P 150 54 Search Results

2N2243

Abstract: H21E 2N3439 pnp case to-39
Contextual Info: CB 7 (CB 6) S ilicon N P N transistors, general purpose T g m b -2 5 T ra n s is to rs N P N s ilic iu m , usage g én é ra ! v CEO (V) Case h 2 iE fT (MHz} *s (ns) •c v CEsat (V) <mA) max 60 150 1,5 150/15 40 61 120 150 1,5 150/15 50 61 20 60 150 5 150/15

varistor SKVA 20 B 550

Abstract: semikron skvc 20 a 130
Contextual Info: s e MIKRDn 14.6 Metaloxide ZnO Varistors Types Vv V dc V DC + 10% max. max. (b e = 1 mA) T 1)2) 'p ip 1»3 » Wp1>3> P av max. max. max. max repetitive nonrepetitive A Tamb - 150 4500 24,6 0,6 150 4500 30,1 0,6 200 6500 79,3 1,0 150 4500 64,5 0,6 420 150

Contextual Info: t e f l o n * in s u l a t e d t e r m in a l s CONCORD r r - i4 R G H • » B mm m * L p T : N -— - L l pJ I A { « -C - ^ -F — F IG 480 P A R T NO. A B C N P 1112-02 1112-05 1112-06 1112-07 1112-08 .125 .150 .150 .150 .150 .093 .125 .125 .125 .125 .050

MAX4310

Abstract: MAX4310ESA MAX4313 MAX4313ESA MAX4313EVKIT TAJB106M010
Contextual Info: 19-1379; Rev 0; 7/98 MAX4313 Evaluation Kit Features ♦ Single-Supply Operation ♦ 150MHz -3dB Bandwidth RL = 150Ω ♦ 540V/µs Slew Rate (RL = 150Ω) ♦ 40MHz 0.1dB Gain Flatness (RL = 150Ω) ♦ Low Switching Transient (20mVp-p) ♦ 0.06%/0.02° Gain/Phase Errors

Contextual Info: Component General Inc. P/N: CBR-150-4 P/N: CBR-150-4 Stripline Base Mounted Resistors Part Dimensions Electrical Specifications Mechanical Specifications Resistance Value: Covers: 10 - 1000 Ω or as required. Other values available upon request. Alumina Ceramic.

Contextual Info: P/N 200-150-100-35-A3 AMPLIFIER MODULE Small Size High Efficiency Low Even Order Harmonics Rugged 150 - 200 MHz 100 Watts Gain: 35 dB Voltage: 24 VDC PERFORMANCE PARAMETER SPECIFICATIONS COMMENTS RF Output Power 100 Watts cw minimum Frequency Range 150 - 200 MHz

Contextual Info: Component General Inc. P/N: CBT-150 P/N: CBT-150 Stripline Base Mounted Terminations Part Dimensions Mechanical Specifications Covers: Alumina Ceramic. Substrate: Beryllium Oxide Ceramic. Contact: Beryllium Copper, Gold Plated per MIL-G-45204. Length: 0.125" Min., Width: 0.120", Thickness 0.004" ± 0.002".

J2N4393

Abstract: J2N4416 IC 4093 J-2N4393 2N 2222 J2N4222 J-2N4093 J-2N4416 J2N4392 J2N2222A
Contextual Info: chips/pastilles y signal transistors transistors de signal THOMSON-CSF P Types v CEO 1*21 E NPN PNP Dimensions mA (mm) (W) (V) J-2N 2906 0,5 0,4 30 40 40 40 120 120 150 150 0,45 0,45 0,5 0,4 40 60 40 40 120 120 150 150 0,45 0,45 X J-2N 2906 A 0,5 0,4 30

Contextual Info: Mkmsemj Zener Regulator Diodes : P a rt N u m b e r M ic r o s e m i . D iv is io n P ackag e O u tlin e Type ' ’’ . Mil Spec D a ta , P o w e r S h e e t ID W Vz (V) Izt (m A ) 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 150 150 150

BL-BEE574

Abstract: BL-BYY171 BL-BEE571 BL-BGG171 BLBYY171
Contextual Info: L DUAL-CHIP LED LAMPS Chip P art No. Emitted Color B right Red BL-BEG271 1n T -l 1.0"Lead Standard 3 2£ 6.0 45 100 30 150 22 U 30Ji 45 Hi-Eff Red 635 45 100 30 150 2.0 2.6 25a 45 Green 568 30 100 30 150 22 2J& 30.0 45 Yellow 585 35 100 30 150 2.1 2.6 20j0

Contextual Info: Terminations & Loads Model 1439 High Power Coaxial Termination dc to 2.5 GHz 150 Watts Type N Connector E MAXIMUM SWR*: X P R E S S www.sicklesonline.com 800-542-4457 o SWR dc - 2.5 1.20 POWER RATING: 150 watts average mounted horizontally or vertically assuming unobstructed air flow and

