Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    P-CHANNEL 1.8V MOSFET Search Results

    P-CHANNEL 1.8V MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK2R4A08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    XPN1300ANC
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K517NU
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 6 A, 0.0391 Ohm@4.5V, UDFN6B Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL 1.8V MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    vcx 02 544

    Contextual Info: FDC697P P-Channel 1.8V Specified Bottomless PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications.


    Original     		FDC697P vcx 02 544 PDF

    Contextual Info: Si3447DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		Si3447DV PDF

    A2635

    Abstract: V2500
    Contextual Info: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.


    Original     		FDC606P A2635 V2500 PDF

    SSOT-6

    Contextual Info: FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. •= –5.7 A, –12 V.


    Original     		FDC604P SSOT-6 PDF

    FDC604P

    Abstract: 4360M
    Contextual Info: FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		FDC604P FDC604P 4360M PDF

    Si3445DV

    Contextual Info: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		Si3445DV PDF

    Contextual Info: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		Si3445DV PDF

    marking 606

    Abstract: diode marking EY
    Contextual Info: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.


    Original     		FDC606P FDC606P NF073 marking 606 diode marking EY PDF

    CBVK741B019

    Abstract: F63TNR FDC604P FDC633N
    Contextual Info: FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		FDC604P CBVK741B019 F63TNR FDC604P FDC633N PDF

    Contextual Info: FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		FDC604P PDF

    FDC606P

    Contextual Info: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.


    Original     		FDC606P FDC606P PDF

    CBVK741B019

    Abstract: F63TNR FDC604P FDC633N
    Contextual Info: FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		FDC604P CBVK741B019 F63TNR FDC604P FDC633N PDF

    Si3447DV

    Contextual Info: Si3447DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		Si3447DV PDF

    DIODE A6 datasheet

    Abstract: DIODE A6
    Contextual Info: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.


    Original     		FDC606P DIODE A6 datasheet DIODE A6 PDF

    FDN304P

    Abstract: marking code 10 sot23
    Contextual Info: FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2.4 A, –20 V.


    Original     		FDN304P FDN304P marking code 10 sot23 PDF

    FDG6308P

    Abstract: SC70-6
    Contextual Info: FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –0.6 A, –20 V.


    Original     		FDG6308P SC70-6 SC70-6 FDG6308P PDF

    FDN304P

    Contextual Info: FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2.4 A, –20 V.


    Original     		FDN304P FDN304P PDF

    Marking Code m sc70-6

    Abstract: FDG6316P
    Contextual Info: FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –0.7 A, –12 V.


    Original     		FDG6316P SC70-6 SC70-6 Marking Code m sc70-6 FDG6316P PDF

    marking A26

    Contextual Info: FDN306P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2.6 A, –12 V.


    Original     		FDN306P marking A26 PDF

    Contextual Info: FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2.4 A, –20 V.


    Original     		FDN304P PDF

    FDG326P

    Abstract: SC70-6
    Contextual Info: FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –1.5 A, –20 V.


    Original     		FDG326P SC70-6 SC70-6 FDG326P PDF

    FDN306P

    Contextual Info: FDN306P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2.6 A, –12 V.


    Original     		FDN306P FDN306P PDF

    Contextual Info: FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2 A, –12 V.


    Original     		FDG330P SC70-6 SC70-6 PDF

    Contextual Info: FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –0.7 A, –12 V.


    Original     		FDG6316P SC70-6 SC70-6 PDF