OS 1400 NR Search Results

MN1405

Abstract: MN1435 MN1499 mn1400 MN1404 MN1402 MN1496 MN1403 N1405 vmos
Contextual Info: W ? D D > £ :i~ 9 MN1400*> lì —X MN1400 - X •1 t'* y h • 1 •?L*y7rV 'f ■ ¥ ' D e s c r i p t io n M S 1400 ✓ • > - * « . 4 e r f - l. — ^ / M N H O O S e r i e s 4 - B i t 1 C hip M icrocom puters *>*. • » A L U . R A N . I/O f O 1 .-1 6 A M irro-

wiring diagram dol motor starter

Abstract: 3 phase motor soft starter circuit diagram, ABB dol starter autotransformer starter 1TGC 901007 C0201 INSUM Technical Information M2BA315SMC wiring diagram ABB motor starter star delta timer starter diagram star delta starter km insum
Contextual Info: Protect IT – MNS Motor Management INSUM MCU Parameter Description Version 2.1 ABB INSUM MCU Parameter Description Software revision 2.1 ® INSUM MCU Parameter Description Software Version 2.1 1 1TGC 901025 M0201 Edition December 2001 ® INSUM MCU Parameter Description

IG 2200 19

Abstract: MMR100C H5C1
Contextual Info: Sun Type Dot Matrix 18mm <0.7" 5x7 Dot Matrix 37mm 1.4") 5x8 E m ittin g C o lo r Part N um ber Dot Matrix Displays E m ittin g Material W ave Length (nrn) Lum inous Intensity IF=10mA (ucd) Min. Max. Figure No. C olum n | MHR18A 1 MHR18C Red GaP 700 360

1N5327

Abstract: 1N532 n 340 ad LT 83 ZENER 1N5j
Contextual Info: 1N6309 thru 1N6355 Microsemi Corp. SA S T A A S A , C A J-'or more information cali 7 ]4 | 9 7 9 -X 2 2 0 500 mW Glass Zener Diodes FEATURES • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE • MICROMINIATURE PACKAGE • TRIPLE LAYER PASSIVATION • NIETALLURGICALLY BONDED (ABOVE 6.2 VOLTS

470NR-14D

Abstract: OS 430 NR - 14d, VARISTOR OS 430 NR, VARISTOR 470NR 470NR-10D 430NR-14D 120NR-10D 240NR-14D 390NR-10D 270NR
Contextual Info: ZR・NR series Radial Type ZR・NR Series Radial type Disk type general use ZR type (Low voltage) and NR type (Medium/High Voltage) are for protection of electronics and control eqiupments from surge and noise. 1. Features ・Superior nonlineality of voltage to maintain low limiting voltage.

470NR-14D

Abstract: OS 430 NR - 14d, VARISTOR 470NR 470NR-10D OS 470 VARISTOR OS 430 NR, VARISTOR 240NR-14D 390NR-10D 22ZR-10D 330NR-10D
Contextual Info: ZR䊶NR series Radial Type ZR䊶NR Series Radial type Disk type general use ZR type (Low voltage) and NR type (Medium/High Voltage) are for protection of electronics and control eqiupments from surge and noise. 1. Features 䊶Superior nonlineality of voltage to maintain low limiting voltage.

104MT

Abstract: 104MT160KBS90 54MT 94MT
Contextual Info: Bulletin 127504 OS/97 International IO R Rectifier MT.KB SERIES THREE PHASE AC SWITCH Power Modules Features Package -fully com patible w ith the industry standard INT-A-pak pow er m odules series High therm al conductivity package, electrically insulated case

Contextual Info: T E ELECTRONICS INC ^ r i ^ S ^ b M 3 Ì 5 s T o a D S T Ó 5 ^ 1 • N TE M È M S LiilS. Includes Peripherals NM OS, 8 Bit 40-Lead DIP, See Dlag. 299 Microprocessor (MPU), 1MHz !JjJ R E S E T VSS I NM OS, 8 Bit 40-Lead DIP, See Diag. 299 Microprocessor (MPU)

earth leakage circuit

Abstract: earth leakage diagram CURRENT TRANSFORMER Earth leakage SL7101
Contextual Info: SL7101 EARTH LEAKAGE CURRENT DETECTOR Description The SL7101 is designed for use in earth leakage circuit interrupters for operation directly of the AC Line in breakers. It contains pre regulator, main regulator, after regulator, differential amplifier, level comparator, latch circuit. The input in

TDA 0470

Abstract: 2SK2760-01
Contextual Info: FUJI 2SK2760-01 N-channel MOS-FET FAP-IIS Series 60 0V > Features - 1 ,2 ft 9A 60 W > Outline Drawing TO-3 PF High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 55

IRFS641

Abstract: IRFS640
Contextual Info: N-CHANNEL POWER MOSFETS IRFS640/641 FEATURES TO-220F • Lower R d s io n •Improved inductive ruggedness • Past switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

