PA GV Search Results

2SD889

Abstract: 2SB772 KT 185 2SB754 2SB793 2SB751A 2sb764 2sb774 2SB753 2SB757
Contextual Info: - 60 - m n. Ta=25íC, *EP(3Tc=25‘ C SS £ m S ii V’ CBO V’ ceo (V) (V) Ici DC) (A) 2SB751A PA/SW -80 -80 -4 2SB753 PSW/PA -100 -80 -7 2SB754 PSW/PA -50 -50 -7 2SB757 HS PSW/PA/Audio/Reg -40 -40 LF PA -60 LF PA LF PA LF PA 2SB761 2SB76ÎA 2SB762 2SB762A

Contextual Info: CONTA-CONNECT SIK 10 PA-G Fuse disconnect terminals CONTA-CLIP expands its CONTA-CONNECT screwconnection system area with the new fuse disconnect terminals SIK 10 PA-G. The SIK 10 PA-G fuse disconnect terminals, made from glass-fibre reinforced polyamide PA 6.6 V0, have an extended temperature

2SB737

Abstract: 2SB694H 2SB709 2SB718 2SB747 2sb707 2SD601 2SD756 2SD756A 2SB698
Contextual Info: - 58 - n Ta=25*C,*EP(iTc=25t5 2SB694H B Ä L F PA/PStf VcBO VcEO (V) (V) Ice D C) (A) Pe Pe* (W) m ^ fó 4# te (Ta=25°C) (max) ( u Pí) VcB (V) (min) (max) Vc e (V) Ic /I e (A) -0.05 LF PA/LS PSW -0.5 -1.5 LF PA/LS PSW -0.5 -1.5 -0.5 2SB703A LF PA/LS PSW

GVD30503-001

Contextual Info: Preliminary Data - January 1999 GVD30500 SERIES SPRAGUE-GOODMAN ELECTRONICS. INC. WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 25 V min Maximum reverse leakage current (at -20 V) at 25“C: 0.05 pA DC

SOD323 Package footprint

Abstract: GVD91300 SOD323 parasitic
Contextual Info: Preliminary Data - January 1999 GVD91300 Series MICROWAVE ABRUPT TUNING VARACTOR DIODES Surface Mount Low Parasitic Package SMLP FEATURES SPECIFICATIONS • • • • Reverse breakdown voltage (at 10 pA DC) at 25°C: 30 V min Maximum reverse leakage current (at -25 V) at 25°C: 0.05 pA DC

silicon epitaxial mesa diode

Contextual Info: Preliminary Data - January 1999 GVD92100 Series MICROWAVE HYPERABRUPT TUNING VARACTOR DIODES Surface Mount Low Parasitic Package SMLP FEATURES SPECIFICATIONS • • • • Reverse breakdown voltage (at 10 pA DC) at 25°C: 22 V min Maximum reverse leakage current (at -20 V) at 25°C: 0.05 pA DC

GVD90007-011

Abstract: GVD90007 GVD90005-011
Contextual Info: Preliminary Data - January 1999 GVD90000 Series SUPER HYPERABRUPT TUNING VARACTOR DIODES Surface Mount Low Parasitic Package SMLP FEATURES SPECIFICATIONS • • . • Reverse breakdown voltage (at 10 pA DC) at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25"C: 0.05 pA D<

silicon epitaxial mesa diode

Abstract: GVD1404-001
Contextual Info: Preliminary Data - January 1999 GVD1400 SERIES SPRAfilli-GOODMAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA DC

Contextual Info: Preliminary Data - January 1999 GVD20430 SERIES SPRAGUE-GOODMAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA DC

Contextual Info: Preliminary Data - January 1999 GVD1200 SERIES SPRAGIIE-GOODMAN ELECTRONICS, INC. HIGH Q ABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 30 V min Maximum reverse leakage current (at -25 V) at 25°C: 0.05 pA DC

CR SOT23

Abstract: GVD20430
Contextual Info: Preliminary Data - January 1999 GVD20430 SERIES SPRA6UE-G00DHUUI ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTO R DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA Di

Contextual Info: Preliminary Data - January 1999 GVD20440, GVD20450 SERIES SPRAGUi-GOODIHAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25*C: 0.05 pA DC

Junior-timer

Abstract: Junior-timer contact 4146
Contextual Info: TH I S C DRAW ING IS UNPUBLI SHED. RELEASED BY COPYRIGHT FOR ALL PUBLICATION RIGHTS 2006 LOC RESERVED. RE V I S I ONS D I ST A DESCRIPTION LTR G2 REVISED PER ECO-11-005294 PA 6 . 6 GV 30 825 383-4 3-825 414-2 BLUE GREEN PA 6 . 6 GV 30 825 383-4 3 - 8 2 5 414-1

