OSRAM IR EMITTER IRL Search Results

Contextual Info: 2014-01-14 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.1 LPT 80 A Features: Besondere Merkmale: • Spectral range of sensitivity: typ 450 . 1100 nm • Package: Sidelooker, Epoxy • Special: High photosensitivity • Same package as IR emitter IRL 80 A, IRL 81 A

OSRAM IR emitter IRL

Abstract: IRL81A
Contextual Info: GaAlAs-Infrarot-Sendediode GaAlAs-Infrared Emitter Lead Pb Free Product - RoHS Compliant IRL 81 A Wesentliche Merkmale Features • GaAIAs-Lumineszenzdiode im nahen Infrarotbereich • Rosa Kunststoff-Miniaturgehäuse, seitliche Abstrahlung • Preisgünstig

ILD615

Abstract: ILQ615 DET-200
Contextual Info: ILD615 QUAD CHANNEL ILQ615 DUAL CHANNEL Phototransistor Optocoupler FEATURES • Identical Channel to Channel Footprint • Current Transfer Ratio CTR Range, IF=10 mA ILD/Q615-1: 40–80% Min. ILD/Q615-2: 63–125% Min. ILD/Q615-3: 100–200% Min. ILD/Q615-4: 160–320% Min.

triac driver opto

Abstract: SCR opto DRIVER optocoupler triac infineon opto triac .5 A OPTO TRIAC il4218 opto scr
Contextual Info: IL4216 700 V IL4217 800 V IL4218 600 V Triac Optocoupler FEATURES • High Input Sensitivity IFT=1.3 mA • 600/700/800 V Blocking Voltage • 300 mA On-State Current • High Static dv/dt 10,000 V/µsec., typical • Inverse Parallel SCRs Provide Commutating

linear opto coupler

Abstract: DL207 DAA2000 DM207 IL388DAA opto phase detector OSRAM OPTO SEMICONDUCTORS GMBH HIGH VOLTAGE OPTO COUPLER
Contextual Info: IL388DAA High Performance Linear Optocoupler for Optical DAA in Telecommunications Part of the DAA2000 Kit FEATURES • 2.3 mm High SMT Package • High Sensitivity K1 at Low Operating LED Current • Couples AC and DC Signals • Low Input-Output Capacitance

OSRAM IR emitter IRL

Abstract: GEOY6391 OHFD1422 Q68000-A7852
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor LPT 80 A Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 470 nm bis 1080 nm • Sidelooker im Kunststoffgehäuse • Hohe Empfindlichkeit • Passend zu IRED IRL 80 A, IRL 81 A

IL420

Abstract: opto fet IL4208 opto triac 800VDRM opto 101
Contextual Info: IL420 800 V IL4208 600 V Triac Optocoupler FEATURES • High Input Sensitivity IFT=2.0 mA • 600/800 V Blocking Voltage • 300 mA On-State Current • High Static dv/dt 10 kV/µs • Inverse Parallel SCRs Provide Commutating dv/dt >10 kV/µs • Very Low Leakage <10 µA

IEC 62471 osram

Abstract: IEC-61760-1 LPT 80a
Contextual Info: 2013-01-31 GaAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.0 IRL 80 A Features: Besondere Merkmale: • GaAs infrared emitting diode • Clear plastic package with lateral emmision • • • • • GaAs-Lumineszenzdiode im Infrarotbereich • Klares Miniaturkunststoffgehäuse, seitliche

OHLY0598

Contextual Info: GaAlAs-Infrarot-Sendediode GaAlAs-Infrared Emitter Lead Pb Free Product - RoHS Compliant IRL 81 A Wesentliche Merkmale Features • GaAIAs-Lumineszenzdiode im nahen Infrarotbereich • Rosa Kunststoff-Miniaturgehäuse, seitliche Abstrahlung • Preisgünstig

INVERSE PARALLEL SCR opto DRIVE CIRCUIT

Abstract: triac driver opto snubber capacitor applications triac opto coupler
Contextual Info: IL4116 700 V IL4117 800 V IL4118 600 V Zero Voltage Crossing Triac Optocoupler FEATURES • High Input Sensitivity: IFT=1.3 mA, PF=1.0; IFT=3.5 mA, Typical PF < 1.0 • Zero Voltage Crossing • 600/700/800 V Blocking Voltage • 300 mA On-State Current • High Static dv/dt 10,000 V/µsec., typical

