PACIFIC SCIENTIFIC Search Results

ST5M1328-002

Abstract: 2301-08-C pacific scientific 2301-08-B 2301 80063 A3145328 pacific scientific 2301-08-c Ka 8
Contextual Info: PaCIFIC SCIEnTIFIC Pacific Scientific 6382 Rose Lane Carpinteria, CA 93013 Cage 02101 Tel 805.576.5000 Fax 805.576.5020 Electro Kinetics Division Technical Data www.psekd.com SURGE ARRESTER MODEL 2301-08-B AND 2301-08-C 120 Vac or 24 Vdc • Application - Lightning and general purpose surge protection

Differential Magnetoresistive

Abstract: NT-25 NT-50 anisotropic magnetoresistive circuit Design
Contextual Info: NT S e rie s Magneto-Resistive Current Sensors for Peak Currents up to 150 A Excellent A ccuracy No Field C oncentration Small and C om pact Design Sam e Shape for all Current Ranges G paciFic ? S C IE n T IF IC OECO Pacific Scientific-OECO I 4607 SE International Way I Milwaukie, OR 97222 I 503 659-5999 I www.oeco.com

M38UC

Abstract: Stellex M38UC SM4T mixer M38UC-150 a56 transistor 952 STELLEX SFD25 M38DC-400 transistor MY51 transistor MY52 M38UC-400
Contextual Info: M/A-COM, Inc. 1011 Pawtucket Blvd. Lowell, MA 01853-3295 RF and Microwave Products North America MSBU Component Operations Tel: 800.366.2266 Fax: 800.618.8883 Europe/Africa/Middle East Tel: 44.1344.869.595 Fax: 44.1344.300.020 Asia/Pacific Tel: 81.44.844.8296

an 503 sensor hall

Abstract: an 503 hall sensor hall sensor 503 hall effect current sensor solar sensors
Contextual Info: www.oeco.com OECO New Products Pacific Scientific-OECO is pleased to announce two new products within the renewable energy markets, our CSM-010-B solar and CLSM-1000B (wind) sensors. CSM-010-B In a compact, 5V logic compatible design, the CSM-010-B bipolar current sensor measures from less

SMALL ELECTRONICS PROJECTS

Abstract: Stanford Telecom package C500 DIGITAL IC TESTER
Contextual Info: TRENDS Peter Chang ● Charles Lee Electronics R&D in Asia Pacific: Chips and packages – designed in Singapore Southeast Asia’s unabated success in electronics now extends beyond manufacturing to high-value-added services such as software engineering and chip design.

apc smart-ups 1500

Abstract: 1kva inverter circuit diagram STR 6759 schematic diagram on line UPS 10kva STR X 6759 UPS APC UPS APC CIRCUIT smart-ups 1400 APC back UPS RS 800 UPS APC smart 1000 CIRCUIT schematic diagram UPS APC
Contextual Info: Publication 6873-SG005H-EN-P – June 2009 Supersedes Publication 6873-SG005G-EN-P – January 2008 Copyright 2009 Rockwell Automation, Inc. All Rights Reserved. Printed in USA. Encompass Program Product Directory 2009 Asia Pacific Edition Trademarks not belonging to Rockwell Automation are property of their respective companies.

CDS4100ACC-KA

Abstract: CDS4050ACC-KA IEC60134 CDS4025ABC-KA CDS4125ACC-KA CDS4050ABC-KA C571 CDS4010ABC-KA CDS4150ACC-KA resistive level sensor
Contextual Info: paciFic S C IE n T IF IC CDS4015 OECO MagnetoResistive Current Sensor lPN = 15 A D a ta s h e e t The CDS4000 current sensor family is designed for highly dynamic electronic measurement of DC, AC, pulsed and mixed currents with integrated galvanic isolation. The MagnetoResistive tech­

150w

Abstract: MAPF-250128-150000 mapf250128
Contextual Info: MAPF-250128-150000 Linear RF Power TMOS 150W, 30MHz 100V M/A-COM Products Preliminary - Rev. 1108 Features • Designed for Industrial, Scientific, Medical applications • N-Channel enhancement mode MOSFET • Specified 100V, 30MHz and 128MHz, Class AB • Internally insulated Source terminals simplify

Contextual Info: MAPF-250128-150000 Linear RF Power TMOS 150W, 30MHz 100V M/A-COM Products Preliminary - Rev. 1108 Features • Designed for Industrial, Scientific, Medical applications • N-Channel enhancement mode MOSFET • Specified 100V, 30MHz and 128MHz, Class AB • Internally insulated Source terminals simplify

