P-CHANNEL ENHANCEMENT FET Search Results
P-CHANNEL ENHANCEMENT FET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P |
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TC7PCI3212MT |
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2 Differential Channel, 2:1 multiplexer/demultiplexer, SPDT, TQFN20, -40 to 85 degC |
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TLP294-4 |
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Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 |
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TLP293-4 |
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Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 |
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TLP295-4 |
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Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 |
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P-CHANNEL ENHANCEMENT FET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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100V 60A Mosfet
Abstract: 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode
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IRFU9110, IRFR9110 IRFU9120, IRFR9120 IRFR9220, IRFU9220 RFD8P06E, RFD8P06ESM, RFP8P06E RFD15P05, 100V 60A Mosfet 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode | |
Contextual Info: ACE1543B P-Channel Enhancement Mode Field Effect Transistor Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for |
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ACE1543B | |
Contextual Info: ACE2303B P-Channel Enhancement Mode Field Effect Transistor Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for |
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ACE2303B | |
Contextual Info: ACE9435B P-Channel Enhancement Mode Field Effect Transistor Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for |
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ACE9435B | |
Contextual Info: • bbS3131 □0236'ia 343 H A P X Philips Sem iconductors Data sheet status Product specification date of issue July 1993 0 g 3 3 4 N AMER PHILIPS/DISCRETE P-channel enhancement mode vertical D-MOS FET PINNING - SOT23 D ESCRIPTIO N Silicon p-channel enhancement |
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bbS3131 | |
marking 652 fairchildContextual Info: March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This |
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NDC652P NF073 marking 652 fairchild | |
P-Channel Enhancement Mode Vertical DMOS FET
Abstract: ZVP2120A ZVP2120C
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ZVP2120C ZVP2120A ZVP2120A -150mA P-Channel Enhancement Mode Vertical DMOS FET ZVP2120C | |
ZVP2120A
Abstract: to92 fet p channel DSA003787
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ZVP2120C ZVP2120A ZVP2120A to92 fet p channel DSA003787 | |
to92 fet p channel
Abstract: ZVP2110A ZVP2110C P-Channel Enhancement Mode Vertical DMOS FET
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ZVP2110C ZVP2110A ZVP2110A -375mA to92 fet p channel ZVP2110C P-Channel Enhancement Mode Vertical DMOS FET | |
ZVP2110A
Abstract: P-Channel FET 100v to92 to92 fet p channel DSA003787
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ZVP2110C ZVP2110A ZVP2110A P-Channel FET 100v to92 to92 fet p channel DSA003787 | |
Contextual Info: Not Recommended for New Design Please Use ZVP2120A P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω G REFER TO ZVP2120A FOR GRAPHS D G D S E-Line |
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ZVP2120A ZVP2120C ZVP2120A -150mA -150mA | |
ZVP2120A
Abstract: P-Channel FET 100v to92
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ZVP2120C ZVP2120A ZVP2120A P-Channel FET 100v to92 | |
Contextual Info: bbS3T31 00E5bEE SEM « A P X Philips Semiconductors BSS131 Data sheet status P r e lim in a r y s p e c ific a tio n date of issue A p r il 1 9 9 1 N-channel enhancement mode vertical D-MOS FET N AUER PHILIPS/DISCRETE DESCRIPTION QUICK REFERENCE DATA Silicon n-channel enhancement |
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bbS3T31 00E5bEE BSS131 | |
C1550
Abstract: p-channel 250V power mosfet
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TC1550 MS-012, DSFP-TC1550 A012508 C1550 p-channel 250V power mosfet | |
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ZVP2110AContextual Info: Not Recommended for New Design Please Use ZVP2110A P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110C P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω G REFER TO ZVP2110A FOR GRAPHS D G D S E-Line TO92 Compatible |
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ZVP2110A ZVP2110C ZVP2110A -375mA -375mA | |
Contextual Info: June 1997 NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is |
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NDS332P | |
620 tg diodeContextual Info: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode normally-off transistor utilizing an advanced |
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TC1550 TC1550 DSFP-TC1550 A091608 620 tg diode | |
p-channel 250V power mosfet
Abstract: C1550 TC1550 TC1550TG-G P-channel mosfet 500V
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TC1550 TC1550 DSFP-TC1550 A091608 p-channel 250V power mosfet C1550 TC1550TG-G P-channel mosfet 500V | |
Dn5dpContextual Info: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode normally-off transistor utilizing an advanced |
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TC1550 MS-012, F071408. DSFP-TC1550 A082108 Dn5dp | |
Piezoelectric 1Mhz
Abstract: p-channel 250V power mosfet P-channel Dual MOSFET VGS -25V high voltage piezoelectric transducer 27BSC MD1210K6 TC1550 TC1550TG-G 10nF 250v P-channel MOSFET VGS -25V
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TC1550 TC1550TG-G 27BSC DSFP-TC1550 NR011707 Piezoelectric 1Mhz p-channel 250V power mosfet P-channel Dual MOSFET VGS -25V high voltage piezoelectric transducer 27BSC MD1210K6 TC1550 10nF 250v P-channel MOSFET VGS -25V | |
c2320
Abstract: TC2320TG 125OC TC2320 TC2320TG-G
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TC2320 TC2320TG MS-012, DSFP-TC2320 A102607 c2320 125OC TC2320 TC2320TG-G | |
Contextual Info: TC2320 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description The Supertex TC2320 consists of a high voltage, low threshold N- and P-channel MOSFET in an 8-Lead SOIC package. This low threshold enhancement-mode normallyoff transistor utilizes an advanced vertical DMOS structure |
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TC2320 TC2320 DSFP-TC2320 B122208 | |
Piezoelectric 1Mhz
Abstract: piezoelectric transducer 27BSC MD1210K6 TC1550 TC1550TG-G
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TC1550 TC1550TG-G 27BSC DSFP-TC1550 NR092806 Piezoelectric 1Mhz piezoelectric transducer 27BSC MD1210K6 TC1550 | |
TC2320TG-G
Abstract: 125OC 27BSC TC2320 TC2320TG
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TC2320 TC2320TG 27BSC DSFP-TC2320 C112206 TC2320TG-G 125OC 27BSC TC2320 |