13612OR

Abstract: 13612OR-S02 Inphi NRZ 13612OR-S02QFN
Contextual Info: 13612OR 13 Gbps OR/NOR/AND/NAND Data Sheet Inphi 13612OR Applications • • • • • High-speed up to 13 GHz digital logic High-speed (up to 13 Gbps) serial data transmission systems Broadband test and measurement equipment NRZ-to-RZ/RH conversion Differential encoding for optical DPSK and duobinary transmitter modules

13612OR-S02

Abstract: 13613ORS02QFN inphi 13613OR-S02QFN Inphi NRZ optical duobinary 13612
Contextual Info: 13613OR 13 Gbps OR/NOR/AND/NAND Data Sheet Inphi 13613OR Applications • • • • • High-speed up to 13 GHz digital logic High-speed (up to 13 Gbps) serial data transmission systems Broadband test and measurement equipment NRZ-to-RZ/RH conversion Differential encoding for optical DPSK and duobinary transmitter modules

Contextual Info: ICI •ft* Comlinear Corporation Preliminary Low-gain Op Amp with Disable CLC430 APPLICATIONS: FEATURES typical : • video distribution • multiple line driver • analog bus driver • video signal multiplexing • DAC output buffer •CCD amplifier • 55MHz small signal bandwidth (4Vpp)

IRFS640

Abstract: irfs641
Contextual Info: N-CHANNEL POWER MOSFETS IRFS640/641 FEATURES • L o w e r R d s io n • Improved inductive ruggedness • Fast sw itching tim es • Rugged polysilicon gate cell structure • Lower input ca p acita nce • Extended safe operating area • Improved high tem perature reliability

ITLSI

Abstract: I03y
Contextual Info: This material and III« Information herein It the property of Fup Electric Co .lid They shell be neither reproduced. copied, lent, or disclosed in any woy whatsoever or lha use ol any third pany.nor used lor ihe manufacturing purposes w ith o u t the express written consent oi Fuji Electric Co. Ltd.

TRANSISTOR SMD MARKING CODE n10

Abstract: transistor N14 172 smd transistor marking P7 TSA5523M
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TSA5523M 1.4 GHz I2C-bus controlled multimedia synthesizer Product specification File under Integrated Circuits, IC02 1996 Dec 17 Philips Semiconductors Product specification 1.4 GHz I2C-bus controlled multimedia synthesizer

Contextual Info: IMAGE SENSOR CCD area image sensor S9737 series 1024 x 1024 pixels, front-illuminated FFT-CCDs S9737 series is a family of FFT-CCD area image sensors specifically designed for low-light-level detection in scientific applications. S9737 series also features low noise and low dark current MPP mode operation . These enable low-light-level detection and long integration time, thus

Contextual Info: PREVIOUS DATA IMAGE SENSOR CCD area image sensor S9736 series 512 x 512 pixels, front-illuminated FFT-CCDs S9736 series is a family of FFT-CCD area image sensors specifically designed for low-light-level detection in scientific applications. S9736 series

Contextual Info: IMAGE SENSOR CCD area image sensor S9736 series 512 x 512 pixels, front-illuminated FFT-CCDs S9736 series is a family of FFT-CCD area image sensors specifically designed for low-light-level detection in scientific applications. S9736 series also features low noise and low dark current MPP mode operation . These enable low-light-level detection and long integration time, thus

2sk790

Abstract: 2SK79
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSII 2SK790 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • Low Drain-Source ON Resistance : • High Forward Transfer Admittance:

tn0201t

Abstract: 38212 3-8212
Contextual Info: Tem ic TN0201T N-Channel Enhancement-Mode MOS Transistor Product Summary rDS<on M ax Q) V(br )dss M in (V) 1.0@ V GS = 10 V 20 1.4 @ VGS = 4.5 V VgS(Ui) (V) I d (A) 1.0 to 3.0 0.3 Features Benefits Applications

Contextual Info: N T E ELE C T R O nT cT T Ñ T 5SE D ^ 3 1 5 5 ^ 0002075 b24 M N T E fflT S W T T L = TRANSISTOR TRANSISTOR LOGIC 4-Blt Binary Full Adder "/Fast Carry 16-Lead DIP, See Dlag. 249 4-Bit Magnitude Comparator 16-LeadDIP,SeeDiag.249 B3 Data Input Data Input A3

APT7530CFN

Abstract: APT8030CFN
Contextual Info: A D VA NC E D POWER TECHNOLOGY 4SE □2S7TD1 D ODDOSTb 3DS *A V P ADVANCED OD P o w e r Tec h n o lo g y a APT8030CFN 800V 29.0A 0.30f# APT7530CFN 750V 29.0A 0.30 Q Os POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEFS MAXIMUM RATINGS