Contextual Info: DALSA IA-DJ-00524 High Quanta, Full Frame Scientific CCD Sensor Overview A 524 x 524 pixel scientific grade CCD with high quantum efficiency, very low noise and an ROI feature. DALSA’s newest 524 x 524 pixel true two-phase CCD sensor was designed to meet exacting

quanta

Abstract: iadj IA-DJ-01044 sensor x-ray CCD SENSOR CCD BINNING
Contextual Info: DALSA IA-DJ-01044 High Quanta, Full Frame Scientific CCD Sensor Overview A 1 megapixel scientific grade CCD with high quantum efficiency, very low noise and an ROI feature. DALSA’s newest one mega pixel true two-phase CCD sensor was designed to meet exacting

quanta

Abstract: sensor x-ray iadj ccd monochrome CCD BINNING DALSA AREA CCD
Contextual Info: DALSA IA-DJ-02084 High Quanta, Full Frame Scientific CCD Sensor Overview A 4 megapixel large area CCD with high quantum efficiency, very low noise and an ROI feature. DALSA’s newest 4 megapixel true two-phase CCD sensor was designed to meet exaxting scientific and X-ray applications requiring high sensitivity, high frame rates and a large field

IEC60134

Abstract: CDS4006 CDS4006ABC-KA CDS4050ACC-KA C571 CDS4150 iec 61800-5-1 CDS4025ABC-KA CDS4006ABC comparative tracking index
Contextual Info: W p a c iF ic S C IE n T IF IC OECO CDS4006 MagnetoResistive Current Sensor lPN = 6 A D ata she et The C D S 4000 curre nt sen sor fa m ily is designed for high ly d yn a m ic electron ic m ea sure m ent of DC, AC, pulsed and m ixed currents w ith integrated ga lva nic isolation. T he M ag ne to R esistive te ch ­

CDS4010ABC-KA

Abstract: CDS4025ABC-KA D2010 CDS4050ACC-KA CDS4010ABC CDS4125ACC-KA C571 IEC60134 laser diodes driver resistive level sensor
Contextual Info: W p a c iF ic S C I E n T I F IC O ECO CDS4010 MagnetoResistive Current Sensor lPN = 10 A D a ta s h e e t The CD S4000 current sensor fam ily is designed fo r highly dynam ic electronic m easurem ent of DC, AC, pulsed and mixed currents with integrated galvanic isolation. The M agnetoR esistive tech­

transistor GaN

Contextual Info: MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features Rev. V3 MAGX-000035-010000 Flanged • GaN Depletion-Mode HEMT Microwave Transistor  Common-Source configuration  No internal matching

Contextual Info: MAGX-000035-015000 MAGX-000035-01500S GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - 3.5 GHz Rev. V1 Features MAGX-000035-015000 Flanged •    GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation

MAGX-000035-030000

Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw transistor 15 GHz MAGX-000035-SB1PPR Gan on silicon transistor GP18-20 5 GHZ TRANSISTOR 1W MAGX-000035
Contextual Info: MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Preliminary, 23 Aug 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation

MAGX-000035-100000

Abstract: GaN amplifier 100W transistor 15 GHz Gan on silicon transistor MAGX-000035-SB2PPR 2.4 GHz rf amplifier 100w 100WCW MAGX-000035
Contextual Info: MAGX-000035-100000 GaN HEMT Power Transistor 100W CW, 30 MHz - 3.5 GHz Preliminary, 23 Aug 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation

MAGX-000035

Contextual Info: MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Production V1 10 Feb 12 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation

Contextual Info: Keysight Technologies N9320B Spectrum Analyzer The Most Cost-effective RF Measurement Instrument for the Manufacture of Consumer Wireless Electronics Introduction Since the Industrial, Scientific and Medical ISM 2.4 GHz frequency band is the most universal, unlicensed RF band

GaN amplifier 100W

Abstract: MAGX-001220-100L00 Gan on silicon transistor
Contextual Info: MAGX-001220-100L00 GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz Production V1 19 Sept 11 Features •       GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package

Contextual Info: MAGX-001220-100L00 GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz Production V1 19 Sept 11 Features •       GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package

410 hall

Abstract: SH-410 sh sensors SH41 043t SH 400
Contextual Info: Hall Sensors Indium Antimonide SH Series Description The SH series Hall effect sensors are four terminal Indium Antimonide devices that are extremely sensitive to low magnetic fields. These devices produce an output voltage, Vh, proportional to the product of the input current, Ic, and the magnetic flux density, B.

CLSM-50LA

Contextual Info: Model CLSM-5QLA Closed Loop Hall E ffect Description The Model CLSM-50LA is a closed loop Hall effect current sensor that accurately measures DC and AC currents and provides electrical isolation between the current carrying conductor and the output of the sensor.