PACKAGE MARKING 22S Search Results

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

SANYO sh2a027-1

Abstract: 3116-SIP12S ic 4040 MPP36S SIP14H 3047a 3151-QIP100E 3149-DIP48S 3037A-DIP20H 3029A-DIP28S
Contextual Info: PACKAGE DIMENSIO Package dimensions for all o f Sanyo's semicondustor devices are provided below. Dimensions are all given in millimeters and those which are not specified as min or max are typical values. Unit: mm 10.9 Package marking is not provided. Refer to the transistor ca ta lo g for electrical connection and lead

BF999

Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package

marking code w7

Abstract: BZT52C surge marking WM BZT52C BZT52C4V3S
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company BZT52C 4V3S to 39S SURFACE MOUNT SILICON ZENER DIODES SOD-323 PLASTIC PACKAGE Marking: As Indicated below with Cathode Band ABSOLUTE MAXIMUM RATINGS DESCRIPTION Maximum Forward Voltage Drop @ IF= 10mA

BB515

Abstract: BF999
Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BZT52C 4V3S to 39S SURFACE MOUNT SILICON ZENER DIODES SOD-323 PLASTIC PACKAGE Marking: As Indicated below with Cathode Band ABSOLUTE MAXIMUM RATINGS DESCRIPTION Maximum Forward Voltage Drop @ IF= 10mA

Bb515

Abstract: bf999
Contextual Info: BF 999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 999 LBs Pin Configuration 1=G 2=D Package

bb515

Abstract: BF999
Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF999 Marking LDs 1=G Pin Configuration 2=D 3=S Package

marking WM

Abstract: marking code w7 BZT52C BZT52C surge ts 4141 BZT52C4V3S SOD 323 MARKING CODE WU
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BZT52C 4V3S to 39S SURFACE MOUNT SILICON ZENER DIODES SOD-323 PLASTIC PACKAGE Marking: As Indicated below with Cathode Band ABSOLUTE MAXIMUM RATINGS DESCRIPTION Maximum Forward Voltage Drop @ IF= 10mA

BF993

Abstract: Silicon N Channel MOSFET Tetrode
Contextual Info: Silicon N Channel MOSFET Tetrode • • BF 993 High gain, low distortion For VHF TV and FM mixer and input stages Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package BF 993 ME Q62702-F899 Q62702-F1018 SOT 143 Maximum ratings

52s marking code

Abstract: 52s marking Silicon N Channel MOSFET Tetrode
Contextual Info: Silicon N Channel MOSFET Tetrode BF 995 F o r F M and V H F T V input and m ixer sta g e s Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B F 995 MB Q 62702-F872 Q 62702-F936 S O T 143 Maximum ratings Parameter

FMX-22S

Abstract: FMX22S
Contextual Info: SANKEN ELECTRIC CO., LTD. FMX-22S 1. Scope The present specifications shall apply to a FMX-22S. 2. Outline Type Silicon Rectifier Diode Structure Resin Molded Applications High Frequency Rectification Flammability: UL94V-0 Equivalent 3. Absolute maximum ratings

FML-22S

Abstract: FML22S
Contextual Info: SANKEN ELECTRIC CO., LTD. FML-22S 1. Scope The present specifications shall apply to an FML-22S. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 030123 1／5 61426-01 SANKEN ELECTRIC CO., LTD.

Contextual Info: SANKEN ELECTRIC CO., LTD. FMM-22S/R １ Scope The present specifications shall apply to an FMM-22S/R. ２ Outline Type Silicon Diode Structure Resin Molded Applications Commercial Frequency Rectification ３ Flammability UL94V-0 Equivalent 040805 1／5 61426-01

FMX-22SL

Contextual Info: SANKEN ELECTRIC CO., LTD. FMX-22SL 1. Scope The present specifications shall apply to an FMX-22SL. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 030813 1／8 61426-01 SANKEN ELECTRIC CO., LTD.

CTS 750 series

Abstract: 330 ohm resistor pack CTS RESISTOR NETWORK 761 CTS Series 750 Resistor Network 670 OHM RESISTOR RESISTOR 4.7K NETWORK 5 tolerance cts resistor 770 & 750 CTS RESISTOR NETWORK A 473 G CTS 767 Series
Contextual Info: C T S CORP bhE D 17fll SDb 0a032b4 17T cm S in g l e -in -l in e S e r ie s 750 Resistance Range: Dielectric Strength: Standard: 220 through 1 Megfl Special: below 22S2 and above 1 Megfi Solid ceramic machine insertable SIP networks. CTS' solid ceramic construction

Contextual Info: STAC3932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 580 W typ. with 24.6 dB gain @ 123 MHz • In compliance with the 2002/95/EC European directive

STAC3932

Abstract: STAC3932B STAC244B
Contextual Info: STAC3932B HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description

resistor 560 ohm

Abstract: SD2933
Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

SD2933W

Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

Footprint recommendation for UDFN4

Contextual Info: STM6519 4-pin Smart Reset Preliminary data Features • Operating voltage range 2 V to 5.5 V ■ Low supply current 1 A ■ Customer test mode ■ Single Smart Reset™ push-button input with fixed extended reset setup delay tSRC from 0.5 s to 10 s in 0.5 s steps (typ.), option with

Footprint recommendation for UDFN4

Abstract: UDFN6
Contextual Info: STM6519 4-pin Smart Reset Features • Operating voltage range 2 V to 5.5 V ■ Low supply current 1 A ■ Customer test mode ■ Single Smart Reset™ push-button input with fixed extended reset setup delay tSRC from 0.5 s to 10 s in 0.5 s steps (typ.), option with

Footprint recommendation for UDFN4

Abstract: udfn-4l STM6519AHARUB6F
Contextual Info: STM6519 4-pin Smart Reset Datasheet − production data Features • Operating voltage range 2 V to 5.5 V ■ Low supply current 1 A ■ Integrated test mode ■ Single Smart Reset™ push-button input with fixed extended reset setup delay tSRC from