Untitled
Abstract: No abstract text available
Text: APT40M35PVR 400V 89A 0.035Ω POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also
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APT40M35PVR
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Untitled
Abstract: No abstract text available
Text: APT40M35PVR 400V W 89A 0.035W POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also
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APT40M35PVR
Repetitive14
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LG 57A
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y APT40M70LVR 400V 57A 0.070« ' POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT40M70LVR
O-264
MIL-STD-750
O-264AA
LG 57A
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Untitled
Abstract: No abstract text available
Text: APT4014BVR A DVAN CED P o w er Te c h n o lo g y ' 400V 28A 0.140Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT4014BVR
O-247
APT4014BVR
IL-STD-750
O-247AD
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Untitled
Abstract: No abstract text available
Text: APT4014BVR A dvanced P o w er Te c h n o l o g y 400V 28A 0.140£! POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT4014BVR
O-247
MIL-STD-750
O-247AD
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Untitled
Abstract: No abstract text available
Text: • R A dvanced W .\A p o w e r Te c h n o lo g y " APT4016BVR 400v 27a 0.160q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT4016BVR
O-247
APT4016BVR
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Untitled
Abstract: No abstract text available
Text: • R A dvanced W .\A p o w e r Te c h n o lo g y " APT4012BVR 400v 37a 0.120Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT4012BVR
O-247
APT4012BVR
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Untitled
Abstract: No abstract text available
Text: APT4018HVR A dvanced W.\A p o w e r Te c h n o lo g y “ • R 400v 22A 0.180Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT4018HVR
O-258
IL-STD-750
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2SK2057
Abstract: transister toshiba diode 3D bs10a 024q
Text: TOSHIBA Discrete Semiconductors 2SK2057 Field Effect Transistor Industrial A p p lica tio n s Unit in m m Silicon N Channel MOS Type c-MOS IV High Speed, High Current Switching Applications Fea tu res • Low Drain-Source ON Resistance ' r DS(ON) = 0.24Q (Typ.)
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2SK2057
2SK2057
transister
toshiba diode 3D
bs10a
024q
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LG 57A
Abstract: No abstract text available
Text: APT40M70LVR • R A dvanced W .\A p o w e r Te c h n o lo g y " 400v 57 a 0 .070q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT40M70LVR
O-264
LG 57A
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Untitled
Abstract: No abstract text available
Text: APT40M70JVR • R A dvanced W 'æ p o w e r Te c h n o l o g y ' 400v 53a 0.070q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT40M70JVR
OT-227
E145592
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C2073
Abstract: No abstract text available
Text: A d van ced W /Æ PO W ER Te c h n o l o g y • R A P T4015AVR 400v 25.5A 0.1 son POWER MOS V' Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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T4015AVR
APT4015AVR
00A/ps)
IL-STD-750
C2073
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APT4020BVR
Abstract: No abstract text available
Text: APT4020BVR • R A dvanced W .\A p o w e r Te c h n o l o g y “ 400v 23a 0.200Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT4020BVR
O-247
APT4020BVR
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2SK766
Abstract: No abstract text available
Text: Power F-MOS FET 2SK766 2SK766 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance RM on : R OT (01 2 .4 0 (ty p .) Unit mm • High switching rate : U=35ns (ly p .) o J_Q 2mu _ *• - 5 7wn • No secondary breakdown
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2SK766
Tc-25t
O-22U
VW-20V.
VGS-10V.
2SK766
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MOS Controlled Thyristor
Abstract: TA49226
Text: HX A R R IS MCT3A65P100F2, MCT3D65P100F2 Semiconductor 'NnV' 0 lo<*6'N April 1999 65A, 1000V, P-Type MOS-Controlled Thyristor (MCT p *0 Description Features 65A, -1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an
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MCT3A65P100F2,
MCT3D65P100F2
-1000V
000A/|
MOS Controlled Thyristor
TA49226
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SGSP474
Abstract: SEFH7N45
Text: ^ B S 3 S G S-THOMSON G7E D 73C 17558 _ T I I p i N-CHANNEL POWER MOS TRANSISTORS H IG H SPEED S W IT C H IN G A P P L IC A T IO N S These products are diffused multi^celi silicon gate N-Channe! enhancement mode Power-Mos field effect transistors. B 9 7^153?
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SEFH7N45/SEFM7N45
SEFH8N35/SEFH8N35
SEFH8N40/SEFM8H40
SGSP474
C-283
0D100b4
SEFH7N45/SEFM7N45
SEFH8N35/SEFM8N35
SEFH8N40/SEFM8N40
C-284
SEFH7N45
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660 tg diode
Abstract: No abstract text available
Text: • R A PT40 M82WV R A d va n ce d W /Æ P o w er Te c h n o l o g y 400v 44a 0.082n POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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M82WV
O-267
APT40M82W
00A/ps)
IL-STD-750
660 tg diode
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2SK769
Abstract: No abstract text available
Text: P o w er F-MOS FET 2SK769 2SK769 Silicon N-channel Power F-MOS FET • Package D im ensions ■ Features • L ow O N r e s is ta n c e Rui on : R Ds (on) = 0 ,6 5 il (ty p .) Unit: mm • H igh sw itch in g r a te : t f = 9 0 n s (ty p .) 5.2max 15 5max
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2SK769
VDO-150V
Tc-25C
G0170Ã
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2SK1377
Abstract: 10R1B
Text: 2SK1377 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E tt-MOS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 1Û3MAX. 0 1 2 ± d 2 /- FEATURES:
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2SK1377
2SK1377
10R1B
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Untitled
Abstract: No abstract text available
Text: APT40M35JVR A dvanced P o w er Te c h n o l o g y 400V 93A 0.035Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT40M35JVR
OT-227
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Untitled
Abstract: No abstract text available
Text: APT40M70JVR A dvanced P o w er Te c h n o lo g y 400V 53A 0.070Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT40M70JVR
OT-227
E145592
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Untitled
Abstract: No abstract text available
Text: APT40M35JVR A dvanced P o w er Te c h n o lo g y 400V 93A 0.035Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT40M35JVR
OT-227
APT40M35JVR
MIL-STD-750
832nH.
OT-227
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1119 Field Effect Transistor In d u s tria l A p p lic a tio n s U n it in m m Silicon N Channel MOS Type n-MOS II >3.6 ± 0 . 2 1 0 .3 M AX High Speed, High Current DC-DC Converter, w \ Relay Drive and Motor Drive Applications F e a tu re s X
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2SK1119
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK945 Field Effect Transistor Silicon N Channel MOS Type c-MOS II High Speed, High Current Switching, DC-DC Converter, Chopper Regulator and Motor Drive Applications Features • Low Drain-Source ON Resistance ' R d s (O N ) = 3 - 6 ^ (T y P -)
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2SK945
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