P1* RF Search Results

DDS-60

Abstract: UA78M05 AD9851 DDS-60 Rev A C1315 c1515 c1247 AD8008 c14 c13
Contextual Info: +5 out P1-4 +5V R13 10 K DATA 25 26 27 28 1 2 3 4 P1-3 +5V +5V R15 10 K LOAD P1-1 8 D7 D6 D5 D4 D3 D2 D1 D0 VDD VDD VDD VDD VINP VINN FQ_UD +5V R14 10 K CLOCK P1-2 B IOUT 7 W_CLK 14 (4) U4 Reference Oscillator 8 (3) 7 (2) n.c. 9 17 22 "+5V" C17 0.1 C18 0.1

V23026-A1001-B201

Abstract: V23026-A1004-B201 V23026A1002B201 tyco relay axicom v23026-a1001-b201 GR-1089 V23026 V23026-D1025-B20 V23026A1005B201 V23026A1006B201
Contextual Info: AXICOM Telecom-, Signal and RF Relays P1 V23026 Relay 108-98009 • Nov. 07 Rev. E • ECOC: JM10 AXICOM 108-98009 Rev. E Telecom-, Signal and RF Relays P1 V23026 Relay Disclaimer While Tyco Electronics has made every reasonable effort to ensure the accuracy of the information in this datasheet,

AXICOM V23026

Abstract: AXICOM Relay v23026 V23026-A1001-B201 V23026-A1002-B201 V23026-B1101-B201 AXICOM Relay 1393776-3 V23026A1001B201 AXICOM V23026-B1102-B201 1393774-8
Contextual Info: AXICOM Telecom-, Signal and RF Relays P1 V23026 Relay 108-98009 • Aug. 08 Rev. F • ECOC: JM10 AXICOM 108-98009 Rev. F Telecom-, Signal and RF Relays P1 V23026 Relay Disclaimer While Tyco Electronics has made every reasonable effort to ensure the accuracy of the information in this datasheet,

V23026-E

Abstract: V23026-C1052-B201 V23026-A1001-B201
Contextual Info: AXICOM Telecom-, Signal and RF Relays P1 V23026 Relay 108-98009 • Apr. 10 Rev. G • ECOC: JM10 AXICOM 108-98009 Rev. G Telecom-, Signal and RF Relays P1 V23026 Relay Disclaimer While Tyco Electronics has made every reasonable effort to ensure the accuracy of the information in this datasheet,

DSWM9073

Abstract: MIL-W-22759 osp 75 J18-J25 transistor j50 J26-J49 J50-J57 UNC-2B
Contextual Info: F E AT U R E S MODEL NO. DSWM9073 1 - 1200 MHz 2 dB Insertion Loss +80 dBm IP2 Amplitude/Phase Balanced HDI Switch Assembly, RF 8 Channel PROTECTIVE SLEEVING 13.50/12.50 WIRE PER MIL-W-22759/33 SEE CHART FOR P1 FROM BUNDLE WITH TIE CORD ONLY 20 10 P1 102387-4 (AMP)

asme angle in table

Abstract: part 1 date sheet 2012 asme y14.100-2004 1002004 Y1410
Contextual Info: 4 3 DWG NO. SH 088-00305 1 REV OF 1 P1 1 REVISIONS NOTES: 1. 2. PIN TABLE PIN 3 RF IN PIN 8 RF OUT PIN 10 DC ALL OTHER GROUND CASE GROUND MATERIAL: KOVAR FINISH: NICKEL/GOLD ECN REV. DESCRIPTION CHNG/DATE - P1 PRELIMINARY RELEASE 2012/05/14 APPVD/DATE CAUTION

25RSK120

Abstract: 07104
Contextual Info: MITSUBISHI INTELLIGENT POWER MODULES PM25RSK120 FLAT-BASE TYPE INSULATED PACKAGE 1 vupc 14VN 1 2 UFO 15 BM 3 UP 16 UN 4VU P1 17VN 5 VVPC 18 W N 6V FO 19 FO 7 VP 20 P 8 V V P1 21 B R 9 VW PC 22 N 10 W FO 23 U 11 W P 24 V 12VW P1 25 W 13VN C Description: M itsubishi Intelligent Pow er M od­

G345

Abstract: 4 bit binary full adder and subtractor ripple borrow subtractor 4 bit binary full and subtractor P345 full subtractor P-345 Z911
Contextual Info: Adder and Subtractor Macros in ispDS and ispDS+ TM TM c4 = g3 + p3 . c3 = g3 + p3 g2 + p2 . g1 + p2 . p1 . g0 + p2. p1 . p0 . c0 Carry-Lookahead Adders Arithmetic logic blocks, such as adders and subtractors, are increasingly becoming performance bottlenecks in

