P-I-N PHOTODIODE 10 GHZ Search Results

MXPE-LN

Abstract: MXAN-LN-20 lithium niobate 40
Contextual Info: 10:18 Page 1 MXAN-LN-10/20 Lithium Niobate 10 and 20 GHz Analog Intensity Modulators MXAN-LN-10/20 Lithium Niobate 10 and 20 GHz Analog Intensity Modulators us Features Photline Technologies is a provider of lithium niobate based modulation solutions. The primary market served by the company are : optical telecommunications defense and aerospace - sensing and measurement equipments - research

MBC-1000

Abstract: MXPE-LN Niobate bias controller modulator optic
Contextual Info: MXAN-LN-20 6/06/07 12:37 Page 1 MXAN-LN-10/20 Lithium Niobate 10 and 20 GHz Analog Intensity Modulators us About Features Photline Technologies is a provider of lithium niobate based modulation solutions. The primary market served by the company are : optical telecommunications defense and aerospace - sensing and measurement equipments - research

MXPE-LN

Contextual Info: MXPE-LN 6/06/07 12:42 Page 1 MXPE-LN series - Very High Extinction Ratio Lithium Niobate Intensity Modulators Ordering MXPE-LN series Very High Extinction Ratio Lithium Niobate Intensity Modulators MXPE-LN-BW-XX-Y-Z-AB-CD us About BW : 10 bandwidth >10 GHz

Contextual Info: MX-LN10 6/06/07 11:55 Page 1 MX-LN-10/20 Lithium Niobate 10 & 20 Gb/s Intensity Modulators Ordering information MX-LN-BW-XX-Y-Z-AB-CD BW : 10 bandwidth ≥12 GHz ; 20 bandwidth ≥18 GHz XX : 00 no photodiode; PD internal monitoring photodiode Y : input fiber : P polarisation maintening; S standard single mode

MXPE-LN

Contextual Info: MXAN-LN-20 6/06/07 12:37 Page 1 MXAN-LN-10/20 Lithium Niobate 10 and 20 GHz Analog Intensity Modulators us About Features Photline Technologies is a provider of lithium niobate based modulation solutions. The primary market served by the company are : optical telecommunications defense and aerospace - sensing and measurement equipments - research

MXPE-LN

Contextual Info: MXPE-LN 3/06/05 10:36 Page 1 MXPE-LN series Very High Extinction Ratio Lithium Niobate Intensity Modulators MXPE-LN series - Very High Extinction Ratio Lithium Niobate Intensity Modulators 1010011001 Ordering information MXPE-LN-W-XX-Y-Z-AB-CD W : 10 bandwidth >10 GHz

MXPE-LN

Abstract: MXPE-LN-10 MBC-1000
Contextual Info: MXPE-LN 6/06/07 12:42 Page 1 MXPE-LN series - Very High Extinction Ratio Lithium Niobate Intensity Modulators Ordering MXPE-LN-BW-XX-Y-Z-AB-CD us About BW : 10 bandwidth >10 GHz XX : 00 no photodiode; PD internal monitoring photodiode Y : input fiber : P polarisation maintaining; S standard single mode

MXPE-LN

Abstract: MXPE-LN-10
Contextual Info: MXPE-LN 6/06/07 12:42 Page 1 MXPE-LN series - Very High Extinction Ratio Lithium Niobate Intensity Modulators Ordering MXPE-LN-BW-XX-Y-Z-AB-CD us About BW : 10 bandwidth >10 GHz XX : 00 no photodiode; PD internal monitoring photodiode Y : input fiber : P polarisation maintaining; S standard single mode

Contextual Info: HFE4380-321 Connectorized High Speed VCSEL FEATURES • Designed for drive currents between 5 and 15 mA • Prealigned SC Connector sleeve • Optimized for low dependence of electrical properties over temperature • High speed a 1 GHz • • Two different laser/photodiode polarities

