P-CHANNEL 60V MOSFET Search Results

Contextual Info: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998

mosfet pch 3a 60v

Abstract: JESD97 STS4C3F60L
Contextual Info: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly

Contextual Info: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly

JESD97

Abstract: STS4C3F60L s4c3f60l mosfet pch 3a 60v
Contextual Info: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly

n-channel so8 60v

Abstract: STS4C3F60L s4c3f60l Back Light Inverter
Contextual Info: STS4C3F60L N-CHANNEL 60V - 0.045 Ω - 4A SO-8 P-CHANNEL 60V - 0.100 Ω - 3A SO-8 StripFET MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID STS4C3F60L (N-Channel) STS4C3F60L (P-Channel) 60 V 60 V < 0.055 Ω < 0.120 Ω 4A 3A •

ZXMC6A09DN8

Abstract: ZXMC6A09DN8TA ZXMC6A09DN8TC 60V dual N-Channel trench mosfet 6A09 Dual P-Channel 2.5 V G-S MOSFET, drain-source voltage -30v
Contextual Info: ZXMC6A09DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure

ZXMHC6A07T8

Abstract: ZXMHC6A07T8TA ZXMHC6A07T8TC
Contextual Info: ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique

C6A07

Abstract: ZXMHC6A07T8 zxmh c6a07 ZXMHC6A07T8TA ZXMHC6A07T8TC
Contextual Info: ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique

marking 564

Abstract: FDC5614P
Contextual Info: FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –3 A, –60 V. Applications

FDC5614P

Contextual Info: FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –3 A, –60 V. Applications

Contextual Info: FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –3 A, –60 V. Applications

C6A07

Abstract: ZXMHC6A07T8 ZXMHC6A07T8TA ZXMHC6A07T8TC zxmhc6a07t
Contextual Info: ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique

ZXMC6A09DN8

Abstract: ZXMC6A09DN8TA ZXMC6A09DN8TC
Contextual Info: ZXMC6A09DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure

Contextual Info: P *3 3 S RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

8A60V

Abstract: RFD8P06E RFD8P06ESM RFD8P06ESM9A RFP8P06E TB334 bv254
Contextual Info: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

marking code fairchild FDD5614P

Abstract: FDD5614P 6680 MOSFET CBVK741B019 F63TNR FDD6680 On semiconductor date Code dpak 6680
Contextual Info: FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –15 A, –60 V. RDS ON = 100 mΩ @ VGS = –10 V

fdd5614p

Contextual Info: FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –15 A, –60 V. RDS ON = 100 mΩ @ VGS = –10 V

FDD5614P

Contextual Info: FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –15 A, –60 V. RDS ON = 95 mΩ @ VGS = –10 V

FDD5614P

Contextual Info: FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –15 A, –60 V. RDS ON = 100 mΩ @ VGS = –10 V

apm4588

Abstract: APM4588K STD-020C
Contextual Info: APM4588K Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 60V/5A, RDS(ON) = 38mΩ (typ.) @ VGS = 10V RDS(ON) = 55mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -60V/-3.5A, RDS(ON) = 80mΩ (typ.) @ VGS =-10V

F15P06

Abstract: RFD15P06 RFD15P06SM RFD15P06SM9A RFP15P06 TB334
Contextual Info: RFD15P06, RFD15P06SM, RFP15P06 Data Sheet January 2002 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs Features • 15A, 60V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives

FDD5614P

Abstract: S759
Contextual Info: FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –15 A, –60 V. RDS ON = 100 mΩ @ VGS = –10 V

RFP30P06

Abstract: R*P30P06 F1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 TB334
Contextual Info: RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs Features • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

P-CHANNEL 45A TO-247 POWER MOSFET

Abstract: RFG60P06E rfg60p06 TA09836
Contextual Info: RFG60P06E Data Sheet January 2002 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features • 60A, 60V The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits