P CHANNEL 600V IGBT Search Results

P CHANNEL 600V IGBT Result Highlights (5)

Part	Manufacturer	Description
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
GT50J123	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)
GT20J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, TO-220SIS
GT30J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)
GT30J122A	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)

P CHANNEL 600V IGBT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: HGTA32N60E2 ¡3 H " « » 32A, 600V N-Channel IGBT A p r il 1 9 9 5 Package Features • 32A.600V JEDEC MQ-093AA 5 LEAD TO-218 • Latch Free Operation • Typical Fall Time 620ns • High Input Impedance • Low Conduction Loss Description The I G B T is a M O S	OCR Scan	HGTA32N60E2 MQ-093AA O-218) 620ns	PDF
24N60D1D Abstract: 24N60D 24n60d1 620 tg diode Contextual Info: f f l M A R R f â H G T G 2 N 4 6 D D 1 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode A p rii 19 9 5 Features Package JEDEC STYLE TO-247 • 24A .600V EMITTER • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode	OCR Scan	O-247 500ns 24N60D1D 24N60D 24n60d1 620 tg diode	PDF
NF925 Abstract: ISOPLUS247 Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTR32P60P VDSS ID25 RDS on = = ≤ - 600V - 18A Ω 385mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600	Original	IXTR32P60P ISOPLUS247 E153432 100ms 32P60P NF925 ISOPLUS247	PDF
ISOPLUS247 Abstract: 16P60P Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTR16P60P VDSS ID25 RDS on = - 600V = - 10A ≤ 790mΩ Ω P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600	Original	IXTR16P60P ISOPLUS247 E153432 100ms, 16P60P ISOPLUS247 16P60P	PDF
Contextual Info: A D VA NC ED POIilER TECHNOLOGY b lE □257^0^ D DQDGÔ74 4i7 A V P A dvanced P o w er Te c h n o l o g y APT30GF60BN 600V 30A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol	OCR Scan	APT30GF60BN	PDF
IXTK32P60P Abstract: IXTX32P60P PLUS247 NF925 Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTK32P60P IXTX32P60P VDSS ID25 = = ≤ RDS on - 600V - 32A Ω 350mΩ P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V	Original	IXTK32P60P IXTX32P60P O-264 120/rating 100ms 32P60P IXTK32P60P IXTX32P60P PLUS247 NF925	PDF
Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTN32P60P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 600V - 32A Ω 350mΩ miniBLOC, SOT-227 (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings	Original	IXTN32P60P OT-227 E153432 2500ias 100ms 32P60P	PDF
Contextual Info: ADVANCED POÜIER TECHNOLOGY □ SSTIGT G000fl7fl 03S « A V P blE D A dvanced P o w er Te c h n o l o g y * APT45GF60BN 600V 45A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol V CES	OCR Scan	G000fl7fl APT45GF60BN	PDF
IR2110 application note Abstract: IR2113 APPLICATION NOTE circuit to ir2113 IR2113 ir2110 circuit DIAGRAM IR2113 APPLICATION mosfet 600V 10A logic level note application IR2113 ir2113s ir2110 application Contextual Info: Data Sheet No. PD60147-P IR2110/IR2113 S HIGH AND LOW SIDE DRIVER Features • • • • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune	Original	PD60147-P IR2110/IR2113 IR2110) IR2113) IR2110S/IR2113S IRFPE50) 14-Lead MS-001AC) 16-Lead IR2110 application note IR2113 APPLICATION NOTE circuit to ir2113 IR2113 ir2110 circuit DIAGRAM IR2113 APPLICATION mosfet 600V 10A logic level note application IR2113 ir2113s ir2110 application	PDF
IR2110 application note Abstract: IR2113 APPLICATION NOTE circuit to ir2113 ir2110 IR2113 APPLICATION IR2113 IR2110 design IRFBC20 IRFBC30 IRFBC40 Contextual Info: Data Sheet No. PD60147-P IR2110/IR2113 S HIGH AND LOW SIDE DRIVER Features • • • • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune	Original	PD60147-P IR2110/IR2113 IR2110) IR2113) IR2110S/IR2113S IRFPE50) 14-Lead MS-001AC) 16-Lead IR2110 application note IR2113 APPLICATION NOTE circuit to ir2113 ir2110 IR2113 APPLICATION IR2113 IR2110 design IRFBC20 IRFBC30 IRFBC40	PDF
Contextual Info: STGD6NC60H N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C <2.5V 7A ) s ( t c u d o ) r s ( P t c e Description t u e d l o o r s P b Internal schematic diagram e O t e l ) o s ( s t b c u O d	Original	STGD6NC60H	PDF
P-Channel MOSFET 600v Abstract: ISOPLUS247 nf 931 diode 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET Contextual Info: IXTR32P60P PolarPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 600V - 18A Ω 385mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 ( E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTR32P60P ISOPLUS247 E153432 100ms 32P60P 3-25-09-D P-Channel MOSFET 600v ISOPLUS247 nf 931 diode 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET	PDF
Contextual Info: PolarPTM Power MOSFET VDSS ID25 IXTR32P60P RDS on = = ≤ - 600V - 18A Ω 385mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 ( E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTR32P60P ISOPLUS247 E153432 100ms 32P60P 3-25-09-D	PDF
IR2131 Contextual Info: Data Sheet No. PD60032 rev P IR2131 J (S) & (PbF) Features 3 HIGH SIDE AND 3 LOW SIDE DRIVER • Floating channel designed for bootstrap operation • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune	Original	PD60032 IR2131 28-Lead 44-Lead IR2131 IR2131S	PDF

