P600D
Abstract: diode P600D
Text: P600A, P600B, P600D, P600G, P600J, P600K, P600M www.vishay.com Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward current capability • High forward surge capability
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P600A,
P600B,
P600D,
P600G,
P600J,
P600K,
P600M
22-B106
2002/95/EC.
2002/95/EC
P600D
diode P600D
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Untitled
Abstract: No abstract text available
Text: P600A – P600M WTE POWER SEMICONDUCTORS Pb 6.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: P-600, Molded Plastic
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P600A
P600M
P-600,
MIL-STD-202,
P-600
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p600m DIODE
Abstract: diode P600A diode P600M DC P600A P600B P600D P600G P600J P600K P600M
Text: P600A – P600M WTE POWER SEMICONDUCTORS Pb 6.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: P-600, Molded Plastic
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P600A
P600M
P-600,
MIL-STD-202,
P-600
p600m DIODE
diode P600A
diode P600M DC
P600A
P600B
P600D
P600G
P600J
P600K
P600M
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P600J
Abstract: No abstract text available
Text: P600A thru P600M Vishay General Semiconductor General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 6.0 A VRRM 50 V to 1000 V IFSM 400 A VF 0.9 V, 1.0 V IR 5.0 µA Tj max. 150 °C Case Style P600 Features Mechanical Data • • • •
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P600A
P600M
UL-94V-0
J-STD-002B
JESD22-B102D
30-Aug-05
P600J
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JESD22-B102D
Abstract: J-STD-002B P600 P600A P600B P600M
Text: P600A thru P600M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward current capability • High forward surge capability • Solder Dip 260 °C, 40 seconds Case Style P600
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P600A
P600M
2002/95/EC
2002/96/EC
08-Apr-05
JESD22-B102D
J-STD-002B
P600
P600B
P600M
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diode p600
Abstract: P600 diode Diode P600 equivalent P600 PACKAGE P600M diode diode P600A diode p600m P600 P600D JESD22-B102D
Text: P600A thru P600M Vishay General Semiconductor General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 6.0 A VRRM 50 V to 1000 V IFSM 400 A VF 0.9 V, 1.0 V IR 5.0 µA Tj max. 150 °C Case Style P600 Features Mechanical Data • • • •
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P600A
P600M
UL-94V-0
J-STD-002B
JESD22-B102D
08-Apr-05
diode p600
P600 diode
Diode P600 equivalent
P600 PACKAGE
P600M diode
diode P600A
diode p600m
P600
P600D
JESD22-B102D
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Untitled
Abstract: No abstract text available
Text: P600A thru P600M Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 6.0 A VRRM 50 V to 1000 V IFSM 400 A VF 0.9 V, 1.0 V IR 5.0 µA Tj max. 150 °C Case Style P600 Features • • • • Low forward voltage drop
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P600A
P600M
UL-94V-0
J-STD-002B
MIL-STD-750,
28-Apr-05
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Untitled
Abstract: No abstract text available
Text: P600A thru P600M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward current capability • High forward surge capability • Solder dip 260 °C, 40 s Case Style P600
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P600A
P600M
2002/95/EC
2002/96/EC
J-STD-002
JESD22-B102
08-Apr-05
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P600A
Abstract: p600m diode JESD22-B102D J-STD-002B P600 P600B P600M
Text: P600A thru P600M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward current capability • High forward surge capability • Solder dip 260 °C, 40 seconds Case Style P600
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P600A
P600M
2002/95/EC
2002/96/EC
08-Apr-05
p600m diode
JESD22-B102D
J-STD-002B
P600
P600B
P600M
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Untitled
Abstract: No abstract text available
Text: P600A thru P600M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward current capability • High forward surge capability • Solder Dip 260 °C, 40 seconds Case Style P600
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P600A
P600M
2002/95/EC
2002/96/EC
J-STD-002B
JESD22-B102D
08-Apr-05
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P600 diode
Abstract: JESD22-B102 J-STD-002 P600 P600A P600B P600M
Text: P600A thru P600M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward current capability • High forward surge capability • Solder dip 260 °C, 40 s Case Style P600
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P600A
P600M
2002/95/EC
2002/96/EC
18-Jul-08
P600 diode
JESD22-B102
J-STD-002
P600
P600B
P600M
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P600U
Abstract: No abstract text available
Text: P600A . P600U P600A . P600U Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2012-10-01 Nominal Current Nennstrom 7,5±0.1 62.5±0.5 Ø 8±0.1 Type Ø 1.2±0.05 Dimensions - Maße [mm] 6A Repetitive peak reverse voltage Periodische Spitzensperrspannung
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P600A
P600U
UL94V-0
P600A
P600B
P600D
P600G
P600J
P600U
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P600S
Abstract: P600 P600A P600B P600D P600G P600J P600K
Text: P600A . P600S P600A . P600S Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2006-01-25 Nominal Current Nennstrom ±0.1 7,5±0.1 62.5±0.5 Ø8 Type ±0.05 Ø 1.2 Dimensions - Maße [mm] 6A Repetitive peak reverse voltage Periodische Spitzensperrspannung
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P600A
P600S
UL94V-0
P600S
P600
P600A
P600B
P600D
P600G
P600J
P600K
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J-STD-002
Abstract: P600 P600A P600B P600M
Text: P600A thru P600M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward current capability • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106
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P600A
P600M
22-B106
2002/95/EC
2002/96/EC
AEC-Q101
11-Mar-11
J-STD-002
P600
P600B
P600M
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Untitled
Abstract: No abstract text available
Text: P600A thru P600M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward current capability • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106
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P600A
P600M
22-B106
2002/95/EC
2002/96/EC
AEC-Q101
2011/65/EU
2002/95/EC.
