P-CHANNEL 400V 15A Search Results

20N50E1

Abstract: 20N50C g15n50c1 20N50C1 15N50C 15N50C1 15n50e1 20n40c G20N50C1 G15N50E1
Contextual Info: m U A Q D ie lÜ HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Packages Features H G TH -TY P E S JE D E C TO -218A C • 15A and 20A, 400V and 500V EMrTTER • V CE ON 2 -5 V COLLECTOR • Tp 1jjs, 0.5(is

RE26A

Contextual Info: Data Sheet No. PD-6.086A International I O R Rectifier IR 2 1 1 0 E 4 HIGH AND LOW SIDE DRIVER Product Summary Features Floating channel designed for bootstrap VOFFSET 400V max. lo+/- 2A/2A VOUT 1 0 -2 0 V ton/off ty p . 120 & 94 ns Delay Matching 10 ns

Contextual Info: A d van ced P o w er Te c h n o l o g y APT4030CNR POWER MOS IV 400V 15.0A 0.300ft Avalanche Rated N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS • Faster Switching 100% Avalanche Tested • Low Gate Charge Similar to the 2N7227, JX2N7227 and JV2N7227

fd320

Contextual Info: 2 HARRIS IRFD320/321/322/323 IRFD320R/321R/322R/323R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Features Package 4-P IN DIP • 0.5A and 0.4A, 350V - 400V TOP VIEW • rDS(on = 1-8n and 2 .5 fi • Single Pulse Avalanche Energy Rated*

733R

Abstract: F730 55a5e
Contextual Info: 23 HARRIS IR F730/731/732/733 IR F730R/731R/732R /733R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 F e a tu re s • Package T O -2 2 0 A B 4.5A and 5.5A, 350V - 400V T O P VIEW • r D S ° n = 1 -o f l a n d 1 -5 f l • Single Pulse Avalanche Energy Rated*

IRF341R

Contextual Info: [2 HARRIS IR F 3 4 0 /3 4 1 /3 4 2 /3 4 3 IR F 340R /341 R /3 4 2 R /343R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 19 9 1 P a ck a g e F e a tu re s T O -2 0 4 A A BOTTOM VIEW • 10A and 8.3A, 400V - 350V • rDS on = 0.55H and 0 .8 0 ÎÎ

RF1S42N03L

Contextual Info: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

DSR15U600

Contextual Info: DSR15U600 15A DIODESTAR RECTIFIER Features NEW PRODUCT • • • Mechanical Data TM • • DIODESTAR is a Proprietary Process for High Voltage Rectifiers which Delivers: • Ultra-Fast Reverse Recovery trr < 30ns Giving a Rapid Switching Response •

Contextual Info: DSR15V600 15A DIODESTAR RECTIFIER Mechanical Data Features N EW PRODU CT • • • TM • • DIODESTAR is a Proprietary Process for High Voltage Rectifiers which Delivers: • Ultra-Fast Reverse Recovery trr < 30ns Giving a Rapid Switching Response •

160877

Abstract: 160888
Contextual Info: Tension Clamp 35 mm DIN-Rail Terminals Disconnect ZTR 2.5 ZTR 2.5/3AN ZTR 2.5/D ZTR 2.5/3AN/D Lever Lever Plug Plug Terminal Block Selection Data AmlabteepHara Version Park No. Part No. Beige Wemid 160668 166830 Part No. with wire link 160873 Beige Wemid Beige Wemid

30N60S1

Abstract: FMP30N60S1 30N60S fuji electric lot code fuji lot code mosfet 452
Contextual Info: / FMP30N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] +0.5 4.5±0.2 1.3±0.2 2.7 ±0.1 10 Ø3.6 6.4 ±0.2 ±0.2 UPS Server Telecom Power conditioner system

Contextual Info: DSR15U600 15A DIODESTAR RECTIFIER Mechanical Data Features N EW PRODU CT • • • TM • • DIODESTAR is a Proprietary Process for High Voltage Rectifiers which Delivers: • Ultra-Fast Reverse Recovery trr < 30ns Giving a Rapid Switching Response •

FMH30N60S1

Abstract: FMH30N60 SCHEMATIC ups 600V 20A N-Channel MOSFET TO-3P 30N60S
Contextual Info: / FMH30N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] TO-3P 13 ± 0.2 4.5±0.2 Drain D UPS Server Telecom Power conditioner system Power supply 1.6

FMV30N60S1

Abstract: 30N60 FMV30
Contextual Info: / FMV30N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg

IR2110L4

Contextual Info: Data Sheet No. PD-6.085 International IOR Rectifier IR2110L4 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt Immune ■ Gate drive supply range from 10 to 20 V

Contextual Info: VX'>U-X 7X7 -MOSFET m & 7 ,-r'y 3 -y < 7 V X SERIES POWER MOSFET N -^ -V X > A > ^ y > h O U T L IN E D IM E N S IO N S C a s e : IT O -3 P 2SK1524 FP15W 50 5 . 5 ^ 0-3 / 3 .3 402 500V 15A t J / I - , 1 i i > > (f-ÿij.) Date code ¿.'i £ EIA.J N o . "

Contextual Info: Dato Sheet No. PD-6.086 International I R Rectifier IR 2 1 1 0 E 4 HIGH AND LOW SIDE DRIVER Product Summary Features • Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage VOFFSET 400V max.

Contextual Info: Data Sheet No. PD-6.024A International I R Rectifier IR 2 1 2 5 Z CURRENT LIMITING SINGLE CHANNEL DRIVER Features Product Summary • Floating channel designed for bootstrap 400V max. 1A /2A 1 2 - 18V 230 mv 150 & 150 ns Vo f f s e t operation Fully operational to + 4 0 0 V

Contextual Info: International IO R Rectifier IR2110L4 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +400V ■ ■ ■ ■ ■ ■ ■ Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

Contextual Info: PD - 60086B International IQ R Rectifier IR2110E4 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +400V ■ ■ ■ ■ ■ ■ ■ Tolerant to negative transient voltage dV/dt immune

Contextual Info: Data Sheet No. PD-6.085 International I R Rectifier IR 2 1 1 0 L 4 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

Nippon Chemi-Con KME

Abstract: AN1894 VIPER12 NIPPON KME viper12 design nippon chemi con kmg series RGL34J/600V/0.5A Nippon Chemi-Con KMG capacitor KME 12V DC to 1000V dC converter schematic diagram
Contextual Info: AN1894 - APPLICATION NOTE VIPower: VIPer12A NON ISOLATED BUCK AND BUCK-BOOST CONVERTER REFERENCE BOARD P. LIDAK - R. HAUSER ABSTRACT Presented circuit can be used to produce a single, non isolated positive or negative voltage. It is dedicated for building an auxiliary power supply based on the VIPer12AS monolithic device with rather