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P04A
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National Semiconductor
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4 Lead Molded TO-202 |
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JMTP440P04A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTP440P04A in SOP-8 package, rated for -40V drain-source voltage, -6A continuous current, with RDS(ON) less than 38mΩ at VGS = -10V and low gate charge. |
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JMTP520P04A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel enhancement mode power MOSFET with -40V drain-source voltage, -5.5A continuous drain current, and RDS(on) less than 51mΩ at VGS=-10V, available in SOP-8 package. |
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JMTL850P04A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET with -40V drain-source voltage, -5A continuous drain current, and RDS(on) less than 88mΩ at VGS=-10V, available in SOT-23 package. |
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JMTP130P04A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel enhancement mode power MOSFET with -40V drain-source voltage, -12A continuous drain current, and low on-resistance of 14.3mΩ at VGS=-10V, housed in SOP-8 package. |
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JMTP850P04A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET with -40V drain-source voltage, -5A continuous drain current, 85 mΩ typical RDS(on) at VGS = -10V, and low gate charge, suitable for PWM, load switch, and power management applications. |
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JMTM850P04A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTM850P04A with -40V drain-source voltage, -5A continuous drain current, and RDS(on) less than 85mΩ at VGS=-10V in SOT-23-6L package. |
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JMTG130P04A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel enhancement mode power MOSFET with -40V drain-source voltage, -35A continuous drain current, and RDS(on) less than 12.5mΩ at VGS=-10V, available in PDFN5x6-8L package. |
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JMTK130P04A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTK130P04A with -40V drain-source voltage, -40A continuous drain current, and RDS(on) less than 13mΩ at VGS=-10V in TO-252-3L package. |
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JMTC085P04A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTC085P04A with -40V drain-source voltage, -70A continuous drain current, and RDS(on) less than 10mΩ at VGS=-10V, featuring advanced trench technology for high efficiency power management applications. |
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JMTK085P04A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel enhancement mode power MOSFET with -40V drain-source voltage, -70A continuous drain current, and RDS(on) less than 9.2mΩ at VGS=-10V, available in TO-252-3L package. |
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JMTQ130P04A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel enhancement mode power MOSFET with -40V drain-source voltage, -30A continuous drain current, and RDS(on) less than 13mΩ at VGS=-10V, available in PDFN3x3-8L package. |
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CJU40P04A
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JCET Group
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P-Channel Power MOSFET CJU40P04A in TO-252-2L package featuring -40V drain-source voltage, -40A continuous drain current, and 15mΩ typical RDS(on) at VGS=-10V, designed for power management and battery-powered systems. |
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JMTK440P04A
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Jiangsu JieJie Microelectronics Co Ltd
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JMTK440P04A P-channel enhancement mode power MOSFET with -40V drain-source voltage, -10A continuous drain current, 39mΩ RDS(ON) at VGS = -10V, and TO-252-3L package. |
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JMTQ440P04A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTQ440P04A with -40V drain-to-source voltage, -8A continuous drain current, and RDS(ON) less than 36mΩ at VGS = -10V, housed in a PDFN3x3-8L package. |
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JMTP440P04A
