P-MOSFET CATALOG Search Results
P-MOSFET CATALOG Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK422G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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P-MOSFET CATALOG Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
MCH3314
Abstract: SCH2805
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Original |
SCH2805 ENN7760 MCH3314) SB0105) MCH3314 SCH2805 | |
CPH3309
Abstract: CPH5835 MCH5835 SBS010M
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Original |
CPH5835 ENN8207 CPH3309) SBS010M) CPH3309 CPH5835 MCH5835 SBS010M | |
MCH3339
Abstract: MCH5823 SS10015M
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Original |
MCH5823 ENN7757 MCH3339) SS10015M) MCH3339 MCH5823 SS10015M | |
CPH5802Contextual Info: Ordering number : ENN6899 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions Features • Composite type with a P-Channel Sillicon MOSFET M CH3306 and a Schottky Barrier Diode (SBS004) |
OCR Scan |
ENN6899 CPH5802 CH3306) SBS004) CPH5802] | |
ENN8206
Abstract: CPH5810 MCH3312
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Original |
CPH5810 ENN8206 MCH3312) SBS001) ENN8206 CPH5810 MCH3312 | |
7447
Abstract: CPH5818 MCH3339 SBS007M
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Original |
ENN7447 CPH5818 MCH3339) SBS007M) CPH5818] 7447 CPH5818 MCH3339 SBS007M | |
a04466
Abstract: a0446
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Original |
ENA0446 SCH2809 SCH1305) SBS018) A0446-6/6 a04466 a0446 | |
86886
Abstract: diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001
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Original |
CPH5846 EN8688 MCH3309) SS10015M) 86886 diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001 | |
7447
Abstract: CPH5818 MCH3339 SBS007M
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Original |
ENN7447 CPH5818 MCH3339) SBS007M) CPH5818] 7447 CPH5818 MCH3339 SBS007M | |
diode N1004
Abstract: N1004 diode CPH5812 n1004 TA-3787 MCH3317 SBS010M N2603
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Original |
CPH5812 EN7467B MCH3317) SBS010M) diode N1004 N1004 diode CPH5812 n1004 TA-3787 MCH3317 SBS010M N2603 | |
CPH5807
Abstract: MCH3309 SBS004
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Original |
CPH5807 EN7751B MCH3309) SBS004) CPH5807 MCH3309 SBS004 | |
7382
Abstract: CPH5820 D2503 MCH3308 SBS006M
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Original |
ENN7382 CPH5820 MCH3308) SBS006M) CPH5820] 7382 CPH5820 D2503 MCH3308 SBS006M | |
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Contextual Info: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171 |
Original |
ENN6980 CPH5804 MCH3312) SBS006M) CPH5804] | |
TA-3176
Abstract: marking QB MCH3308 MCH5802 SBS006M
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Original |
ENN6961 MCH5802 MCH3308) SBS006M) MCH5802] TA-3176 marking QB MCH3308 MCH5802 SBS006M | |
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CPH5807
Abstract: MCH3309 SBS004
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Original |
CPH5807 ENN7751 MCH3309) SBS004) CPH5807 MCH3309 SBS004 | |
MCH3312
Abstract: CPH5854 SB1003M3 A05166 marking YG
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Original |
CPH5854 ENA0516 MCH3312) SB1003M3) A0516-6/6 MCH3312 CPH5854 SB1003M3 A05166 marking YG | |
a2165Contextual Info: MCH5839 Ordering number : ENA2165 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5839 General-Purpose Switching Device Applications Features • • • • Composite type with an P-channel silicon MOSFET and a schottky barrier diode |
Original |
ENA2165 MCH5839 A2165-7/7 a2165 | |
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Contextual Info: Ordering number: ENN6980 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 /SANYO, DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171 |
OCR Scan |
ENN6980 CPH5804 MCH3312) SBS006M) CPH5804] | |
diode N1004
Abstract: CPH5822 MCH3312 N1004 SBS010M
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Original |
CPH5822 ENN7702A MCH3312) SBS010M) diode N1004 CPH5822 MCH3312 N1004 SBS010M | |
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Contextual Info: SCH2811 Ordering number : ENA0440 SCH2811 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package |
Original |
ENA0440 SCH2811 A0440-6/6 | |
SCH2810Contextual Info: SCH2810 Ordering number : ENN8246 SCH2810 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package |
Original |
SCH2810 ENN8246 SCH2810 | |
MCH3307
Abstract: SBS004 ENN8235 2171A
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Original |
CPH5838 ENN8235 MCH3307) SBS004) MCH3307 SBS004 ENN8235 2171A | |
VEC2803Contextual Info: VEC2803 Ordering number : ENN8202 VEC2803 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features DC/DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package |
Original |
VEC2803 ENN8202 VEC2803 | |
ic 74243
Abstract: MCH3317 MCH5815 SBS007M TA-3841
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Original |
ENN7424 MCH5815 MCH5815] MCH3317) SBS007M) ic 74243 MCH3317 MCH5815 SBS007M TA-3841 | |