STW6NA90
Abstract: sd 50 diode
Text: STW6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW6NA90 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STW6NA90
100oC
O-247
STW6NA90
sd 50 diode
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id 0835
Abstract: STW8NB90 STH8NB90FI
Text: STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW8NB90 900 V < 1.45 Ω 8A STH8NB90FI 900 V < 1.45 Ω 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STW8NB90
STH8NB90FI
O-247/ISOWATT218
id 0835
STW8NB90
STH8NB90FI
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STH13NB60FI
Abstract: STW13NB60
Text: STW13NB60 STH13NB60FI N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218 PowerMESH MOSFET TYPE V DSS R DS on ID STW13NB60 STH13NB60FI 600 V 600 V <0.54 Ω <0.54 Ω 13 A 8.6 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STW13NB60
STH13NB60FI
O-247/ISOWATT218
STH13NB60FI
STW13NB60
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STH16NA40FI
Abstract: STW16NA40
Text: STW16NA40 STH16NA40FI N - CHANNEL 400V - 0.21Ω - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID STW16NA40 STH16NA40FI 400 V 400V < 0.3 Ω < 0.3 Ω 16 A 10 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.21 Ω AVALANCHE RUGGED TECHNOLOGY
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STW16NA40
STH16NA40FI
O-247/ISOWATT218
100oC
O-247
ISOWATT218
STH16NA40FI
STW16NA40
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STW20NB50
Abstract: No abstract text available
Text: STW20NB50 N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE STW20NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.25 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STW20NB50
O-247
100oC
STW20NB50
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STW9NB90
Abstract: No abstract text available
Text: STW9NB90 N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH MOSFET TYPE STW9NB90 • ■ ■ ■ ■ ■ V DSS R DS on ID 900 V <1Ω 9.7 A TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STW9NB90
O-247
STW9NB90
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STW11NB80
Abstract: T0-247
Text: STW11NB80 N-CHANNEL 800V - 0.65Ω - 11A - T0-247 PowerMESH MOSFET TYPE STW11NB80 • ■ ■ ■ ■ ■ V DSS 800 V R DS on < 0.8 Ω ID 11 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STW11NB80
T0-247
STW11NB80
T0-247
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STW12NC60
Abstract: diode F4 6A
Text: STW12NC60 N-CHANNEL 600V - 0.48Ω - 12A TO-247 PowerMesh II MOSFET TYPE STW12NC60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.55Ω 12 A TYPICAL RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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STW12NC60
O-247
STW12NC60
diode F4 6A
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H8NA80FI
Abstract: 8NA80 STH8NA80FI STW8NA80
Text: STW8NA80 STH8NA80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STW 8NA80 STH8NA80F I • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 1.50 Ω < 1.50 Ω 7.2 A 4.5 A TYPICAL RDS(on) = 1.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING
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STW8NA80
STH8NA80FI
8NA80
STH8NA80F
100oC
H8NA80FI
8NA80
STH8NA80FI
STW8NA80
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P8NK80ZFP
Abstract: w8nk80z P8NK80 p8nk80z p8nk p8nk8 L9 Zener STW8NK80Z STP8NK80Z STP8NK80ZFP
Text: STP8NK80Z - STP8NK80ZFP STW8NK80Z N-CHANNEL 800V - 1.3Ω - 6.2A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP8NK80Z STP8NK80ZFP STW8NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V 800 V 800 V < 1.5 Ω < 1.5 Ω < 1.5 Ω
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STP8NK80Z
STP8NK80ZFP
STW8NK80Z
O-220/TO-220FP/TO-247
STP8NK80Z
O-220
O-220FP
O-247
P8NK80ZFP
w8nk80z
P8NK80
p8nk80z
p8nk
p8nk8
L9 Zener
STW8NK80Z
STP8NK80ZFP
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9NB80
Abstract: STW9NB80
Text: STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247 PowerMESH MOSFET TYPE STW 9NB80 • ■ ■ ■ ■ ■ V DSS R DS on ID 800 V <1Ω 9.3 A TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STW9NB80
O-247
9NB80
9NB80
STW9NB80
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COIL CLAMPING DIODE
Abstract: VB927 VB927FI High voltage ignition coil driver car ignition coil Driver car ignition circuit diagram ICL 2025
Text: VB927 VB927FI HIGH VOLTAGE IGNITION COIL DRIVER POWER IC • ■ ■ ■ NO EXTERNAL COMPONENT REQUIRED INTEGRATED HIGH VOLTAGE CLAMP COIL CURRENT LIMIT INTERNALLY SET HIGH RUGGEDNESS DESCRIPTION The VB927 is a monolithic high voltage integrated circuit made using STM VIPower Technology,
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VB927
VB927FI
VB927
O-247
COIL CLAMPING DIODE
VB927FI
High voltage ignition coil driver
car ignition coil Driver
car ignition circuit diagram
ICL 2025
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Untitled
Abstract: No abstract text available