SST12CP11

Contextual Info: 2.4 GHz High-Power and High-Gain Power Amplifier SST12CP11 Data Sheet SST12CP11 is a high-power and high-gain power amplifier PA based on the highly-reliable InGaP/GaAs HBT technology.This PA can be easily configured for high-power applications with good power-added efficiency while operating over the

M2E068-DF

Abstract: R2E225-AT5 R2E225 M2E068DF R2E225AT5105 backward diode transistor 81 110 w 63 R2E225-AT R2E225-A
Contextual Info: AC centrifugal fan Backward curved - Impeller material: Plastic impeller made of PA 6.6 GV, round sheet-metal plate - Bearings: Maintenance-free ball bearings Voltage Frequency Air flow Speed Power consumption Current draw Capacitor capacity Sound pressure level

M2S052CA

Abstract: M2S052-CA backward diode R2S133AE1705
Contextual Info: AC centrifugal fan Backward curved - Impeller material: All-plastic impeller of PA 6.6 GV, injected round sheet-metal plate - Bearings: Maintenance-free ball bearings Voltage Frequency Air flow Speed Power consumption Current draw Sound pressure level Weight

M1G055BD

Abstract: UL1004 M1G055-BD DATASHEET 33 1004 counter M1G055 centrifugal centrifugal fan DATASHEET 1004 R1G133-AA17-02 R1G133AA1702
Contextual Info: EC centrifugal fan Backward curved - Technical equipment: 0-10 VDC / PWM control input, tach output - Impeller material: All-plastic impeller of PA 6.6 GV, injected round sheet-metal plate Current draw Sound pressure level Operative range Ambient temperature

M2E068-BF

Abstract: M2E068BF R2E190AO2605 backward diode ebm-papst transistor BU 110 ntl 1
Contextual Info: AC centrifugal fan Backward curved - Impeller material: All-plastic impeller of PA 6.6 GV, injected round sheet-metal plate - Bearings: Maintenance-free ball bearings Voltage Frequency Air flow Speed Power consumption Current draw Capacitor capacity Sound pressure level

TB1231N

Abstract: TB1238N TB1238 TA1275AZ tb1231 VCO Og 1M preset, horizontal 927R 30fbp
Contextual Info: TB1238N TOSHIBA T O S H IB A Bi-CMOS IN TEG RA T ED CIRCUIT SILICON M O N O LITH IC T B1 2 3 8 N P A L /N T S C 1CHIP IF + VCD PROCESSOR IC TB1238N is th e IF & V id eo processing IC for PA L/N T SC color TV system. This IC d em o du lates PA L/N T SC PIF, SIF

Contextual Info: TB1231AN TOSHIBA T O S H IB A Bi-CMOS IN TEG RA T ED CIRCUIT SILICON M O N O LITH IC T B1 231 AN P A L /N T S C 1CHIP IF + VCD PROCESSOR IC TB1231AN is th e IF & V id eo processing 1C for PA L/N T SC color TV system. This 1C d em o du lates PA L/N T SC PIF, SIF

TB1231CN

Abstract: tb1231 TA1275AZ TB1231N TB1231CN-4 1M preset, horizontal TB1231CN-19 358NTSC
Contextual Info: T O SH IB A TB1231CN T O S H IB A Bi-CMOS IN TEG RA T ED CIRCUIT T B 1 2 3 1 SILICON M O N O LITH IC C N P A L /N T SC 1CHIP IF + VCD PROCESSOR IC TB1231CN is th e IF & V id eo processing 1C for PA L/N T SC color TV system. This 1C d em o du lates PA L/N T SC PIF, SIF

Contextual Info: 960400021 960400021 Material: PA-GV / Temp. +110°C Colour: black Plastic Spacer L = 40.0mm Drawn Mark Wirth 2012-02-24 Würth Elektronik eiSos GmbH & Co KG D – 74638 Waldenburg Max-Eyth-Straße 1 Tel.: 0049 7942-945-0 / Fax: 0049 7942-945-400 www.we-online.de

Contextual Info: 960500042 Temperature-Resistance: 110°C 960500042 Material: PA-GV / UL94 HB DISTANCE ROLE L = 50.0 Colour: black Drawn Mark Wirth 2009-09-22 Würth Elektronik eiSos GmbH & Co KG D – 74638 Waldenburg Max-Eyth-Straße 1 Tel.: 0049 7942-945-0 / Fax: 0049 7942-945-400

Contextual Info: 960020116 Temperature-Resistance: 110°C 960020116 Material: PA-GV / UL94 HB DISTANCE ROLE L = 2.0 Colour: black Drawn Mark Wirth 2010-09-15 Würth Elektronik eiSos GmbH & Co KG D – 74638 Waldenburg Max-Eyth-Straße 1 Tel.: 0049 7942-945-0 / Fax: 0049 7942-945-400