P3S MARKING Search Results

DATE CODE FOR SUPERTEX

Contextual Info: TP5335 Low Threshold Initial Release P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number/Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* Wafer -350V 30Ω -2.4V TP5335K1 TP5335NW Product marking for SOT-23 P3S❋ Where *=2-week alpha date code

sot-23 Marking 27A E

Abstract: 27A marking code
Contextual Info: DMP3100L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: 100mΩ @ VGS = -10V, ID = -2.7A 170mΩ @ VGS = -4.5V, ID = -2.0A

DATE CODE FOR SUPERTEX

Abstract: TP5335 TP5335K1 TP5335NW
Contextual Info: TP5335 Low Threshold Product Objective Specification P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number/Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* Wafer -350V 30Ω -2.4V TP5335K1 TP5335NW Product marking for SOT-23

marking code 27a

Abstract: sot-23 Marking 27A E DMP3100L marking code k1 P3S marking DMP3100L-7 J-STD-020D
Contextual Info: DMP3100L P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance: 100mΩ @ VGS = -10V, ID = -2.7A 170mΩ @ VGS = -4.5V, ID = -2.0A Low Gate Threshold Voltage

gateway laptop battery pinout

Contextual Info: bq78PL114 www.ti.com. SLUS850B – SEPTEMBER 2008 – REVISED APRIL 2009 PowerLAN Master Gateway Battery Management Controller

Contextual Info: bq78PL116 SLUSAB8B – OCTOBER 2010 – REVISED FEBRUARY 2011 www.ti.com PowerLAN Master Gateway Battery Management Controller With PowerPump™ Cell Balancing Technology Check for Samples: bq78PL116 FEATURES 1 • 23 • • • • • • • • •

SFH- SONY CHEMICAL

Abstract: SFH-1212 bq76PL102 pwm e-bike bq78PL116 SFH-1212A
Contextual Info: bq78PL116 www.ti.com SLUSAB8A – OCTOBER 2010 – REVISED OCTOBER 2010 PowerLAN Master Gateway Battery Management Controller With PowerPump™ Cell Balancing Technology Check for Samples: bq78PL116 FEATURES 1 • 23 • • • • • • • • •

DMP3100L

Abstract: DMP3100L-7 P-Channel SOT-23 Power MOSFET sot-23 Marking 27A
Contextual Info: DMP3100L P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance: 100mΩ @ VGS = -10V, ID = -2.7A 170mΩ @ VGS = -4.5V, ID = -2.0A Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

Contextual Info: DMP3100L P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance: 100mΩ @ VGS = -10V, ID = -2.7A 170mΩ @ VGS = -4.5V, ID = -2.0A Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

BAR63-07F

Abstract: P3S marking TSFP-4
Contextual Info: BAR63-07F XYs Silicon PIN Diode Preliminary data 3
PIN diode for high speed switching of RF signals 2 4 1
Very low forward resistance low insertion loss
Very low capacitance (high isolation) TSFP-4
small inductance
For frequencies up to 3GHz
Ultra small SMD package for dual diodes

Contextual Info: TP5335 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex TP5335 is a low threshold enhancementmode normally-off transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate

zener diode color codes

Abstract: glass diode color codes COLOR BAND MARKING CODES DIODE COLOR BAND MARKING CODES QDS53 QDS54 QDS55 QDS953 QDS954 QDS955
Contextual Info: T - 'y Z f f j f i a a "•C H IP C O M P O N E H T S >•••*• TAIYO YUDEN USA INC 33E D ■ ÛÔBSMVS QGGDSÛQ 0 BITYI <0°v '■. •*; ' ;•:"'• :- '-. ' V C :k ÿ . ÿ $ ^ ■ ' . i - S W IT C H IN G ' T Y P E ' V- ir î- ?■'. ; H ' -’ .>> * Y

Contextual Info: TP2510 Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

BAR63-02W

Abstract: BAR63-02L BAR63-02V
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05

MOSFET B0345

Contextual Info: bq76PL102 www.ti.com . SLUS887A – DECEMBER 2008 – REVISED OCTOBER 2009 PowerLAN Dual-Cell Li-Ion Battery Monitor With PowerPump™ Cell Balancing

DIODE marking A2 SCD80

Abstract: BAR63-02W BAR63-02L BAR63-02V BAR63
Contextual Info: BAR63. Silicon PIN Diodes
PIN diode for high speed switching of RF signals
Very low forward resistance low insertion loss
Very low capacitance (high isolation)
For frequencies up to 3GHz BAR63-02. BAR63-03W 1 BAR63-04 BAR63-04W BAR63-04S BAR63-05

Pin diode G4S

Abstract: BAR63-02L BAR63-04W BAR63 BAR63-03W BAR63-04 BAR63-05 BAR63-05W BAR63-06 BAR63-06W
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05

Z8671

Abstract: z8671 zilog Microprocessor z8671 Z8671 basic w5T marking R/S3C9004/P9004/C9014/Z8671
Contextual Info: 17E D ZILOG INC -V-T- '•& tâCC:^ *?£'&•&:« tV>>*W5t ^04043 000^413 □ »rodùct Specification' Z8671 Z8 MCU with BASIC/Debug Interpreter _ , -T - q o \ - i i - o 7 June 1987 • The Z8671 MCU is a complete microcomputer

Contextual Info: bq76PL102 www.ti.com . SLUS887A – DECEMBER 2008 – REVISED OCTOBER 2009 PowerLAN Dual-Cell Li-Ion Battery Monitor With PowerPump™ Cell Balancing

BAR63-02W

Abstract: BAR63-02L BAR63-02V
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05

Contextual Info: P113SD Series 5.0 V CMOS Clock Oscillators January 2006 • Pletronics’ P113SD Series is a quartz crystal controlled precision square wave generator with a CMOS output. • The P113SD series will directly interface TTL devices also. • Greatly reduces RFI and EMI system sensitivity

Contextual Info: P113SD Series 5.0 V CMOS Clock Oscillators July 2007 • • • • • • NU • • • 70 to 107 MHz Full Size Thru-Hole DIP package Enable/Disable Function Disable function includes low standby power mode 3rd Overtone Crystals used Improved circuit to minimize oscillator issues

Contextual Info: P113SD Series 1.8 V CMOS Clock Oscillators January 2006 • Pletronics’ P113SD Series is a quartz crystal controlled precision square wave generator with a CMOS output. • The P113SD series will directly interface TTL devices also. • Greatly reduces RFI and EMI system sensitivity

Contextual Info: P113SD Series 5.0 V CMOS Clock Oscillators January 2005 • Pletronics’ P113SD Series is a quartz crystal controlled precision square wave generator with a CMOS output. • The P113SD series will directly interface TTL devices also. • Greatly reduces RFI and EMI system sensitivity