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    P-CHANNEL 1.8V MOSFET Search Results

    P-CHANNEL 1.8V MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL 1.8V MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    vcx 02 544

    Abstract: No abstract text available
    Text: FDC697P P-Channel 1.8V Specified Bottomless PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications.


    Original     		PDF FDC697P vcx 02 544

    Untitled

    Abstract: No abstract text available
    Text: Si3447DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		PDF Si3447DV

    A2635

    Abstract: V2500
    Text: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.


    Original     		PDF FDC606P A2635 V2500

    SSOT-6

    Abstract: No abstract text available
    Text: FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. •= –5.7 A, –12 V.


    Original     		PDF FDC604P SSOT-6

    FDC604P

    Abstract: 4360M
    Text: FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		PDF FDC604P FDC604P 4360M

    Si3445DV

    Abstract: No abstract text available
    Text: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		PDF Si3445DV

    Untitled

    Abstract: No abstract text available
    Text: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		PDF Si3445DV

    marking 606

    Abstract: diode marking EY
    Text: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.


    Original     		PDF FDC606P FDC606P NF073 marking 606 diode marking EY

    CBVK741B019

    Abstract: F63TNR FDC604P FDC633N
    Text: FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		PDF FDC604P CBVK741B019 F63TNR FDC604P FDC633N

    Untitled

    Abstract: No abstract text available
    Text: FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		PDF FDC604P

    FDC606P

    Abstract: No abstract text available
    Text: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.


    Original     		PDF FDC606P FDC606P

    CBVK741B019

    Abstract: F63TNR FDC604P FDC633N
    Text: FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		PDF FDC604P CBVK741B019 F63TNR FDC604P FDC633N

    Si3447DV

    Abstract: No abstract text available
    Text: Si3447DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		PDF Si3447DV

    DIODE A6 datasheet

    Abstract: DIODE A6
    Text: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.


    Original     		PDF FDC606P DIODE A6 datasheet DIODE A6

    FDN304P

    Abstract: marking code 10 sot23
    Text: FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2.4 A, –20 V.


    Original     		PDF FDN304P FDN304P marking code 10 sot23

    FDG6308P

    Abstract: SC70-6
    Text: FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –0.6 A, –20 V.


    Original     		PDF FDG6308P SC70-6 SC70-6 FDG6308P

    FDN304P

    Abstract: No abstract text available
    Text: FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2.4 A, –20 V.


    Original     		PDF FDN304P FDN304P

    Marking Code m sc70-6

    Abstract: FDG6316P
    Text: FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –0.7 A, –12 V.


    Original     		PDF FDG6316P SC70-6 SC70-6 Marking Code m sc70-6 FDG6316P

    marking A26

    Abstract: No abstract text available
    Text: FDN306P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2.6 A, –12 V.


    Original     		PDF FDN306P marking A26

    Untitled

    Abstract: No abstract text available
    Text: FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2.4 A, –20 V.


    Original     		PDF FDN304P

    FDG326P

    Abstract: SC70-6
    Text: FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –1.5 A, –20 V.


    Original     		PDF FDG326P SC70-6 SC70-6 FDG326P

    FDN306P

    Abstract: No abstract text available
    Text: FDN306P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2.6 A, –12 V.


    Original     		PDF FDN306P FDN306P

    Untitled

    Abstract: No abstract text available
    Text: FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2 A, –12 V.


    Original     		PDF FDG330P SC70-6 SC70-6

    Untitled

    Abstract: No abstract text available
    Text: FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –0.7 A, –12 V.


    Original     		PDF FDG6316P SC70-6 SC70-6