P-CHANNEL MOSFET Search Results

CMLDM7005

Abstract: Power MOSFET p-Channel n-channel dual CMLDM8005 TR
Contextual Info: Product Brief CMLDM7005 Dual, N-Channel CMLDM8005 (Dual, P-Channel) CMLDM7585 (N & P-Channel) SOT-563 20V, 650mA Dual, Complementary MOSFETs in the miniature SOT-563 package N-Channel P-Channel N & P-Channel Typical Electrical Characteristics Central Semiconductor’s CMLDM7005 (Dual, N-Channel),

Contextual Info: Product Brief CWDM305P Single, 5.3A P-Channel CWDM305PD (Dual, 5.3A P-Channel) CWDM305ND (Dual, 5.8A N-Channel) SOIC-8 30V, MOSFETs in the SOIC-8 package Typical Electrical Characteristics Central Semiconductor’s CWDM305P (Single, 5.3A P-Channel), CWDM305PD (Dual, 5.3A P-Channel), and CWDM305ND (Dual,

sot-363 n-channel mosfet

Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
Contextual Info: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel

Contextual Info: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one

Contextual Info: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one

EIGHT MOSFET ARRAY

Abstract: EIGHT p-channel MOSFET ARRAY MOSFET ARRAY 15 pin octal MOSFET ARRAY AP0130NA T-43-25 mosfet array p channel MOSFET ARRAY T432 octal p-channel ARRAY
Contextual Info: A T & T MELEC I C SSE D • □□5002b DDD2flS3 3 ■ OCTAL HIGH-VOLTAGE P-CHANNEL MOSFET ARRAY_ AP0130NA PRELIMINARY ^ Monolithic P-Channel Enhancement-Mode Description The AP0130NA Octal High-Voltage P-Channel MOSFET Array contains eight P-Channel DMOS drivers configured

Contextual Info: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel Order Number/Package P-Channel 7.0 SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low

Contextual Info: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low

p12p10

Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
Contextual Info: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851

TC2320TG

Abstract: ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA
Contextual Info: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low

Contextual Info: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low

Contextual Info: Supertexinc. TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVpss/BV^ N-Channel P-Channel 200V -200V Order Number/Package ^DS ON ( m 8 X ) N-Channel 7.0 SO-8 P-Channel 12 TC2320TG Features Low Threshold DMOS Technology □ Low threshold □ Low on resistance

MOSFET P-channel SOT-23

Abstract: Power MOSFET N-Channel sot-23 CMPDM7590 C759 CMPDM3590 C359 sot-23 P-Channel MOSFET MOSFET P channel SOT-23 P-Channel SOT-23 Power MOSFET
Contextual Info: Central CMPDM3590 N-CH CMPDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM3590 and CMPDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

marking code R

Abstract: MARKING CODE W
Contextual Info: Central CMBDM3590 N-CH CMBDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMBDM3590 and CMBDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

SSM6E01TU

Abstract: HIGH POWER MOSFET TOSHIBA
Contextual Info: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low

CMSDM7590

Abstract: marking CODE 75C Complementary MOSFETs logic level complementary MOSFET
Contextual Info: Central CMSDM3590 N-CH CMSDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSDM3590 and CMSDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

Si4500BDY

Abstract: Si4500BDY-T1 Si4500
Contextual Info: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.020 @ VGS = 4.5 V 9.1 0.030 @ VGS = 2.5 V 7.5 0.060 @ VGS = −4.5 V −5.3

Contextual Info: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.020 @ VGS = 4.5 V 9.1 0.030 @ VGS = 2.5 V 7.5 0.060 @ VGS = −4.5 V −5.3

Contextual Info: Si4500BDY New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel - 20 rDS(on) (W) ID (A) 0.020 @ VGS = 4.5 V 9.1 0.030 @ VGS = 2.5 V 7.5 0.060 @ VGS = - 4.5 V

si3529

Abstract: Si3529DV SI3529DV-T1-E3
Contextual Info: Si3529DV New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel rDS(on) (W) 0.125 @ VGS = 10 V 2.250 0.165 @ VGS = 4.5 V 1.95 0.215 @ VGS = –10 V –1.76 0.335 @ VGS = –4.5 V

Contextual Info: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested

KTA 3-25

Abstract: SSM6E01TU SSM6E
Contextual Info: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. · Low power dissipation due to P-channel MOSFET that features low

Contextual Info: Si9942DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N Channel N-Channel 20 P Channel P-Channel –20 20 rDS(on) (W) ID (A) 0.125 @ VGS = 10 V "3.0 0.250 @ VGS = 4.5 V "2.0 0.200 @ VGS = –10 V "2.5 0.350 @ VGS = –4.5 V "2.0

Contextual Info: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low