P-CHANNEL MOSFET 400V Search Results
P-CHANNEL MOSFET 400V Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P |
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TK065U65Z |
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MOSFET, N-ch, 650 V, 38 A, 0.065 Ohm@10V, TOLL |
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TK5R1P08QM |
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MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK |
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TK190E65Z |
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N-ch MOSFET, 650 V, 0.19 Ω@10V, TO-220, DTMOSⅥ |
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TK090U65Z |
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MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL |
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P-CHANNEL MOSFET 400V Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FQB1P50 P-Channel QFET MOSFET -500 V, -1.5 A, 10.5 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to |
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FQB1P50 | |
P-Channel mosfet 400v to220
Abstract: FQP3P50 P-Channel mosfet 400v 10 A to220
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FQP3P50 FQP3P50 O-220 P-Channel mosfet 400v to220 P-Channel mosfet 400v 10 A to220 | |
Contextual Info: FQP3P50 P-Channel QFET MOSFET -500 V, -2.7 A, 4.9 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state |
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FQP3P50 O-220 FQP3P50 | |
Contextual Info: FQB1P50 / FQI1P50 P-Channel QFET MOSFET - 500 V, - 1.5 A, 10.5 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to |
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FQB1P50 FQI1P50 FQI1P50 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50-P Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N50-P is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the |
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5N50-P 5N50-P QW-R205-027 | |
circuit diagram of mosfet based smps power supply
Abstract: FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel
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new/fdc6901l FDC6901L FDJ129P Power247TM, circuit diagram of mosfet based smps power supply FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel | |
FQPF2P40Contextual Info: QFET TM FQPF2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize |
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FQPF2P40 -400V, FQPF2P40 | |
FQP2P40Contextual Info: QFET TM FQP2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize |
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FQP2P40 -400V, FQP2P40 | |
Contextual Info: FQD3P50 / FQU3P50 P-Channel QFET MOSFET - 500 V, - 2.1 A, 4.9 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to |
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FQD3P50 FQU3P50 FQU3P50 | |
Contextual Info: QFET FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize |
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FQD2P40 FQU2P40 -400V, FQU2P40 | |
Contextual Info: QFET TM FQB2P40 / FQI2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize |
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FQB2P40 FQI2P40 -400V, FQI2P40TU O-262 | |
FQD2P40Contextual Info: QFET TM FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize |
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FQD2P40 FQU2P40 -400V, FQU2P40TU O-251 FQU2P40 | |
FQB2P40
Abstract: FQI2P40
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FQB2P40 FQI2P40 -400V, FQI2P40 | |
FQD2P40
Abstract: FQU2P40
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FQD2P40 FQU2P40 -400V, FQU2P40 | |
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FQD2P40
Abstract: FQU2P40
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FQD2P40 FQU2P40 -400V, FQU2P40 | |
P-Channel mosfet 400v to220Contextual Info: FQP2P40 June 2000 QFET TM FQP2P40 400V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQP2P40 -400V, O-220 P-Channel mosfet 400v to220 | |
Contextual Info: FQP4P40 August 2000 QFET FQP4P40 TM 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQP4P40 -400V, | |
FQG4904
Abstract: 40v N- and P-Channel dip
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FQG4904 -400V, FQG4904 40v N- and P-Channel dip | |
400v p-channel mosfet
Abstract: FQP4P40 P-Channel mosfet 400v to220
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FQP4P40 -400V, 400v p-channel mosfet FQP4P40 P-Channel mosfet 400v to220 | |
40v N- and P-Channel dip-8Contextual Info: TM FQG4904 400V Dual N & P-Channel MOSFET General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQG4904 -400V, FQG4904TU 40v N- and P-Channel dip-8 | |
Contextual Info: FQPF2P40 June 2000 QFET TM FQPF2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQPF2P40 -400V, | |
FQD4P40
Abstract: FQU4P40
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FQD4P40 FQU4P40 -400V, FQU4P40 | |
Contextual Info: FQD4P40 / FQU4P40 January 2009 QFET FQD4P40 / FQU4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD4P40 FQU4P40 -400V, | |
400v p-channel mosfetContextual Info: FQB4P40 / FQI4P40 August 2000 QFET TM FQB4P40 / FQI4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQB4P40 FQI4P40 -400V, FQB4P40TM O-263 400v p-channel mosfet |