P-CHANNEL 30V DS MOSFET Search Results

AOP605

Abstract: AOP605L AOP605 Inverter MOSFET
Contextual Info: AOP605 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 7.5A (VGS = 10V) -6.6A (VGS = -10V) The AOP605 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The

STripFET

Abstract: STS3DPFS30
Contextual Info: STS3DPFS30 P - CHANNEL 30V - 0.065Ω - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V 0.09Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage

P Channel STripFET

Abstract: STripFET STS3DPFS30 mosfet p channel 30v 3a
Contextual Info: STS3DPFS30 P - CHANNEL 30V - 0.065Ω - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V 0.09Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage

STripFET

Abstract: STS3DPFS30L
Contextual Info: STS3DPFS30L P - CHANNEL 30V - 0.13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V <0.16Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage

MI3403

Abstract: iss 400 SOT233 iss-400 diode MI34 mi340
Contextual Info: MI3403 P -Channel 30 V D-S MOSFET Features General Description This miniature surface monut MOSFET uses V DS (V) = -30V advanced trench process , low R DS(on) assures minimal power loss and energy conversion , which makes this device ideal for use in power

STS3DPFS30L

Contextual Info: STS3DPFS30L  P - CHANNEL 30V - 0.13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on 30V <0.16Ω 3A SCHOTTKY IF (A V) V RRM V F(M AX) 3A 30V 0.51V ID SO-8 DESCRIPTION: This product associates the latest low voltage

STS3DPFS30

Abstract: mosfet p channel 30v 3a
Contextual Info: STS3DPFS30  P - CHANNEL 30V - 0.065Ω - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on 30V 0.09Ω 3A SCHOTTKY IF (A V) V RRM V F(M AX) 3A 30V 0.51V ID SO-8 DESCRIPTION: This product associates the latest low voltage

SSM4509GM

Contextual Info: SSM4509GM N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement N-CH BV DSS D2 D2 D1 D2 D1 D1 D1 Low on-resistance Fast switching characteristic SO-8 30V 14mΩ R DS ON ID G2 G2 S2 G1 S2 S1 G1 S1 10A P-CH BVDSS -30V RDS(ON) Description

STS3DPFS30

Contextual Info: STS3DPFS30 P - CHANNEL ENHANCEMENT MODE POWER MOSFET PLUS SCHOTTKY RECTIFIER TARGET DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V 0.09Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.44V SO-8 DESCRIPTION: This product associates the latest low voltage

STM2DPFS30L

Abstract: max8823
Contextual Info: STM2DPFS30L  P - CHANNEL 30V - 0.145Ω - 2A MiniS0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER  PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V <0.165Ω 2A SCHOTTKY IF (A V) V RRM V F(M AX) 1A 40V 0.55V MiniSO-8 DESCRIPTION:

SSM4532M

Contextual Info: SSM4532M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS N-ch Simple drive requirement BV D2 Low on-resistance G2 S2 SO-8 50mΩ R DS ON D2 D1 D1 Fast switching +30V DSS S1 P-ch G1 Description ID +5A BV DSS -30V RDS(ON) 70mΩ ID MOSFETs from Silicon Standard Corp. provide the

Contextual Info: WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET 8 7 6 D 3 S 5 D 4 G -10 AMPERES DRAIN SOURCE VOLTAGE D S 2 Features: DRAIN CURRENT D S 1 P b Lead Pb -Free -30 VOLTAGE * Super high dense * Cell design for extremely low R DS(ON) * -30V/-10A,R DS(ON)<30mΩ@VGS = -10V

45N03L

Abstract: FP45N03L F45N03L RFP45N03L 014E3 f45n 03LSM
Contextual Info: CIS H A R R IS RFP45N03L, RF1S45N03L, RF1S45N03LSM 45A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Packages Features JEDEC TO-220AB • 4 5 A , 30V • r DS ON = 0.022SJ • Tem perature C o m p e n s a tin g PS PICE Model

Contextual Info: DMP3028LSD 30V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Description • • • • • • This new generation MOSFET has been designed to minimize the onstate resistance RDS(ON and yet maintain superior switching Mechanical Data V(BR)DS

tsm3455

Contextual Info: s TAIW AN TSM3455 SEMICONDUCTOR 30V P-Channel MOSFET b RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS V) R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 1 70 @ VGS = -4.5V -2.7 -30 1 23

4957gm

Contextual Info: Advanced Power Electronics Corp. AP4957GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement BVDSS -30V Low On-resistance R DS ON 24mΩ Fast Switching Performance ID -7.7A RoHS-compliant, halogen-free D2 D1 G2 G1 Description S2 S1

IRF9410

Contextual Info: International I"R Rectifier P D -9.1562A PRELIMINARY IRF9410 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated V dss = 30V R ds oh = 0.030É2

4957agm

Contextual Info: Advanced Power Electronics Corp. AP4957AGM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement BVDSS -30V Low On-resistance R DS ON 26mΩ Fast Switching Performance ID -7.4A RoHS-compliant, halogen-free D2 D1 G2 G1 Description S2

SSM4407GM

Abstract: 4407gm 4407 MARKING CODE SO-8
Contextual Info: SSM4407GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS -30V R DS ON 14mΩ ID -10.7A DESCRIPTION The SSM4407GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC

Contextual Info: Advanced Power Electronics Corp. AP2625GY-HF-3 Dual P-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs BV DSS Low Gate Charge D2 D1 Low Gate Drive -30V R DS ON 185mΩ ID RoHS-compliant, halogen-free -2A G2 G1 S1 Description S2

SSM9435GM

Abstract: 9435GM mosfet 9435GM ssm9435 marking codes transistors SSs 9435g 24v 6A mosfet MOSFET code 9435gm
Contextual Info: SSM9435GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS -30V R DS ON 50mΩ ID -5.3A DESCRIPTION The SSM9435GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as battery

IRF7416

Contextual Info: PD - 9.1356D International IO R Rectifier IRF7416 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Voss = -30V ^DS on =

diode sy 171 10

Abstract: "DIODE" SY 171 1 g
Contextual Info: PD - 9.12 64 C International IOR Rectifier IRF7606 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching V qss = -30V f^DS(on) = 0.09Î2

Mosfet

Abstract: SSF3365
Contextual Info: SSF3365 30V P-Channel MOSFET D DESCRIPTION The SSF3365 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.