2011/65/EU.
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P600A
Abstract: Dioden P600 P600B P600D P600G P600J P600K
Text: P600A . P600U P600A . P600U Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2011-07-15 Nominal Current Nennstrom ±0.1 7,5±0.1 62.5±0.5 Ø8 Type ±0.05 Ø 1.2 Dimensions - Maße [mm] 6A Repetitive peak reverse voltage Periodische Spitzensperrspannung
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P600A
P600U
UL94V-0
P600A
Dioden
P600
P600B
P600D
P600G
P600J
P600K
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Untitled
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 www.eicsemi.com P600A - P600M IATF 0113686 SGS TH07/1033 SILICON RECTIFIER DIODES D6 PRV : 50 - 1000 Volts FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
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TH09/2479
TH97/2478
P600A
P600M
TH07/1033
UL94V-O
MIL-STD-202,
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6A10 DIODE
Abstract: 6A4 DIODE diode rl207 diode P600A diode RL205 p600m DIODE diode 6a6 diode 6a4 p600b diode DIODE 6A10
Text: Axial Diode Series DIODE RECTIFIERS GENERAL PURPOSE Maximum Peak TYPE Reverse Maximum Average Rectified Maximum Maximum Forward Peak Reverse Current at Half-wave Resistive Surge Current Current at load 50HZ Voltage 50HZ PRV and Maximum Forward Voltage at TA=25°C
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1N4001
DO-41
1N4002
1N4003
1N4004
1N4005
DO-15
6A10 DIODE
6A4 DIODE
diode rl207
diode P600A
diode RL205
p600m DIODE
diode 6a6
diode 6a4
p600b diode
DIODE 6A10
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P600M
Abstract: diodes p600a P600A P600B P600D P600G P600J
Text: TH97/10561QM P600A - P600M TW00/17276EM IATF 0060636 SGS TH07/1033 SILICON RECTIFIER DIODES D6 PRV : 50 - 1000 Volts FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
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TH97/10561QM
P600A
P600M
TW00/17276EM
TH07/1033
UL94V-O
MIL-STD-202,
P600M
diodes p600a
P600B
P600D
P600G
P600J
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Untitled
Abstract: No abstract text available
Text: P600A - P600M SILICON RECTIFIER DIODES D6 PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 1.00 25.4 MIN. 0.360 (9.1) 0.340 (8.6)
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P600A
P600M
UL94V-O
MIL-STD-202,
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SB550 1n5402
Abstract: BY2000 P1000J p1000M p1000s BY1800 1N4002 1N4003 SB840 1N4005
Text: 3A 5A 5/8 A 12 A 7.5±0.1 ±0.5 62.5 7,5±0.1 62.5±0.5 Type 7.5 ±0.1 Type ±0.5 6.3±0.1 Type 62.5±0.5 5.1-0.1 Type +0.5 62.5 -2.5 3.9 62.5 Voltage [V] Diodes / Rectifiers Standard Recovery 2A 5/6 A 10.15 A 15/20 A 25 A 30 A Current 1N4001 BYW27-50 1N5391
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BYW27-50
1N5391
1N5400K
1N5400
BY550-50
P600A
P1000A
PX1500A
1N4002
BYW27-100
SB550 1n5402
BY2000
P1000J
p1000M
p1000s
BY1800
1N4002
1N4003
SB840
1N4005
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P600B
Abstract: P600D P600G P600J P600K
Text: FAGOR G lass Passivated Junction R ectifiers Diodes 3 Im p s, to 6 Amps. The plastic material carries U L recognition 94V-0. A (°C) Surge Forward Current ^FRM (V) Max. Forward Voltage Drop 25°C VF at V (A V ) II Type Repetitive Peak Forward Current Peak
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DO-201AD.
GP30A
GP30B
GP30D
GP30G
GP30J
GP30K
GP30M
P-600
P600B
P600D
P600G
P600J
P600K
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diode IN4000
Abstract: in4000 1n4000 DIODE P600 diode diode P600A 1N4004 or 1N5404 diode P600M DC 1NS400 p600m DIODE IN4000 diode
Text: 5SE » GOLDENTECH DISCRETE MOEbSTfi OOGOOGfl C3 I N - GOIDEHTECH DIKRETC JEmiCOnPUCTOR 1.0 3.0 6.0 AMPERES DIODE RECTIFIER 0041/D027/P600 IN4000 IN5400 s P600 E R I IN4000/IN5400/P600 E MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS fitting* at 2S*C ambient temperature unless otheiwtsa specified;
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IN4000/IN5400/
0041/D027/P600
IN4000
IN5400
1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
diode IN4000
1n4000 DIODE
P600 diode
diode P600A
1N4004 or 1N5404
diode P600M DC
1NS400
p600m DIODE
IN4000 diode
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DIODES BY250
Abstract: BY250 by250 diode N4001 diode n4005 n4007 diode IN5396 1N4001 diodes 1N4001 1N4005
Text: S E M I C O N D U C T O R S INC DTE D | fllBbbSG □ □ □ □ 2 5 3 ñ | • f - ô t - f S ' Silicon Rectifier Diodes The plastic material carries U/L recognition 94V-0. OPERATING AN D STORAGE TEMPERATURE - 5 0 to +175 °C BY250 Series: - 5 0 to +150°C
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BY250
1N4001
1N4002
11M4003
11VI4004
1N4005
1N4006
11M4007
1N5400
DO-27A.
DIODES BY250
by250 diode
N4001 diode
n4005
n4007 diode
IN5396
diodes 1N4001
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