PA 10 DIODE Search Results

DHG10

Abstract: DHG10I1800PA
Contextual Info: DHG 10 I 1800 PA preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1800 V 10 A 300 ns Part number DHG 10 I 1800 PA 3 1 Backside: cathode Features / Advantages: Applications:

Contextual Info: DHG 10 I 1200 PA preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1200 V 10 A 200 ns Part number DHG 10 I 1200 PA 3 1 Backside: cathode Features / Advantages: Applications:

diode marking b2

Abstract: DHG10I1800PA DHG10 508242 10i1800 dhg10i1800 diode marking 432
Contextual Info: DHG 10 I 1800 PA advanced V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1800 V 10 A 150 ns Part number DHG 10 I 1800 PA 3 1 Backside: cathode Features / Advantages: Applications:

t 3866 power transistor

Abstract: t 3866 t 3866 transistor DPG10I200PA DPG10I200PM
Contextual Info: DPG 10 I 200 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 10 A 35 ns Part number DPG 10 I 200 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

DMA10I1600PA

Abstract: diode 1600
Contextual Info: DMA 10 I 1600 PA tentative VRRM = I FAV = VF = Standard Rectifier Single Diode 1600 V 10 A 1.32 V Part number DMA 10 I 1600 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

DPG10I400PM

Abstract: DPG10I400PA
Contextual Info: DPG 10 I 400 PA advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 10 A 45 ns Part number DPG 10 I 400 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

DPG10I400PA

Abstract: DPG10I400PM
Contextual Info: DPG 10 I 400 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 10 A 45 ns Part number DPG 10 I 400 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

DPG10I400PA

Abstract: DPG10I400PM
Contextual Info: DPG 10 I 400 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 10 A 45 ns Part number DPG 10 I 400 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

t 3866 power transistor

Abstract: t 3866 DPG10I300PA anode common fast recovery diode TO-220
Contextual Info: DPG 10 I 300 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 I 300 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

AKZ4

Abstract: led lamp 24 v atex 0368500000 e12 lamp socket ADK1 varistor sl 22
Contextual Info: Content Terminal Blocks Mini Modular Terminals Mini Modular Terminals TS 15 / PA E.2 - E.3 Modular PE terminals TS 15 / PA E4 - E.6 Fuse terminals TS 15 / PA E.7 With push-on connection TS 15 / PA E.8 With solder connection TS 15 / PA E.10 - E.13 With Termi-Point / Wire-Wrap connection

GVD90007-011

Abstract: GVD90007 GVD90005-011
Contextual Info: Preliminary Data - January 1999 GVD90000 Series SUPER HYPERABRUPT TUNING VARACTOR DIODES Surface Mount Low Parasitic Package SMLP FEATURES SPECIFICATIONS • • . • Reverse breakdown voltage (at 10 pA DC) at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25"C: 0.05 pA D<

DIODE 1N4007

Abstract: 0340720000 datasheet DIODE 1N4007 point test 1339060000 0412160000 1N4007 DIODE 041212 0183360000 018-0400
Contextual Info: Disconnect Terminals SAKR SAKR-D SAKC 4 SAKC 10 Pull Pin Pull Pin With StB test points Lever Plug Terminal Block Selection Data Available Options Version With 2 StB test points KrS PA With 2 StB test points KrS Blue PA With 2 StB test points KrS without diode PA

silicon epitaxial mesa diode

Abstract: GVD1404-001
Contextual Info: Preliminary Data - January 1999 GVD1400 SERIES SPRAfilli-GOODMAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA DC

Contextual Info: Preliminary Data - January 1999 GVD20430 SERIES SPRAGUE-GOODMAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA DC

Contextual Info: Preliminary Data - January 1999 GVD20440, GVD20450 SERIES SPRAGUi-GOODIHAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25*C: 0.05 pA DC