Text: STW14NM50 N-CHANNEL 500V - 0.32Ω - 14A TO-247 MDmesh Power MOSFET PRELIMINARY DATA TYPE STW14NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.35Ω 14 A TYPICAL RDS(on) = 0.32Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
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STW14NM50
O-247
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marking A36A
Abstract: STP36NF06
Text: STP36NF06 STP36NF06FP N-CHANNEL 60V - 0.032 Ω - 30A TO-220/TO-220FP STripFET II POWER MOSFET TYPE STP36NF06 STP36NF06FP • ■ ■ ■ VDSS RDS on ID 60 V 60 V <0.040 Ω <0.040 Ω 30 A 18 A(*) TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY
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STP36NF06
STP36NF06FP
O-220/TO-220FP
O-220
O-220FP
marking A36A
STP36NF06
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IRFP250
Abstract: irfp250 applications irfp250 mosfet NOR gate
Text: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 • ■ ■ ■ ■ VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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IRFP250
O-247
IRFP250
irfp250 applications
irfp250 mosfet
NOR gate
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BUF420AW
Abstract: No abstract text available
Text: BUF420AW HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS APPLICATIONS:
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BUF420AW
BUF420AW
O-247
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12v 100w AUDIO AMPLIFIER CIRCUIT DIAGRAM
Abstract: 2STW1695 2STW4468 JESD97 70w amplifier
Text: 2STW1695 High power PNP epitaxial planar bipolar transistor General features • High breakdown voltage VCEO = -140V ■ Complementary to 2STW4468 ■ Typical ft =20MHz ■ Fully characterized at 125 oC ■ In compliance with the 2002/93/EC European Directive
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2STW1695
-140V
2STW4468
20MHz
2002/93/EC
O-247
12v 100w AUDIO AMPLIFIER CIRCUIT DIAGRAM
2STW1695
2STW4468
JESD97
70w amplifier
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Untitled
Abstract: No abstract text available
Text: VB922 HIGH VOLTAGE IGNITION COIL DRIVER POWER 1C . . . . NO EXTERNAL COMPONENT REQUIRED INTEGRATED HIGH VOLTAGE CLAMP COIL CURRENT LIMIT INTERNALLY SET HIGH RUGGEDNESS DESCRIPTION The VB922 is a monolithic high voltage integrated circuits made using STMicroelectronics VIPower
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VB922
VB922
SC09550
O-247
P025P
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STW5NA90 STH5NA90FI N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTORS PRELIMINARY DATA TYP E V STW 5N A90 S TH 5N A90FI dss 900 V 900 V R d S ( o ii ) < 2.5 Q. < 2.5 Q. Id 5.3 A 3.5 A • TYPICAL RüS(on) =2.1 £2
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STW5NA90
STH5NA90FI
A90FI
P025C
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Untitled
Abstract: No abstract text available
Text: STW7NA90 STH7NA90FI N - CHANNEL 900V - 1 ,05£2 - 7 A - TO-247/ISOWATT218 _ FAST POWER MOS TRANSISTORS PRELIMINARY DATA TYPE S TW 7N A90 STH7N A90FI V dss RDS on Id 900 V 900 V < 1.3 a < 1.3 a 7 A 4 .7 A TYPICAL R D S (on) = 1 .05 Î2 . ± 30V GATE TO SOURCE VOLTAGE RATING
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STW7NA90
STH7NA90FI
O-247/ISOWATT218
A90FI
ATT218
P025C
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Untitled
Abstract: No abstract text available
Text: Æ T S G S - T H O M S O N n lsi S IIL[iCTISÎ iD©S BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATIONS: . MOTOR CONTROL . HIGH FREQUENCY AND EFFICIENCY CONVERTERS DESCRIPTION High current, high speed transistor suited for
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BUTW92
P025P
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Untitled
Abstract: No abstract text available
Text: IRFP450 N - CHANNEL 500V - 0.33Í2 - 14A - TO-247 PowerMESH MOSFET TYPE IR F P 4 5 0 V R d s s 500 V d Id S o ii < 0.4 Q. 14 A • TYPICAL RDS(on) = 0.33 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED
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IRFP450
O-247
P025P
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Untitled
Abstract: No abstract text available
Text: STW9NB80 N - CHANNEL 900V - 0.85ft - 9.3A - TO-247 _ PowerMESH MOSFET ADVANCE DATA V dss TYPE STW 9N B80 • . . . . 800 V R D S o n < 1 .1 a Id 9.3 A TYPICAL RDS(on) = 0.85 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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STW9NB80
O-247
O-247
P025P
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Untitled
Abstract: No abstract text available
Text: STW5NB100 N - CHANNEL 1000V - 4Î2 - 4.3A - TO-247 PowerMESH MOSFET PRELIMINARY DATA TYPE STW5NB1 00 • . . . . . . V dss R dS oii Id 1000 v < 4.4 a 4.3 A TYPICAL R D S (on) = 4 EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STW5NB100
O-247
O-247
P025P
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