ORIGIN SEMICONDUCTOR DIODE Search Results

military part marking symbols jan

Abstract: jan1n538 1n538 JAN1N540 1N538 JAN JAN-1N540M 1N538M in547 JAN-1N538 JAN-1N547M
Contextual Info: MIL SPECS iclooooias 0002300 L> f MIL-S-19500/2021 AMOEDMOrr 2 14 December 1964 supebsedS g D C K »T 1 3 December 1963 MILITARY SPECIFICATl« SEMICONDUCTOR DEVICES, DIODES, SILICCB, POWER BECTLFTEBS, TYPES JAN-1 N538, JAN-1#540 AMD JAI-1*547 This amendment forms a part of Military Specification MIL-S-19500/2C2A,

1N830A

Abstract: mil-s-19500
Contextual Info: M I L - S - 19500/229 NAVY AMENDMENT 1 25 April 1966 MILITARY SPECIFICATION SEMI CONDUCTOR DEVICE, DIODE, TYPE 1N830AM This amendment forms a part of Military Specification'MIL-S-19500/229(NAVY), 29 June 1962. Page 1, Title: Delete and substitute: "SEMICONDUCTOR DEVICE, DIODE, TYPE 1N830A".

DC100V

Abstract: DC250V diac data sheet DIAC EQUIVALENT circuit diac marking IC speaker protect SPD102 TV 20-30 SPD-102L SPD-141M
Contextual Info: SURGE PROTECT DIODES SPD -SERIES I.PART NUMBER SPD-301 N 1 (2) (3) (1)Series name (2)DC Sparkover voltage The first two digits are significant and the third is the number of zeros. Units in volts(v). (3)Tolerance of DC Sparkover voltage Mark L M N Tolerance ±10%

infrared transmitter and receiver

Abstract: MCF51EM electrical based microcontroller projects mcf51je256 S08 Freescale AN4116 MC9S08MM128 MCF51EM256 MCF51MM256 instrumentation projects
Contextual Info: Freescale Semiconductor Application Note Document Number: AN4116 Rev. 0, 07/2010 Using MM/JE Flexis Families for Infrared Communication by: Carlos Casillas RTAC Americas Guadalajara, Mexico 1 Introduction This application note explains the hardware that facilitates the infrared communication implementation

FS1J3

Abstract: origin diode Schottky Diode 30V 1A SOD123 toshiba battery charger Power DIODES, toshiba Nihon EP10QY03 d1651 B130LAW toshiba smd diode toshiba diode 1A
Contextual Info: New Product Announcement August 2002 Compact, High-efficiency SOD-123: B130LAW! Uses 35-40% Less Board Space Than Other 1 Amp SMD’s E D SOD-123 A B G H C J Dim Min Max A 3.55 3.85 B 2.55 2.85 C 1.40 1.70 D  1.35 E 0.55 Typical G  0.25 H 0.15 Typical

ABVZ

Abstract: 1N1742 1N1742A 20C6
Contextual Info: MIL-S-19500/298 21 Ocmbor 1964 ● MILITARY SEMICONDUCTOR SPECIFICATION DEVfCE, TYPE 1. USAF DIODE, SILICON 1N1742A SCOPE 1.1 Oescri Ion. This specification covers voltxe-re + erence &ode, and is in accordance ehalf not be used for new design. 1.2 Madmum

"Power Semiconductor Applications" Philips

Contextual Info: Philips Semiconductors Power Diodes Back diffused rectifier diodes A single-diffused P-N diode with a two layer structure cannot combine a high forward current density with a high reverse blocking voltage. A way out of this dilemma is provided by the three layer

Contextual Info: DISCRETE SEMICONDUCTORS Ratings and Characteristics Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Ratings and Characteristics process to minimise forward voltage losses, and being majority carrier devices have no stored charge. They are therefore capable of operating at extremely high speeds.

YA878C15

Contextual Info: http://www.fujisemi.com YA878C15R 150V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA878C15 YA878C15

diode 100v 10a

Contextual Info: http://www.fujisemi.com YG872C10R 100V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F Applications

Contextual Info: http://www.fujisemi.com YA872C15R 150V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA872C15 YA872C15

YA872C10R

Abstract: diode 100v 10a
Contextual Info: http://www.fujisemi.com YA872C10R 100V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA872C10 YA872C10

Catalog diode

Abstract: YG875C10
Contextual Info: http://www.fujisemi.com YG875C10R 100V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG875C10 YG875C10

YG878C10

Contextual Info: http://www.fujisemi.com YG878C10R 100V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG878C10 YG878C10

Contextual Info: http://www.fujisemi.com YA872C12R 120V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA872C12 YA872C12

YA872C20R

Abstract: YA872C20 fuji
Contextual Info: http://www.fujisemi.com YA872C20R 200V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA872C20 YA872C20

ORIGIN ELECTRIC CATALOG

Abstract: YA878C20R Catalog diode diode Catalog diode 200v 30a PUT catalog 200v 30A schottky fuji electric mark
Contextual Info: http://www.fujisemi.com YA878C20R 200V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA878C20 YA878C20

YG875C15R

Contextual Info: http://www.fujisemi.com YG875C15R 150V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG875C15 YG875C15

Contextual Info: http://www.fujisemi.com YA875C15R 150V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA875C15 YA875C15

Contextual Info: http://www.fujisemi.com YG878C12R 120V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG878C12 YG878C12

Catalog diode

Contextual Info: http://www.fujisemi.com YA875C20R 200V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA875C20 YA875C20

YG875C20R

Abstract: YG875C20
Contextual Info: http://www.fujisemi.com YG875C20R 200V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG875C20 YG875C20

fuji

Contextual Info: http://www.fujisemi.com YA878C10R 100V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA878C10 YA878C10

fuji diode

Abstract: YG878C20 YG878C20R FUJI ELECTRIC DIODE Catalog diode 200V30A origin semiconductor diode catalog fuji
Contextual Info: http://www.fujisemi.com YG878C20R 200V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG878C20 YG878C20