P-CHANNEL MOSFET 30V TO220 Search Results

f10p03l

Abstract: TC227 25e-2 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L
Contextual Info: RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet July 1999 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET Title FD1 03L, D10 3LS eyrds ter- 3515.2 Features • 10A, 30V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process,

f10p03l

Abstract: TC227 RFD10P03LSM RFD10P03L RFD10P03LSM9A RFP10P03L Logic Level p-Channel Power MOSFET 10P03L
Contextual Info: RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet July 1999 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET 3515.2 Features • 10A, 30V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

f10p03l

Abstract: RFD10P03LSM RFD10P03L RFD10P03LSM9A RFP10P03L Logic Level p-Channel Power MOSFET TC227
Contextual Info: RFD10P03L, RFD10P03LSM, RFP10P03L S E M I C O N D U C T O R 10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET May 1997 Features Description • 10A, 30V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100P03 Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high

F10P03L

Abstract: 10P03L p-channel mosfet BL Harris Semiconductor Integrated Circuits N10T TC227 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L
Contextual Info: RFD10P03L, RFD10P03LSM, RFP10P03L HARRIS S E M I C O N D U C T O R 10A, 30V, 0.200&, Logic Level P-Channel Power MOSFET May 1997 Features Description • 10A, 30V These products are P-Channel power MOSFETs manufac­ tured using the MegaFET process. This process, which uses

f10p03l

Abstract: 10P03L 10p03 Logic Level p-Channel Power MOSFET TA49205 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L n097
Contextual Info: RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet January 2002 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET Features These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

Contextual Info: AP4407GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS -30V RDS ON 14mΩ

Contextual Info: AP6679GS/P RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance D Simple Drive Requirement Fast Switching Characteristic G BVDSS -30V RDS ON 9m ID -75A S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: AP6679GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant BVDSS -30V RDS ON 9mΩ ID -75A S Description

low threshold mosfet p-channel TO-220

Abstract: ut70p03 UT70P03L-TM3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT70P03 Power MOSFET 75A, 30V P-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UT70P03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in

AP6679P

Abstract: 24AVG
Contextual Info: AP6679S/P Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G BVDSS -30V RDS ON 9mΩ ID -75A S Description The Advanced Power MOSFETs from APEC provide the

Contextual Info: AP4407S/P Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET  Lower On-resistance D  Simple Drive Requirement  Fast Switching Characteristic BVDSS -30V RDS ON 14m ID G -50A S Description The Advanced Power MOSFETs from APEC provide the

Contextual Info: AP6679GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance D Simple Drive Requirement Fast Switching Characteristic G BVDSS -30V RDS ON 9m ID -75A RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: AP4407GS/P RoHS-compliat Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS D -30V RDS ON Simple Drive Requirement Fast Switching Characteristic ID G 14m -50A S Description Advanced Power MOSFETs from APEC provide the designer with

Contextual Info: AP6679BGP-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance D Simple Drive Requirement Fast Switching Characteristic G BVDSS -30V RDS ON 9m ID -63A RoHS Compliant & Halogen-Free S Description

Contextual Info: AP4407I-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS D RDS ON Simple Drive Requirement Fast Switching Characteristic ID G -30V 14m -40A RoHS Compliant & Halogen-Free S Description

Contextual Info: AP6679BGI-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance D Simple Drive Requirement Fast Switching Characteristic G BVDSS -30V RDS ON 9m ID -48A RoHS Compliant & Halogen-Free S Description

Contextual Info: AP4433GI-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET D Low On-resistance Simple Drive Requirement Fast Switching Characteristic RoHS Compliant & Halogen-Free G BVDSS -30V RDS ON 32m ID -21A S Description

Contextual Info: AP40P03GI-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS D RDS ON Simple Drive Requirement Fast Switching Characteristic ID G -30V 28m -30A RoHS Compliant & Halogen-Free S Description

6679GP

Abstract: 6679GS 6679G L2AA 6679 ap6679g
Contextual Info: AP6679GS/P RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G BVDSS -30V RDS ON 9mΩ ID -75A S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: AP6679BGP-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G BVDSS -30V RDS ON 9mΩ ID

Contextual Info: AP4407I-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS -30V RDS ON 14mΩ ID

AP85T03GP

Contextual Info: AP85T03GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Simple Drive Requirement Fast Switching Characteristic RoHS Compliant & Halogen-Free G BVDSS 30V RDS ON 6m ID 75A S Description

Contextual Info: AP6679GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Single Drive Requirement Lower On-resistance G BVDSS -30V RDS ON 9m ID -48A S Description Advanced Power MOSFETs from APEC provide the