P-MOSFET 8 PINS Search Results

Contextual Info: Si6441DQ New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.015 @ VGS = - 10 V -8 0.024 @ VGS = - 4.5 V - 6.4 APPLICATIONS D Battery Switch D Load Switch S* TSSOP-8

2U 73 diode

Abstract: siliconix
Contextual Info: SÌ6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SU M M AR v V d s CV) RDS(OM) (ß ) Id là) 0,019 @ VGS = - 1 0 V ±6.5 0.030 @ V gs = -4 .5 V ±5.2 -3 0 S* P TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. Top View ò D P-Channel MOSFET

Si6441DQ

Abstract: Si6441DQ-T1
Contextual Info: Si6441DQ New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.015 @ VGS = - 10 V -8 0.024 @ VGS = - 4.5 V - 6.4 APPLICATIONS D Battery Switch D Load Switch S* TSSOP-8

Contextual Info: Si4505DY Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A)

Contextual Info: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si4505DY Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A)

Contextual Info: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

858P

Abstract: F63TNR FDR858P SOIC-16
Contextual Info: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little

858P

Abstract: P-Channel Logic Level PowerTrenchTM MOSFET FDR858P SOIC-16 Single P-Channel, Logic Level, PowerTrench MOSFET
Contextual Info: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little

Contextual Info: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little

Contextual Info: New Product Si1315DL Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) -8 RDS(on) ()

SI1315DL

Abstract: lj marking
Contextual Info: New Product Si1315DL Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) -8 RDS(on) ()

Contextual Info: New Product Si1315DL Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) -8 RDS(on) ()

Contextual Info: Si3421DV Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) () Max. ID (A)d,e 0.0192 at VGS = -10 V -8 0.0232 at VGS = -6 V -8 0.0270 at VGS = -4.5 V -8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:

Si6459BDQ

Abstract: Si6459BDQ-T1
Contextual Info: Si6459BDQ Vishay Siliconix New Product P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) −60 60 FEATURES rDS(on) (W) ID (A) 0.115 @ VGS = −10 V −2.7 0.150 @ VGS = −4.5 V −2.4 D TrenchFETr Power MOSFET S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S D * Source Pins 2, 3, 6 and 7

Si6459BDQ

Abstract: Si6459BDQ-T1 32220
Contextual Info: Si6459BDQ Vishay Siliconix New Product P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) −60 60 FEATURES rDS(on) (W) ID (A) 0.115 @ VGS = −10 V −2.7 0.150 @ VGS = −4.5 V −2.4 D TrenchFETr Power MOSFET S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S D * Source Pins 2, 3, 6 and 7

Single P-Channel, Logic Level, PowerTrench MOSFET

Abstract: P-Channel Logic Level PowerTrenchTM MOSFET F63TNR F852 FDR8308P SOIC-16
Contextual Info: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.

FDR8308P

Abstract: SOIC-16
Contextual Info: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.

Contextual Info: SÌ6463DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY V o s <VJ Rd S<ON| (3 ) >d (A) 0.020 @ VGS = -4 .5 V ±6.5 0.030 @ VGS = -2.5 V ±5.2 e 't'V ' A -20 s* Q TSSOP-8 O il Source Pins 2, 3 ,6 and 7 must be tied common. It Top View Ô D P-Channel MOSFET

F63TNR

Abstract: F852 FDR8308P SOIC-16 SSOT-8
Contextual Info: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.

Contextual Info: Si3417DV Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)d,e 0.0252 at VGS = - 10 V -8 0.0360 at VGS = - 4.5 V -8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:

Schottky Diode 40V 6A

Abstract: CBVK741B019 F011 F63TNR F852 FDFS2P102 FDS9953A L86Z
Contextual Info: FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General Description Features The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

FDFS2P102

Contextual Info: FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General Description Features The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.