0945 opto

Abstract: IL350 IL351 IL358 IL359 photovoltaic opto
Contextual Info: IL350/351/358/359 High Performance Linear Optocoupler for Optical DAA in Telecommunications FEATURES • 2.0 mm High SMT Package • High Sensitivity K1 at Low Operating LED Current • Couples AC and DC Signals • Low Input-Output Capacitance • Isolation Voltage, 3000 VRMS

optocoupler H

Abstract: HIGH VOLTAGE OPTO COUPLER 8C27
Contextual Info: IL388 High Performance Linear Optocoupler for Optical DAA in Telecommunications FEATURES • 2.3 mm High SMT Package • High Sensitivity K1 at Low Operating LED Current • Couples AC and DC Signals • Low Input-Output Capacitance • Isolation Voltage, 2500 VDC, 1 second

GEOY6461

Abstract: OHLY0598
Contextual Info: GaAlAs-Infrarot-Sendediode GaAlAs-Infrared Emitter Lead Pb Free Product - RoHS Compliant IRL 81 A Wesentliche Merkmale Features • GaAIAs-Lumineszenzdiode im nahen Infrarotbereich • Rosa Kunststoff-Miniaturgehäuse, seitliche Abstrahlung • Preisgünstig

Contextual Info: GaAlAs-Infrarot-Sendediode GaAlAs-Infrared Emitter Lead Pb Free Product - RoHS Compliant IRL 81 A Wesentliche Merkmale Features • GaAIAs-Lumineszenzdiode im nahen Infrarotbereich • Rosa Kunststoff-Miniaturgehäuse, seitliche Abstrahlung • Preisgünstig

Contextual Info: 2013-08-01 GaAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.1 IRL 80 A Features: Besondere Merkmale: • GaAs infrared emitting diode • Clear plastic package with lateral emmision • GaAs-Lumineszenzdiode im Infrarotbereich • Klares Miniaturkunststoffgehäuse, seitliche

mosfet 4108

Abstract: INVERSE PARALLEL SCR opto DRIVE CIRCUIT
Contextual Info: IL410 800 V IL4108 600 V Zero Voltage Crossing Detector Triac Optocoupler FEATURES • High Input Sensitivity IFT=2.0 mA, PF=1.0 IFT=5.0 mA, PF≤1.0 • 300 mA On-State Current • Zero Voltage Crossing Detector • 600/800 V Blocking Voltage • High Static dv/dt 10 kV/µs

OHF04132

Abstract: MA103 OS-PCN-2011-003-A2
Contextual Info: 2012-11-15 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.0 / acc. to: OS-PCN-2011-003-A2 IRL 81 A Features: Besondere Merkmale: • High Power Infrared LED • Pink plastic package with lateral emission

SFH4235

Abstract: OHF04187
Contextual Info: 2013-01-15 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.0 SFH 4235 Features: Besondere Merkmale: • • • • • IR lightsource with high efficiency Double Stack emitter Low thermal resistance (Max. 9 K/W)

Contextual Info: 2013-10-24 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 SFH 4235 Features: Besondere Merkmale: • • • • • IR lightsource with high efficiency Double Stack emitter Low thermal resistance (Max. 9 K/W)

Contextual Info: 2012-11-26 OSLON Black Series 940 nm Draft Version α.0 SFH 4725S Features: Besondere Merkmale: • • • • • IR lightsource with high efficiency Double Stack emitter Low thermal resistance (Max. 11 K/W) Centroid wavelength 940 nm ESD safe up to 2 kV acc. to ANSI/ESDA/JEDEC

OHF04132

Abstract: IEC 62471 osram OS-PCN-2011-003-A IEC 61760-1
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant IRL 81 A gemäß OS-PCN-2011-003-A acc. to OS-PCN-2011-003-A Wesentliche Merkmale Features • Infrarot LED mit hoher Ausgangsleistung

Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant IRL 81 A according to OS-PCN-2011-003-A Wesentliche Merkmale Features • Infrarot LED mit hoher Ausgangsleistung • Rosa Kunststoff-Miniaturgehäuse, seitliche

Contextual Info: 2013-08-08 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.2 SFH 4250S Features: Besondere Merkmale: • Double Stack emitter • High Power Infrared LED • Short switching times • 2- fach Stack Emitter

Contextual Info: 2013-12-16 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.3 SFH 4250S Features: Besondere Merkmale: • Double Stack emitter • High Power Infrared LED • Short switching times • 2- fach Stack Emitter