FMS3810

Abstract: FMS3815 FMS9884A Sync on Green D 15
Contextual Info: www.fairchildsemi.com FMS3810/3815 Triple Video D/A Converters 3 x 8 bit, 150 Ms/s Features Description • 8-bit resolution • 150 megapixels per second – 0.2% linearity error • Sync and blank controls • 1.0V p-p video into 37.5Ω or 75Ω load • Internal bandgap voltage reference

fms3815

Abstract: fairchild 3815
Contextual Info: www.fairchildsemi.com FMS3810/3815 Triple Video D/A Converters 3 x 8 bit, 150 Ms/s Features Description • 8-bit resolution • 150 megapixels per second – 0.2% linearity error • Sync and blank controls • 1.0V p-p video into 37.5Ω or 75Ω load • Internal bandgap voltage reference

RD13M

Abstract: RD2.4M 1SS53 zener rd9.1eb
Contextual Info: N E C ELECTRONICS INC E Diodes S=IC D ~'r 9m •ÈÜ t>427555 O D D b l D E VR V 30 50 75 30 50 75 lo (mA) 100 200 200 100 100 100 VR(V) '30 50 30 50 I f (mA) 150 (100) 150 (100) 150 (100) 150 (100) P = 0.4W Common Anode Common Cathode Common • Zener Diodes (Mini-Mold Type)

Contextual Info: 5920VL 150 X Ø172 X 50L NMBTC.COM / 818.341.3355 Characteristic Curves General Speciications Motor Protection: Auto Restart/Polarity Protection P-Q Curve In H2O (Pa) Insulation Resistance: 1.00 250 25000 0.80 200 20000 0.60 150 15000 0.40 100 10000 0.20

Contextual Info: 150 WATTJW SERIES FEATURES While others pack o n ly 5 0 watts in to a 2 .4 0 " Higher power density 54.8 W/in3 L x 2 .2 8 " W x 0 .5 0 " H package, A T & T B e ll Laboratories desig n ers p ack 150 watts 2:1 in p u t v o lta g e , 5 1/ o u tp u t . These h ig h ly

mx231024

Contextual Info: M A C R N I MACRONIX INC X P R D .U staaaaa 34E D C T oqoooom L I N E; a PROGRAMMABLE MEMORY: ROMS |PRODUCT D E S C R IP T IO N a v ^ S P K K ! i^ P K G T Y P K ¿ ^ A V A IL A B IL IT Y MX2316B 16KROM 150 ns 24 Pin Dip K Ia MX2332/33 32K ROM 150 ns 24 Pin Dip

Contextual Info: PS654 60-150 MHz. 1 BIT Digital Attenuator M/C/?Omve Co/p. Maximum Ratings Operating tem perature. -54°C to +85°C Storage temperature.-62°C to +125°C DC voltage . +5.5 volts RF input p o w e r

BF-139

Abstract: bf139 transistors BC 549 transistors TO-92 case bc bc 540 BC211 8C547 J BC211 CL16F CTO-92
Contextual Info: S ilic o n N P N transistors, general purpose continued Tam b- 25 °C Transistors N P N silicium , usage généra! (suite) tS v CEO (V) h2 ie (V) ic / 'b max ImA) max ImA) min 40 250 150 1 1000/100 300 § 341 40 250 150 1 1000/100 300 § 341 45 110 240 2

RS436

Contextual Info: RADIALif IMI PRELIMINARY TECHNICAL DATA SHEET Fibre Qptio Conponents Title F 797 384 01X SMA /SM A 50/ 12 5 DUPL EX PATCHCORD. Dimensions Series P at ch co rd : mm Issue : J a n . 14 02 Page 1/1 54 mm max 10 max 150 maxi 150 maxi Leng th L sea table be low

IXTH48P20P

Abstract: IXTT48P20P
Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTH48P20P IXTT48P20P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated G Test Conditions VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200 V VGSS Continuous ±20

Contextual Info: SURFACE MOUNT-CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150-2000 MHz FEATURES • P C S Frequency Coverage: 150-2000 MHz • Balanced 4 Diode it Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low V S W R and Flat Attenuation Characteristics

P-Channel MOSFET 600v

Abstract: NF925 32P60P B9 881
Contextual Info: IXTN32P60P PolarPTM Power MOSFET VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 600V - 32A Ω 350mΩ miniBLOC, SOT-227 E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings - 600 VDGR TJ = 25°C to 150°C, RGS = 1MΩ

ISOPLUS247

Contextual Info: IXTR90P10P PolarPTM Power MOSFET VDSS = ID25 = RDS on ≤ - 100V - 57A Ω 27mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