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    P1 TRANSISTOR Search Results

    P1 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P1 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz Description Agilent’s AT-42036 is a general purpose NPN bipolar transistor that


    Original     		PDF AT-42036 5988-4735EN 5989-2653EN

    AT-42070

    Abstract: No abstract text available
    Text: Agilent AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz Description Agilent’s AT-42070 is a general purpose NPN bipolar transistor that


    Original     		PDF AT-42070 5966-4945E 5989-2654EN

    AT-42035

    Abstract: AT42035G AT-42035G
    Text: Agilent AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz Description Agilent’s AT-42035 is a general purpose NPN bipolar transistor that


    Original     		PDF AT-42035 5988-4734EN 5989-2652EN AT42035G AT-42035G

    transistor s11 s12 s21 s22

    Abstract: No abstract text available
    Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64023 AT-64023 5965-8916E transistor s11 s12 s21 s22

    AT-64023

    Abstract: S21E
    Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64023 AT-64023 5965-8916E S21E

    AT64020

    Abstract: AT-64020
    Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64020 AT-64020 5965-8915E AT64020

    AT-64020

    Abstract: 200 mil BeO package
    Text: Agilent AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz Description The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64020 5965-8915E 5989-2657EN 200 mil BeO package

    Untitled

    Abstract: No abstract text available
    Text: Agilent AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz Description The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64023 5965-8916E 5989-2658EN

    AT-64020

    Abstract: S21E
    Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64020 AT-64020 5965-8915E S21E

    AT64020

    Abstract: AT-64020 S21E
    Text: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64020 AT-64020 AT64020 S21E

    SX4009-P1

    Abstract: sx3009 EE-1005 EE-SX4009-P1 omron EE-SX4009-P1 sx4009p1
    Text: Photomicrosensor Transmissive EE-SX3009-P1/-SX4009-P1 • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • • • 34 171825-3 (Tyco Electronics AMP) 23±0.2 ■ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF EE-SX3009-P1/-SX4009-P1 X305-E-1 SX4009-P1 sx3009 EE-1005 EE-SX4009-P1 omron EE-SX4009-P1 sx4009p1

    AT-42000

    Abstract: low noise amplifier ghz AT-42000-GP4 S21E 42000GP4
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz


    Original     		PDF AT-42000 AT-42000 RN/50 low noise amplifier ghz AT-42000-GP4 S21E 42000GP4

    EE-SX3009-P1

    Abstract: 172142-3 RoHS EE-1005 EE-SX4009-P1 sx4009 Tyco amp terminal connectors
    Text: Photomicrosensor Transmissive EE-SX3009-P1/-SX4009-P1 • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • • • 34 171825-3 (Tyco Electronics AMP) 23±0.2 ■ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF EE-SX3009-P1/-SX4009-P1 EE-1005 UL1007 AWG24 EE-SX4009-P1/EE-SX3009-P1 EE-SX3009-P1 172142-3 RoHS EE-SX4009-P1 sx4009 Tyco amp terminal connectors

    Untitled

    Abstract: No abstract text available
    Text: Photo IC Output Photomicrosensor Transmissive EE-SX3157-P1/EE-SX4157E-P1 • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • • Through-beam Photomicrosensors with 5-mm slot. High resolution (aperture width: 0.5 mm).


    Original     		PDF EE-SX3157-P1/EE-SX4157E-P1 EE-SX4157E-P1) EE-SX3157-P1) E442-E1-01

    sx4009

    Abstract: omron EE-SX4009-P1 EE-1005 EE-SX4009-P1
    Text: Photomicrosensor Transmissive EE-SX3009-P1/-SX4009-P1 • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • • • 34 171825-3 (Tyco Electronics AMP) 23±0.2 ■ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF EE-SX3009-P1/-SX4009-P1 JB301-E3-01 sx4009 omron EE-SX4009-P1 EE-1005 EE-SX4009-P1

    AT-64020

    Abstract: AT64020 AT-64023
    Text: Medium Power Transistors Typical Specifications @ 25°C Case Temperature Part Number VCE (V) P1 dB @ 2 GHz G1 dB @ 2 GHz P1 dB @ 4 GHz G1 dB @ 4 GHz (dBm) (dBm) (dBm) (dBm) AT-64020 16.0 +28 10.0 +27 AT-64023 16.0 +28 12.5 +27 4-20 Package Page No. 6.5 200 mil BeO disk


    Original     		PDF AT-64020 AT-64023 AT-64020 AT64020 AT-64023

    136.21

    Abstract: AT42010 AT-42010 S21E
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz


    Original     		PDF AT-42010 AT-42010 AT42010 RN/50 5965-8910E 136.21 S21E

    micro-x 420

    Abstract: AT-42036 AT-42036-BLK AT-42036-TR1 S21E
    Text: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz • High gain at 1 dB compression: 14.0 dB typical G1 dB at 2.0 GHz 9.5 dB typical G1 dB at 4.0 GHz


    Original     		PDF AT-42036 AT-42036 me10/-0 5980-1854E 5988-4735EN micro-x 420 AT-42036-BLK AT-42036-TR1 S21E

    micro-x 420

    Abstract: No abstract text available
    Text: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz • High gain at 1 dB compression: 14.0 dB typical G1 dB at 2.0 GHz 9.5 dB typical G1 dB at 4.0 GHz


    Original     		PDF AT-42036 5980-1854E micro-x 420

    AT-42035

    Abstract: No abstract text available
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz


    Original     		PDF AT-42035 AT-42035 RN/50 5965-8911E

    AT-42010

    Abstract: S21E
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1␣ dB␣ Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz


    Original     		PDF AT-42010 AT-42010 RN/50 S21E

    EE-1005

    Abstract: EE-SX4009-P1 omron EE-SX4009-P1 171822-3 EE-SX3009-P1 ee-sx3009 SX4009
    Text: Photomicrosensor Transmissive EE-SX3009-P1/-SX4009-P1 • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • • 34 171825-3 (Tyco Electronics AMP) 23±0.2 Screw-mounting model. High resolution with a 0.5-mm-wide sensing aperture.


    Original     		PDF EE-SX3009-P1/-SX4009-P1 EE-1005 UL1007 AWG24 EE-SX4009-P1/EE-SX3009-P1 EE-SX3009-P1/-SX4009-P1 EE-SX4009-P1 omron EE-SX4009-P1 171822-3 EE-SX3009-P1 ee-sx3009 SX4009

    8909E

    Abstract: AT-42000 AT-42000-GP4 S21E
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz


    Original     		PDF AT-42000 AT-42000 RN/50 5965-8909E 8909E AT-42000-GP4 S21E

    AT42070

    Abstract: AT-42070 S21E
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz


    Original     		PDF AT-42070 AT-42070 AT42070 RN/50 5965-8912E 5966-4945E S21E