P-CHANNEL ULTRAFET POWER MOSFETS Search Results

4.5V TO 100V INPUT REGULATORS

Contextual Info: HUF76613D3, HUF76613D3S Semiconductor March 1999 Advance Inform ation 100V, 0.124 Ohm, 14A, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs File Number 4689.3 Features Ultra Low On-Resistance, r^ g p N = 0.1 15£2, VGS= 1 0 \/

76107P

Abstract: ms101c DS20A TA76107
Contextual Info: interrii HUF76107P3 Data Sheet O ctober 1999 20A, 30V, 0.052 Ohm, N-Channeì, Logic Level UltraFET Power MOSFETs F ile N um ber 4382.5 Features • Logic Level G ate Drive Th ese N -Channel power M O S F E T s are m anufactured using • 20A, 3 0V the innovative UltraFET process.

U420B

Abstract: IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast
Contextual Info: Power MOSFETs for Compact Ballast Applications Power MOSFETs for Compact Ballast Applications Optoelectronics Drive Circuit with Passive Components Fairchild's complementary MOSFET solution offers a simplified driving circuit, with a few passive components, that eliminates the saturable auxiliary

d3s diode

Abstract: d3s schottky Ic d3s DIODE D3S 90
Contextual Info: Audio B an d w id th Designs 20W - 400W M ultimedia, Autom otive, Home Theater m/^ Half Bridge and Full Bridge Features: 20Hz - 22kHz Bandwidth >90% Efficiency ^ ^ <0.05% THD >95db SNR FCC Class-B/CE Com pliant COMING SOON A Full Portfolio of Audio Components for Audio Switching Pow er Supplies

Contextual Info: in terd i HUF75321D3, HUF75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N -Channel U ltraFET Power MOSFETs These N-Channel power M O SFETs u m are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

76107d

Abstract: TA76107 F76107D3S F7610 dlis
Contextual Info: in te r r ii HUF76107D3, HUF76107D3S Data S heet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Th ese N -Channel power u m t$ ' M O S F E T s are m anufactured using J u ly 1999 F ile N u m b e r 4701.1 Features • Logic Level G ate Drive

fairchild mosfet selection guide

Abstract: FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60
Contextual Info: Q-FETTM Line Card Fairchild Power MOSFETs QFETTM Line Card Overview Fairchild Semiconductor, a leading innovator in the design and manufacture of high-performance semiconductors, introduces QFETTM, an advanced technology for power MOSFETs. QFETTM Optoelectronics

15A POWER TRANSISTOR FOR SMPS

Abstract: list of n channel power mosfet FQPF*10n20c FAN7601 detailed vfd circuit diagram for motor FAN7601 application data list of P channel power mosfet 80a charger transformer dual Phototransistor mouse FQPF10N20C
Contextual Info: New LEDs and LED Driver IC Solutions 1 • Comprehensive New Product List • New Product Highlights FAN7031, FAN7023, FAN7005 - Audio Amplifiers FIN7216-01 - Quad PHY FAN7556 - Voltage Mode PWM Controller FAN7601 - Current Mode PWM Controller FSA3357 - SP3T Analog Switch

sss4n60a

Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
Contextual Info: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high

a106 capacitor

Abstract: 4490 mosfet B45 SO8 ATX MOTHERBOARD CIRCUIT diagram HIP6017 HIP6017EVAL1 HIP6019 HIP6019EVAL1 T60-52 mosfet T60
Contextual Info: Total Power Conversion Solutions for Computer Motherboards Using HIP6017, HIP6019 Controller ICs Application Note April 1998 AN9800.1 Author: Bogdan M. Duduman Introduction The evaluation board features a 5-bit DAC-controlled synchronous buck converter targeted at the microprocessor

atx power supply schematic

Abstract: 39-29-9042 ATX12v schematic HIP6601ACB ATX12V HIP6301EVAL2 HIP6503EVAL1 PGA423 TP10 Molex Quick mate
Contextual Info: Three-Phase Buck Switching Converter for Pentium 4 Processors HIP6301EVAL2 TM Application Note August 2000 AN9906 Author: Bogdan M. Duduman Introduction the 5V output of the ATX supply (take necessary precautions, as the resistor may get very hot). The increased bandwidth and faster operation of the newest

