P-CHANNEL MOSFET 800V Search Results

AUIRF9Z34N

Contextual Info: PD - 97627A AUTOMOTIVE GRADE AUIRF9Z34N HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax

AUIRF9Z34N

Abstract: AUIRF9Z34 AEC-Q101 to220ab
Contextual Info: PD - 97627A AUTOMOTIVE GRADE AUIRF9Z34N HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax

Contextual Info: AUIRF9Z34N TO-220AB AUIRF9Z34N Features l l l l l l l l l Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

4NB80

Abstract: STP4NB80 c60930
Contextual Info: STP4NB80 STP4NB80FP N - CHANNEL 800V - 3Î2 - 4A - T O -220/T0220F P PowerMESH MOSFET TYPE V STP4NB 80 STP4NB80FP • . . . . dss 800 V 800 V R D S o n Id 3.3 Q. 3.3 Q, 4 A 4 A TYPICAL RDS(on) = 3 £2 EXTREMELY HIGHdv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: Illl Vrr r = mi SEM E SML8028JVR LAB S O T -2 2 7 P ackage O utline. 5TH GENERATION MOSFET Dimensions in mm inches 1 1.8 (0 .4 6 3 ) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) ^DS(on) • • • • 800V 28A 0.280Q Faster Switching

sml8030jvr

Abstract: sm 170 380
Contextual Info: Illl Vrr r = mi SEM E SML8030JVR LAB S O T -2 2 7 P ackage O utline. 5TH GENERATION MOSFET Dimensions in mm inches 1 1.8 (0 .4 6 3 ) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) ^DS(on) • • • • 800V 25A 0.300Q Faster Switching

P4NB80

Abstract: STP4NB80FP STP4NB80 p4nb
Contextual Info: STP4NB80 STP4NB80FP  N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH MOSFET TYPE STP4NB80 STP4NB80F P • ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V 3.3 Ω 3.3 Ω 4A 4A TYPICAL RDS(on) = 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

SML8015JVR

Contextual Info: Illl Vrr r = mi SEM E SML8015JVR LAB S O T -2 2 7 P ackage O utline. 5TH GENERATION MOSFET Dimensions in mm inches 1 1.8 (0 .4 6 3 ) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) ^DS(on) • • • • 800V 44A 0.150Q Faster Switching

Contextual Info: Vrr r = mi Illl SEM E SML8030LVR LAB 5TH GENERATION MOSFET T O -2 6 4 A A P ackage O utline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) . 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) 3.10 (0.122)

dc-ac converter royer

Abstract: 12v schematic of fluorescent lamps schematic diagram modified sine wave dc-ac inverter Royer resonant an1722 ccfl Royer converter tsm108 transformer winding formula 220v Ac to 12v Dc royer dc-ac converter royer 220v
Contextual Info: AN1722 APPLICATION NOTE Design and Realization of a CCFL Application Using TSM108, STN790A, or STS3DPFS30, and STSA1805 1. ABSTRACT This technical document shows how to use the integrated circuit TSM108, the PNP power bipolar transistor STN790A, or the P channel power MOSFET STS3DPFS30, the NPN power bipolar transistor

Contextual Info: mi Vrr r = mi SEM E SML8065SVR LAB 5TH GENERATION MOSFET D3PAK P ackage O utline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 4.98 (0.196) 5.08 (0.200) 15.95 (0.628) 16.05 (0.632) 1.47 (0.058) 1.57(0.062) 13.41 (0.528) „1 3 .5 1 (0 .5 3 2 )'.

STP3NB100

Contextual Info: STP3NB100 STP3NB100FP N - CHANNEL 1000V - 5.3 Î2 - 3 A - TO-220/TO-220FP _ PowerMESH MOSFET T A R G E T DATA TYPE V S T P 3 N B 100 S T P 3 N B 100FP • . . . . dss 1000 V 1000 V R D S o n Id < 6 Q. < 6 Q. 3 A 3 A TYPICAL RDS(on) = 5.3 £1

Contextual Info: 2SK1691 A P Advanced Perform ance Series 2090 V dss~ 4 5 0 V N Channel Power MOSFET F e a tu re s - Low ON resistance. • Very high-speed switching. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage V d ss Gate to Source Voltage

Contextual Info: MITSUBISHI Neh POWER MOSFET F S V 5 S - 1 6 A HIGH-SPEED SWITCHING USE FS5VS-16A OUTLINE DRAWING q w e Q w r V d s s . 800V Dimensions in mm •st 6 +i CO oi q w e r GATE DRAIN SOURCE

Contextual Info: MITSUBISHI Neh POWER MOSFET FS3UM-16A HIGH-SPEED SWITCHING USE FS3UM-16A O UTLINE DRAWING Dimensions in mm 4.5 1.3 '0 LU U LU q e w O a q w e r q o- V d s s .800V rDS ON (MAX) .3.3Í1

FS7SM16A

Abstract: 40ZA
Contextual Info: MITSUBISHI Neh POWER MOSFET FS7SM-16A HIGH SPEED SWITCHING USE FS7SM-16A • Vd s s • 800V 1.640 •■■ 7A . • TDS ON (MAX) • I D . APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5VS-16A HIGH-SPEED SWITCHING USE FS5VS-16A OUTLINE DRAWING Dimensions in mm • V dss . 800V • rDS ON (MAX) . 2.3Q

HCO2

Contextual Info: MITSUBISHI Neh POWER MOSFET ! FS7KM-16A I i HIGH-SPEED SWITCHING USE FS7KM-16A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 # J 2.8 ± 0 .2 # • V dss . 800V • rDS ON (MAX) .1 .6 4 0

FS5KM16A

Abstract: mosfet 10a 800v FS5KM-16A MOSFET 800V 16A
Contextual Info: MITSUBISHI Neh POWER MOSFET FS5KM-16A HIGH-SPEED SWITCHING USE FS5KM-16A OUTLINE DRAWING Dimensions in mm 10 ± 0 . 3 2.8 ± 0 . 2 V d s s . 800V rDS ON (MAX) . 2.3Í1

T7111

Contextual Info: MITSUBISHI Neh POWER MOSFET FS3VS-16A HIGH-SPEED SWITCHING USE FS3VS-16A OUTLINE DRAWING I q J w e Q w r V d s s . 800V I d . 3A

FS2KM16A

Abstract: FS2KM-16A B1037
Contextual Info: MITSUBISHI Neh POWER MOSFET FS2KM-16A HIGH-SPEED SWITCHING USE FS2KM-16A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 * 2.8 ± 0 .2 * V d s s . 800V rDS ON (MAX) . 6.0Í2

TO-220FN Switching power supply

Contextual Info: MITSUBISHI Neh POWER MOSFET FS2KM-16A HIGH-SPEED SWITCHING USE FS2KM-16A OUTLINE DRAWING Dimensions in mm 2.8 ± 0.2 10 ± 0 3 w v y • V dss . 800V • TDS ON (MAX) . 6 .0 0

Contextual Info: MITSUBISHI Neh POWER MOSFET FS3SM-16A HIGH-SPEED SWITCHING USE FS3SM-16A OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 trT 4.4 1.0 5.45 5.45 0.6 4 Q w r q w e r q V d s s . 800V

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5UM-16A HIGH-SPEED SWITCHING USE FS5UM-16A • VOSS . 800V • TDS ON (MAX) . 2 .3 ÎÎ • I D . 5A