4 bit binary full adder and subtractor

Abstract: P345 8 bit subtractor 8 bit adder and subtractor
Contextual Info: Adder and Subtractor Macros in pDS and pDS+i® c4 = g3 + p3 . c3 = g3 + p3 g2 + p2 . g1 + p2 . p1 . g0 + p2. p1 . p0 . c0 Carry-Lookahead Adders Arithmetic logic blocks, such as adders and subtractors, are increasingly becoming performance bottlenecks in

transistor s11 s12 s21 s22

Contextual Info: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic

AXICOM Relay v23026

Abstract: s1 spdt changeover switch V23026A1001B201 GR-1089 V23026 V23026A1002B201 V23026A1006B201 V23026-B1101-B201 v23031
Contextual Info: The Best Relaytion P1 Relay ISO 9001 P1 Relay V23026 1 pole telecom and signal relay, polarized, Through Hole Type THT or Surface Mount Technology (SMT), Relay types: non-latching with 1 coil latching with 2 coils latching with 1 coil Features – Directly triggerable with TTL standard modules such

0-1393776-3

Abstract: AXICOM V23026 1393776-3 V23026A1001B201 V23026 1393776-9 AXICOM Relay HF3 1393776-7 AXICOM Relay v23026 s1 spdt changeover switch
Contextual Info: The Best Relaytion P1 Relay ISO 9001 108-98009 Rev. C EC-JM00-0009-03 ECOC: JM10 1. Aug. 04 P1 Relay V23026 1 pole telecom and signal relay, polarized, Through Hole Type THT or Surface Mount Technology (SMT), Relay types: non-latching with 1 coil latching with 2 coils

AT-64023

Abstract: S21E
Contextual Info: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic

V23026-D1021-B201

Abstract: V23026-B1102-B201 AXICOM V23026 AXICOM Relay v23026 V23026A1001B201 V23026-A1001-B201 V23031 0-1393776-3 s1 spdt changeover switch GR-1089
Contextual Info: The Best Relaytion P1 Relay ISO 9001 P1 Relay V23026 1 pole telecom and signal relay, polarized, Through Hole Type THT or Surface Mount Technology (SMT), Relay types: non-latching with 1 coil latching with 2 coils latching with 1 coil Features – Directly triggerable with TTL standard modules such

AT-64020

Abstract: 200 mil BeO package
Contextual Info: Agilent AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz Description The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic

Contextual Info: Agilent AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz Description The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic

10D-13

Contextual Info: REVISION AND CHANGE EFFECTIVITï D DESCRIPTION X Meters IM I in o r— 00 Ì I - 6 I REF- - STRAIN RELIEF PART HIGH SPEED SIGNAL P1 PAD SIGNAL P2 PAD SIGNAL P1 PAD SIGNAL P2 PAD SIGNAL A2 Tx1 C2 Rx1 p C2 Rx1 p A2 Tx 1p

AT-64020

Abstract: S21E
Contextual Info: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic

iec 60286-2

Abstract: roederstein capacitor Vishay Roederstein iec 60286-2 D
Contextual Info: Taping Specifications Vishay Roederstein Radial Plastic Film Capacitors according to IEC 60286-2 PCM 10/15 ∆h P P2 H H1 W2 W1 W d W D0 P1 PCM 22.5 P0 F F1 PCM 27.5 P0 Hot Sealing Adhesive Tape P1 ITEM DIMENSIONS in millimeters SYMBOL PCM 10.0 PCM 15.0

iec 60286-2

Abstract: Packing Quantities for Radial Capacitors in PCM 10 to 37.5mm
Contextual Info: Packaging Information Vishay Roederstein Radial Plastic Film Capacitors according to IEC 60286-2 PCM 10/15 ∆h P P2 H H1 W2 W1 W d W D0 P1 PCM 22.5 P0 F F1 PCM 27.5 P0 Hot Sealing Adhesive Tape P1 ITEM DIMENSIONS in millimeters SYMBOL PCM 10.0 PCM 15.0

AT64020

Abstract: AT-64020 S21E
Contextual Info: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic

AT-42000

Abstract: low noise amplifier ghz AT-42000-GP4 S21E 42000GP4
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz

Contextual Info: HOW TO ORDER CAPACITORS Aluminum Electrolytic - Leaded Taping & Packaging Specifications TAPING SPECIFICATION FOR RADIAL LEAD TYPE Fig. 1 P2 H P P1 H A H0 W1 l Adhesive Tape P0 P2 Fig. 3 P1 1.0 Max W2 fd F H0 t W1 W W0 W Base Tape fD0 l P0 fD0 Adhesive Tape

AT-64023

Abstract: S21E
Contextual Info: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic