P9006EDG Search Results

P9006EDG

Abstract: nikosem niko-sem nikos
Contextual Info: NIKO-SEM P9006EDG P-Channel Logic Level Enhancement TO-252 Lead-Free Mode Field Effect Transistor Preliminary D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 90mΩ -8A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

Contextual Info: Single P-channel MOSFET ELM32401LA-S •General description ■Features ELM32401LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-60V Id=-7A Rds(on) < 90mΩ (Vgs=-10V) Rds(on) < 135mΩ (Vgs=-4.5V)

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

p2003bdg

Abstract: p1504bdg P3003EDG P6006BD P5504EDG P5504EDG "cross reference" FDS6900AS Cross Reference P0804BD P2804BDG cross reference zxmp6A17
Contextual Info: Issue Number | 002 21 July 2009 New Product Announcement MOSFETs address LCD TV and monitor backlighting Diodes Incorporated has introduced 15 MOSFETs tailored to the needs of power management in LCD backlighting, DC motor control and DC-DC converters. These MOSFETs have been

Contextual Info: 单 P 沟道 MOSFET ELM32401LA-S •概要 ■特点 ELM32401LA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-60V ·Id=-7A ·Rds on < 90mΩ (Vgs=-10V) ·Rds(on) < 135mΩ (Vgs=-4.5V) ■绝对最大额定值

P70N02LDG

Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Contextual Info: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG

Contextual Info: シングル P チャンネル MOSFET ELM32401LA-S •概要 ■特長 ELM32401LA-S は低入力容量 低電圧駆動、 低 ・ Vds=-60V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-7A ・ Rds on < 90mΩ (Vgs=-10V) ・ Rds(on) < 135mΩ (Vgs=-4.5V)

Contextual Info: Single P-channel MOSFET ELM32401LA-S •General description ■Features ELM32401LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-60V Id=-7A Rds(on) < 90mΩ (Vgs=-10V) Rds(on) < 135mΩ (Vgs=-4.5V)