EPITAXX

Abstract: InGaas PIN photodiode, 1550 pin Photodiode 1550 nm EPITAXX ETX 75 photodiode 1550 nm pin Photodiode 2 GHz radiall connector d4connector
Contextual Info: EPI ETX 75FJ-SLR60 iiiiiiim iin a n m m 60 dB Optical Return Loss InGaAs PIN Photodiode Module Preliminary Specifications Features • ■ ■ ■ ■ Low back reflection at 1300 and 1550 nm High responsivity at 1300 and 1550 nm Bandw idth greater than 1 GHz

hfe4381

Abstract: trane
Contextual Info: HFE4381-321 Connectorized High Speed VCSEL FEATURES • Designed for drive currents between 5 and 15 mA • Prealigned SC Connector sleeve • Optimized for low dependence of electrical properties over temperature • High speed a 1 GHz • Two different laser/photodiode polarities

laser 1550 nm 5 GHz

Abstract: laser transmitter 1550 nm high power 1550 dfb laser diode ORTEL DFB laser analog laser diode 6 GHz 10371A dfb laser diode 1550 fiber delay line laser 1550 nm laser diode 6 GHz
Contextual Info: □ A T A S H E C O R P O R A T I O N RF/Microwave Fiberoptic Module/Transmitter/Plug-in 10 GHz 1550 nm DFB LASER Product Description Hi e Ortel Model 1741A Laser Module contains a 10 GHz Distributed-Feedback DFB Laser designed for analog microwave transmission over

LSC2110

Abstract: LSC4110 LSCX110
Contextual Info: 1 mW 14 Pin DIL Cooled Laser Modules Technical Data LSCX110 Features Description • 1 Milliwatt Optical Output at 25 mA above Threshold, 25°C • Center Wavelength between 1280 nm and 1330 nm • Wide Modulation Bandwidth: LSC2110 - 800 MHz LSC4110 - 1.2 GHz

Contextual Info: HFE4083-322 High Speed VCSEL FEATURES • Designed for drive currents between 5 and 15 mA • Optimized for low dependence of electrical properties over temperature • High speed s1 GHz • Two different laser/photodiode polarities • Packaged with a photodetector

Contextual Info: HFE4084-322 High Speed VCSEL FEATURES • • Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature • High speed a1 GHz • Two different laser/photodiode polarities • Packaged with a photodetector

Ea 1530A

Abstract: 1530A Fabry-Perot-Laser-Diode B331 analog laser diode 6 GHz 2 Wavelength Laser Diode laser diode 6 GHz
Contextual Info: l O D A TA S H E E T 1530A 10 GHz LASER MODULE R T E i : C O R P O R A T I O N with OPTICAL ISOLATOR • Built-in Optical Isolator • Designed for Analog Transmission • Reduced Sensitivity to Optical Reflections • High Laser-Fiber Coupling Efficiency for Low Link Loss

Contextual Info: ETX 75FJ-SLR60 60 dB Optical Return Loss InGaAs PIN Photodiode Module Preliminary Specifications Features • ■ ■ ■ ■ Low back reflection at 1300 and 1550 nm High responsivity at 1300 and 1550 nm Bandwidth greater than 1 GHz Rugged coaxial package

Contextual Info: HFE4384-322 Connectorized High Speed VCSEL FEATURES • Designed for drive currents between 5 and 15 mA • Prealigned SC Connector sleeve • Optimized for low dependence of electrical properties over temperature • High speed ¿1 GHz • Two different laser/photodiode polarities

Contextual Info: DATA SHEET 850NM SINGLE MODE VCSEL TO-46 PACKAGE HFE4093-332 FEATURES: Designed for drive currents between 1 and 5 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating also

SWLA

Contextual Info: HFE4082-321 High Speed VCSEL FEATURES • Designed for drive currents between 5 and 15 mA • Optimized for low dependence of electrical properties over temperature • High speed a 1 GHz • Two different laser/photodiode polarities • Packaged with a photodetector

Contextual Info: Your GaAs IC Source 1 r- • a ■:- ŸfS Advanced Product Information 2.4 GHz TRANSIMPEDANCE AMPLIFIER Features: A p p lic a tio n s : o 2500 Ohm transresistance* o long haul com m unications o 0-2.4 GHz analog bandwidth o high speed broadband vid eo o 3.0 Gbit/sec NRZ operation

Contextual Info: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 PACKAGE HFE408X-322 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating also

Contextual Info: DATA SHEET 1.25GBPS 850NM VCSEL TO-46 PACKAGE HFE408X-321 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating

Contextual Info: HFE4383-322 Connectorized High Speed VCSEL FEATURES • • • Designed for drive currents between 5 and 15 mA Prealigned SC Connector sleeve Optimized for low dependence of electrical properties over temperature • • • High speed ¿1 GHz Two different laser/photodiode polarities