608-word x 72-bit High Density Dynamic RAM Module 8 .3 8 8 .6 0 8 -w o r d x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-764A Z Rev. 10 Apr. 4, 1997 Description The HB56SW872ESNJ, HB56SW864ESNJ belong to 8 Byte DIMM (Dual In-line Memory Module)
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HB56SW872ESNJ
HB56SW864ESNJ
608-word
72-bit
64-bit
ADE-203-764A
HB56SW872ESNJ,
16-Mbit
Nippon capacitors
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V442
Abstract: No abstract text available
Text: ADVANCE MICRON I m “ rn,“f,.T M T24D836 8M EGX 36, 16 M EGX 18 D R A MM O D U LE DRAM MODULE 8 MEG X 36,16 MEG x18 NEW I FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS 72-Pin SIMM ( 1 - 22) MT24D836M/G nfmrnTTmTtmrnnTrnrrrrm MARKING • Timing
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72-pin
104mW
152mW
048-cycle
MT24D836M/G
MT24DS36
C1992,
T24D836
A0-A10;
V442
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MT58LC64K
Abstract: 36B3
Text: ADVANCED MT58LC64K32/36B3 64K X 32/36 SYNCBURST SRAM M IC R O N 64K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • • • • • • • • • • PIN ASSIGNMENT (Top View Fast access times: 8.5, 9, 10, 11 and 12ns
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MT58LC64K32/36B3
100-lead
MT58LC64K
36B3
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Flash SIMM 80 programmer
Abstract: GTO MODULE RASH TME 57 473745 A1-A16-V
Text: ^EDI EDI7F32128C ELECTRONIC 0E9GN& NC.I 128Kx32 Flash Module 128Kx32 Flash Module Features 128Kx32 C M O S Flash Module The E D I Flash Family is a five-volt-only in system Flash program Fast R ead A c c e ss Time-100ns mable and eraseable read only memory module. The modules are
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EDI7F32128C
128Kx32
Time-100ns
Time-10ms
EDI7F32128C100BNC
EDI7F32128C120BNC
EDI7F32128C150BNC
EDI7F32128C1OOBAC
Flash SIMM 80 programmer
GTO MODULE
RASH
TME 57
473745
A1-A16-V
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MH8M325D
Abstract: No abstract text available
Text: I PmUmm&ry Spm:. MITSUBISHI LSls MH8M325DJ/DNJ-5,-6,-7 HYPER PAGE MODE 268435456-BIT 8388608-WQRD BY 32-BIT DYNAMIC RAM PIN CONFIGURATION (TOP VIEW) [Double side] DESCRIPTION The MH8M325DJ/DNJ is 8388608 -word x 32-bits dynamic RAM. This consists of sixteen industry standard 4M x 4 dynamic
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MH8M325DJ/DNJ-5
268435456-BIT
8388608-WQRD
32-BIT
MH8M325DJ/DNJ
32-bits
MH8M325D
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cd 1619 CP AUDIO
Abstract: s48c CLEVO SIS-630S c319c PS2032 MF3 IC D41 sam AA121SJ03 z326 IC601
Text: s ß u j M B j Q o j e u i e i | o 0 FREQUENCY BSEL1 R 14 3 .a m . “ GTT H srr VREF VREF VREF VREF VREF VREF VREF VREF VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT VCCT/CPUVCC
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66MHz
00MHz
133MHz
178\i
11FS2
114EK
TB114EK
T-323
470fi
D114EK
cd 1619 CP AUDIO
s48c
CLEVO
SIS-630S
c319c
PS2032
MF3 IC D41 sam
AA121SJ03
z326
IC601
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Untitled
Abstract: No abstract text available
Text: M IC R O N I DRAM . « . Ä MT24D236 2 MEG X 36, 4 MEG X 18 DRAM MODULE 2 MEG x 36>4 MEG x 18 « FAST PAGE MODE MT24D236 LOW POWER, P EXTENDED Y T P M n p n R REFRESH F (MT24D236 L) MODULE I V I v U v L L FEATURES • Industry-standard pinout in a 72-pin single-in-line
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MT24D236
MT24D236)
MT24D236
72-pin
024-cycle
MT240236
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0015142
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b 7 E ]> • DDS I SHGK 7 *b4 1 4 E D 0 1 5 1 4 0 KMM5361000B2/B2G DRAM MODULES 1M x36 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION Perform ance range: tRAC tcAC tRC KM M5361000B2-6 60ns 15ns 110ns KMM5361000B2-7 70ns 20ns
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KMM5361000B2/B2G
M5361000B2-6
110ns
KMM5361000B2-7
130ns
M5361000B2-8
150ns
M5361000B2
5361000B2
20-pin
0015142
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HM5117400J
Abstract: No abstract text available
Text: \ i h , N ü n l b c * M l ! I / / ' 7 NEWPRODUCT HB56D836B Series 8,3 8 8 ,6 0 8 -W o rd X 3 6 -B it H ig h D e n s ity D y n a m ic RAM M odule Rev.O - PRO D UCT P R E V IE W - ^ H I T A P . H l Dec. 24. 1991 D e sc r ip tio n T he H B 5 6 D 8 3 6 B is a 8M X 36 dynam ic R A M module, mounted 16 pieces of 16Mbit D R A M
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HB56D836B
16Mbit
1IM511740QJ
72-pin
HM5117400J
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Untitled
Abstract: No abstract text available
Text: Preliminary KM432V515 CMOS DRAM 512K x 32Bit CMOS Quad CAS DRAM with EDO DESCRIPTION This is a 524,288 x 32 bit Extended Data Out CMOS DRAM. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +3.3V, refresh cycle 1K, access time -6, power consumption Normal or Low power and SOJ package type are features of this device. This device has CAS-before-ftAS refresh, RAS-only
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KM432V515
32Bit
512Kx32
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Untitled
Abstract: No abstract text available
Text: EDI8F3232C W D I 32KX32 SRAM Module ELECTRONIC. DESIGNS, INC 32KX32Static RAM CHIOS, Hitfi Speed Module Features TTie EDI8F3232C is a high speed megabit Static RAM 32Kx32 bit CMOS Static module organized as 32Kx32. This module is constructed Random Access Memory
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EDI8F3232C
32KX32
32KX32Static
EDI8F3232C
32Kx32.