note application IR2131 Abstract: IR2131 IR2131S IR2131SPbF IR2131J IRF450 IRF820 IRF830 IRF840 IR2131 APPLICATION NOTE Contextual Info: Data Sheet No. PD60032 rev P IR2131 J (S) & (PbF) Features 3 HIGH SIDE AND 3 LOW SIDE DRIVER • Floating channel designed for bootstrap operation • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune	Original	PD60032 IR2131 28-Lead 44-Lead IR2131 IR2131S note application IR2131 IR2131S IR2131SPbF IR2131J IRF450 IRF820 IRF830 IRF840 IR2131 APPLICATION NOTE	PDF
Contextual Info: PolarPTM Power MOSFET VDSS ID25 IXTR16P60P RDS on = - 600V = - 10A ≤ Ω 790mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 600	Original	IXTR16P60P ISOPLUS247 E153432 100ms, 16P60P	PDF
IR2133 Abstract: ir2233j application IR2133J IR2233 PD60107-P Contextual Info: Data Sheet No. PD60107-P IR2133 5 (J&S) IR2233(5) (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune	Original	PD60107-P IR2133 IR2233 0V/12V IR2233J IRG4PH50KD) IR2133J IRG4ZH71KD) 28-Lead MS-011AB) ir2233j application PD60107-P	PDF
P-Channel MOSFET 600v Abstract: NF925 32P60P B9 881 Contextual Info: IXTN32P60P PolarPTM Power MOSFET VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 600V - 32A Ω 350mΩ miniBLOC, SOT-227 E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings - 600 VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTN32P60P OT-227 E153432 100ms 32P60P 5-09-A P-Channel MOSFET 600v NF925 B9 881	PDF
application note ir2233j Abstract: IR2133 application note IR2133 application notes ir2233j application Contextual Info: Data Sheet No. PD60107-P IR2133/IR2135 J&S IR2233/IR2235 (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune	Original	PD60107-P IR2133/IR2135 IR2233/IR2235 0V/12V IR2133IR2135/IR2233I1E IR2233J IRG4PH50KD) IR2133J IRG4ZH71KD) 28-Lead application note ir2233j IR2133 application note IR2133 application notes ir2233j application	PDF
APT35GL60BN Abstract: THYRISTOR 35A 300V Contextual Info: ADVANCED POWER TECHNOLOGY blE 0257^0*! D 0000Ô50 A T53 « A V P d v a n c e d P ow er Technology APT35GL60BN 600V 35A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	TECHN0L06Y APT35GL60BN THYRISTOR 35A 300V	PDF
Contextual Info: ADVANCED POWER TECHNOLOGY blE D Bi QSSTIQT 0000Ô56 244 B A V P • R A d v a n ced F M P o w er Te c h n o l o g y APT75GL60BN 600V 75A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS	OCR Scan	APT75GL60BN	PDF
Contextual Info: STGP7NB60HD STGP7NB60HDFP N-CHANNEL 7A - 600V - TO-220/FP PowerMESH IGBT TYPE STG P7NB60HD STG P7N B60H D FP V ces VcE sat lc 600 V 600 V < 2 .8 V < 2 .8 V 7 A 7 A . HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) . LOW O N -VO LTA G E DR O P (Vcesat) . . . . .	OCR Scan	STGP7NB60HD STGP7NB60HDFP O-220/FP P7NB60HD STGP7NB60HD/FP O-22QFP	PDF
STGB7NB60HD Contextual Info: STGB7NB60HD N-CHANNEL 7 A - 600V - DPAK PowerMESH IGBT TYPE S TG B7NB60HD V CES V c E s a t lc 600 V < 2.8 V 7 A . HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) . LOW O N -VO LTA G E DR O P (Vcesat) . . . . . LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION	OCR Scan	STGB7NB60HD B7NB60HD O-263) GC7B950 O-263 STGB7NB60HD	PDF
IR2109 application note Abstract: halfbridge design ir2109 IR21094 PD60163-P IR2109 IR21094S IR2109S MS-012AA IR21091 Contextual Info: Data Sheet No. PD60163-P IR2109 4 (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V	Original	PD60163-P IR2109 540ns IR21094) IR2109 application note halfbridge design ir2109 IR21094 PD60163-P IR21094S IR2109S MS-012AA IR21091	PDF

P CHANNEL 600V IGBT Search Results

P CHANNEL 600V IGBT Result Highlights (5)

P CHANNEL 600V IGBT Datasheets Context Search

24N60D1D

NF925

ISOPLUS247

IXTK32P60P

IR2110 application note

IR2110 application note

P-Channel MOSFET 600v

IR2131

note application IR2131

IR2133

P-Channel MOSFET 600v

application note ir2233j

APT35GL60BN

STGB7NB60HD

IR2109 application note