MOSFET FOR SWITCHING FREQUENCY OF MORE THAN 20mhz

Abstract: AN-7500
Contextual Info: Understanding Power MOSFETs October 1999 Application Note Introduction /Title 7500 Subect Under tandng ower OSETs, nteril orpoation) Autho ) Keyords ) Cretor () DOCI FO dfark Pageode Useutines DOCIEW dfark Power MOSFETs (Metal Oxide Semiconductor, Field Effect

TA17465

Abstract: RF4E20N50 power mosfet 500v 20a circuit A1025
Contextual Info: RF4E20N50S Data Sheet 20A, 500V, 0.240 Ohm, N-Channel Power MOSFETs May 2002 Features • 20A, 500V [ /Title These are N-Channel enhancement mode silicon gate • rDS ON = 0.240Ω (HUF75 power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated

AN72

Abstract: AN-7500
Contextual Info: Understanding Power MOSFETs Application Note Introduction [ /Title AN72 44 /Subject (Under standing Power MOSFETs, Intersil Corporation) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark Power MOSFETs (Metal Oxide Semiconductor, Field Effect

high side and low side dual channel gate driver

Abstract: C-111 ED-4701 HIP6302 HIP6303 HIP6602A HIP6602ACB HIP6602ACB-T
Contextual Info: HIP6602A TM Data Sheet August 2000 Dual Channel Synchronous-Rectified Buck MOSFET Driver The HIP6602A is a high frequency, two power channel MOSFET driver specifically designed to drive four power N-Channel MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with a HIP63xx

1E14

Abstract: 2E12 2N7274D 2N7274H 2N7274R
Contextual Info: REGISTRATION PENDING Currently Available as FRM230 D, R, H 2N7274D, 2N7274R 2N7274H March 2001 Features Radiation Hardened N-Channel Power MOSFETs Package • 8A, 200V, RDS(on) = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

HIP6602CB

Abstract: C-111 ED-4701 HIP6302 HIP6303 HIP6602 HIP6602CB-T
Contextual Info: HIP6602 TM Data Sheet August 2000 Dual Channel Synchronous-Rectified Buck MOSFET Driver The HIP6602 is a high frequency, two power channel MOSFET driver specifically designed to drive four power N-Channel MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with a HIP63xx

HIP6601ACB

Abstract: MO-220-VGGC HIP6601A HIP6601ACB-T HIP6601ECB HIP6603A HIP6603ACB HIP6603ACB-T HIP6603ECB HIP6604
Contextual Info: HIP6601A, HIP6603A, HIP6604 TM Data Sheet February 2001 File Number Synchronous Rectified Buck MOSFET Drivers Features The HIP6601A, HIP6603A and HIP6604 are high frequency, dual MOSFET drivers specifically designed to drive two power N-Channel MOSFETs in a synchronous rectified buck

1E14

Abstract: 2E12 2N7274D 2N7274H 2N7274R
Contextual Info: REGISTRATION PENDING Currently Available as FRM230 D, R, H 2N7274D, 2N7274R 2N7274H December 2001 Features Radiation Hardened N-Channel Power MOSFETs Package • 8A, 200V, RDS(on) = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

pdp scan driver

Abstract: fan7361* application
Contextual Info: FAN7361,FAN7362 High-Side Gate Driver Features Description • Floating Channel Designed for Bootstrap Operation to +600V The FAN7361/FAN7362, a monolithic high-side gate driver IC, can drive MOSFETs and IGBTs which operate up to +600V. Fairchild’s high voltage process and common-mode noise canceling techniques

high side gate driver GTO

Contextual Info: FAN7361, FAN7362 High-Side Gate Driver Features Description „ Floating Channel Designed for Bootstrap Operation to The FAN7361/FAN7362, a monolithic high-side gate driver IC, can drive MOSFETs and IGBTs that operate up to +600V. Fairchild’s high-voltage process and commonmode noise canceling techniques provide stable operation of the high-side driver under high dv/dt noise circumstances. An advanced level shift circuit offers high-side

FRF9250R

Abstract: 1E14 2E12 FRF9250D FRF9250H Rad Hard in Fairchild for MOSFET
Contextual Info: FRF9250D, FRF9250R, FRF9250H 14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 14A, -200V, RDS on = 0.315Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot

FRK260

Contextual Info: FRK260D, FRK260R, FRK260H 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 46A, 200V, RDS on = 0.070Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRM130D, FRM130R, FRM130H 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 14A, 100V, RDS on = 0.180Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current