four32Kx8
1f98ECO
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Untitled
Abstract: No abstract text available
Text: HITACHI/ LOGIC/ARRAYS/HEH M41t.E03 S1E 0011500 7b6 HB56D236B/SB Series-n r - 2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56D236B/SB/BS/SBS is a 2M x 36 dynamic RAM module, mounted 16 pieces of 4 Mbit DRAM
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HB56D236B/SB
152-Word
36-Bit
HB56D236B/SB/BS/SBS
HM514400JP/AJ)
HM511000JP)
HM511000ATS)
HB56D236SB/
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THM321020
Abstract: No abstract text available
Text: THM321020S-80, 10 THM321020SG-80, 10 1,048,576 W O RDS X 32 BIT D Y N A M IC RAM M O D U LE PRELIMINARY DESCRIPTION The THM321020S is a 1,048,576 words by 32 bits dynamic RAM module which assembled 8 pcs of TC514400J on the printed circuit board. The THM321020S can be as well used as 2,097,152 words by
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THM321020S-80,
THM321020SG-80,
THM321020S
TC514400J
THM321020
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA i u in iu M CIRCUIT TECHNICAL n ro ru u u iu iim l un i cvjrv/A i cu v .it \ \ _ u ii THM328020BS/BSG-50.J0.J0 DATA TENTATIVE DATA 8,388,608 WORDS x 32 BIT DYNAMIC RAM MODULE d e s c rip tio n m The THM328020ES/BSG is a 4,194,404 Words by 32 bits dynai :c RAM module wtucn assemoied 16
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THM328020BS/BSG-50
THM328020ES/BSG
TC5117400BSJ
THM328020BS--
THM328020BS/BSG
THM328020BS
1994-07-06----------T
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jeida dram 88 pin
Abstract: No abstract text available
Text: M I lt^ P n N M T8D88C132 1 MEG x 32, 2 MEG x 16 IC D R AM C AR D IC DRAM CARD 4 MEGABYTES 1 MEG x 32, 2 MEG x 16 PIN ASSIG N M EN T End View 88-Pin Card (U-1) MARKING • Timing 60ns access 70ns access 80ns access PIN * SYMBOL PIN# Vss 31 NC 61 2 DQ0 32
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T8D88C132
88-pin
128ms
jeida dram 88 pin
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Untitled
Abstract: No abstract text available
Text: [M IC R O N 1 MEG □RAM . _ MODULE W W MT10D140 40 DRAM MODULE 1 MEG x 40 DRAM _ _ ^ •■I w X FAST PAGE MODE MT10D140 lo w p o w e r, FEXTENDED Y T F N in P n RREFRESH F (MT10D140 L) L .I— FEATURES PIN ASSIGNMENT (Top View) 72-pin single-in-line package
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MT10D140
MT10D140)
72-pin
024-cycle
128ms
MT100140
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jeida dram 88 pin
Abstract: 88 pins dram card
Text: ADVANCE M IP P r iM I i i ^ n u i >» M T16D 88C 232V 2 MEG x 32, 4 MEG x 16 IC DRAM CARD 1C DRAM CARD 8 MEGABYTES 2 MEG x 32, 4 MEG x 16 FEATURES PIN ASSIGNMENT End View 88-Pin Card (DF-3) OPTIONS MARKING • Timing 70ns access 80ns access 100ns access
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88-pin
128ms
MT16D88C232V
jeida dram 88 pin
88 pins dram card
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Untitled
Abstract: No abstract text available
Text: jÉM n ÉÉL AK2321024W 1,048,576 by 32 Bit Flash Memory KICBOGUCÏÏITCOBPOBAION DESCRIPTION The Accutek AK2321024W flash memory module is a CMOS Flash Memory organized in 1024K x 32 bit words. The module consists of four standard 1 Meg x 8 flash memory components in plastic TSOP
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AK2321024W
1024K
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Untitled
Abstract: No abstract text available
Text: AK632256WI AK632256Z 262,144 x 32 Bit CMOS/BiCMOS Static Random Access Memory MICROCIRCUIT CORPORATION DESCRIPTION Front View 64-Pin SIM T h e A c c u te k A K 6 3 2 2 5 6 S R A M M o d u le c o n s is ts o f e ig h t fa s t h ig h p e rfo r m a n c e S R A M s m o u n te d o n a lo w p ro file , 6 4 p in S IM o r Z IP
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AK632256Z-15
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