0134000000

Abstract: 1n4007 diode
Contextual Info: SAKR-D SAKR Disconnect Terminals SAKC 4 SAKC 10 Pull Pin Pull Pin With StB test points Cl’ Lever Plug Terminal Block Selection Data Available Options Version With 2 StB test points KrS PA With 2 StB test points KrS Blue PA With 2 StB test points KrS without diode PA

GVD30503-001

Contextual Info: Preliminary Data - January 1999 GVD30500 SERIES SPRAGUE-GOODMAN ELECTRONICS. INC. WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 25 V min Maximum reverse leakage current (at -20 V) at 25“C: 0.05 pA DC

SOD323 Package footprint

Abstract: GVD91300 SOD323 parasitic
Contextual Info: Preliminary Data - January 1999 GVD91300 Series MICROWAVE ABRUPT TUNING VARACTOR DIODES Surface Mount Low Parasitic Package SMLP FEATURES SPECIFICATIONS • • • • Reverse breakdown voltage (at 10 pA DC) at 25°C: 30 V min Maximum reverse leakage current (at -25 V) at 25°C: 0.05 pA DC

silicon epitaxial mesa diode

Contextual Info: Preliminary Data - January 1999 GVD92100 Series MICROWAVE HYPERABRUPT TUNING VARACTOR DIODES Surface Mount Low Parasitic Package SMLP FEATURES SPECIFICATIONS • • • • Reverse breakdown voltage (at 10 pA DC) at 25°C: 22 V min Maximum reverse leakage current (at -20 V) at 25°C: 0.05 pA DC

Contextual Info: Preliminary Data - January 1999 GVD1200 SERIES SPRAGIIE-GOODMAN ELECTRONICS, INC. HIGH Q ABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 30 V min Maximum reverse leakage current (at -25 V) at 25°C: 0.05 pA DC

Contextual Info: Low Power, Low Noise and Distortion, Rail-to-Rail Output Amplifiers ADA4841-1/ADA4841-2 Data Sheet FEATURES CONNECTION DIAGRAMS Low power: 1.1 mA/amp Low wideband noise 2.1 nV/√Hz 1.4 pA/√Hz Low 1/f noise 7 nV/√Hz @ 10 Hz 13 pA/√Hz @ 10 Hz Low distortion: −105 dBc @ 100 kHz, VO = 2 V p-p

Contextual Info: Low Power, Low Noise and Distortion, Rail-to-Rail Output Amplifier ADA4841-1 CONNECTION DIAGRAM TOP VIEW Low power: 1.1 mA supply current Low wideband noise 2 nV/√Hz 1.4 pA/√Hz Low 1/F noise 6 nV/√Hz @ 10 Hz 13 pA/√Hz @ 10 Hz Low distortion −110 dBc @ 100 kHz, VO = 2 V p-p

Contextual Info: Low Power, Low Noise and Distortion, Rail-to-Rail Output Amplifiers ADA4841-1/ADA4841-2 CONNECTION DIAGRAMS FEATURES Low power: 1.1 mA/amp Low wideband noise 2.1 nV/√Hz 1.4 pA/√Hz Low 1/f noise 7 nV/√Hz @ 10 Hz 13 pA/√Hz @ 10 Hz Low distortion: −105 dBc @ 100 kHz, VO = 2 V p-p

100nf Capacitor 0201

Abstract: capacitive power supply schematic diagram Snubber circuits theory, design and application AD7685 ADA4841-1 ADA4841-2 ADR364 folded cascode second stage AD768
Contextual Info: Low Power, Low Noise and Distortion, Rail-to-Rail Output Amplifier ADA4841-1/ADA4841-2 FEATURES CONNECTION DIAGRAMS Low power: 1.1 mA/amp Low wideband noise 2.1 nV/√Hz 1.4 pA/√Hz Low 1/f noise 7 nV/√Hz @ 10 Hz 13 pA/√Hz @ 10 Hz Low distortion: −105 dBc @ 100 kHz, VO = 2 V p-p