P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING Search Results

sot89-3

Contextual Info: MOS FET P-CHANNEL POWER MOS FET FOR SWITCHING The S-90P series is a P-channel power MOS FET that realizes low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection

S-90P0112SMA

Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Contextual Info: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

FET MARKING CODE

Abstract: sot-89 MARKING CODE 4A S-90P0332SUA-TF S-90P0112SMA S-90P0112SMA-TF S-90P0222SUA-TF
Contextual Info: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0112SMA-TF

Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF
Contextual Info: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0112SMA-TF

Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
Contextual Info: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0112SMA-TF

Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF 90P03
Contextual Info: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0112SMA-TF

Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
Contextual Info: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0112SMA

Abstract: FET MARKING CODE sot-89 MARKING CODE 4A S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Contextual Info: Rev.1.0_01 S-90P0112SMA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0222SUA

Abstract: 90P03 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Contextual Info: Rev.1.0_01 S-90P0222SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0332SUA

Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF 13003 TRANSISTOR equivalent
Contextual Info: Rev.1.0_01 S-90P0332SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

2SJ357

Abstract: TC-2490 C11531E
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ357 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH The 2SJ357 is a P-channel vertical MOS FET that can be Package Drawings unit: mm used as a switching element. The 2SJ357 can be directly driven by an IC operating at 5 V.

2SJ358

Abstract: MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package Drawings unit: mm The 2SJ358 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ358 can be 5.7 ±0.1 1.0 3 0.5 ±0.1 0.5 ±0.1 2.1

transistor 2sk

Abstract: S10ms 2SJ184 2SK1398 T100 T200
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ184 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ184, P-channel vertical type MOS FET, is a switching device

2SJ180

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ180 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ180, P-channel vertical type MOS FET, is a switching device

RJM0404JSC

Contextual Info: Preliminary Datasheet RJM0404JSC Silicon N/P Channel Power MOS FET 6 in 1 Type High Speed Power Switching R07DS0338EJ0500 Rev.5.00 May 11, 2011 Features •     For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting

Contextual Info: Preliminary Datasheet RJM0603JSC Silicon N/P Channel Power MOS FET 6 in 1 Type High Speed Power Switching R07DS0339EJ0501 Rev.5.01 Jul 22, 2011 Features •     For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting

RJM0603JSC

Abstract: PRSP0020DF-A
Contextual Info: Preliminary Datasheet RJM0603JSC Silicon N/P Channel Power MOS FET 6 in 1 Type High Speed Power Switching R07DS0339EJ0501 Rev.5.01 Jul 22, 2011 Features •     For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting

2SJ166

Abstract: 2SJ186 2SK1132 T100 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking
Contextual Info: m - MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SJ166 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8 ± 0.2 1.5 The 2SJ166, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power

Contextual Info: Preliminary Datasheet RJM0407JSC 40 V - 20 A - N/P Channel Power MOS FET 6 in 1 Type R07DS0368EJ0100 High Speed Power Switching Rev.1.00 Sep 20, 2012 Features •     For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting

2SJ356

Abstract: C10535E MEI-1202 marking pr p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS in mm a switching element that can be directly driven by the output of an 4.5 ±0.1 IC operating at 5 V.

2SJ180

Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SJ180 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ180, P-channel vertical type MOS FET, is a switching device w hich can be driven d ire ctly by the o u tp u t o f ICs having a 5 V power OUTLINE DIMENSIONS U n it: mm source.

2sj353 transistor

Abstract: 2SJ353 C10535E MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ353 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ353 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS in mm a switching element that can be directly driven by the output of an 7.0 MAX. This product has a low ON resistance and superb switching

S10ms

Abstract: 2SJ184 2SK1398 T100 T200 TC-7645A
Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SJ184 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ184, P-channel vertical type MOS FET, is a switching device OUTLINE DIMENSIONS U n it: mm 2.0 ± 0.2 4.0±0.2 o -H o 4 -0 .5 0 FEATURES Ft IO ö 0.45 w hich can be driven by 2.5 V power supply.

NEC Zener diode product List

Abstract: 2SJ178 2sj178 transistor
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD-EFFECT TRANSISTOR 2SJ178 P-CHANIMEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ178 is a p-channel vertical type MOS FET switching device