PACKAGE MARKING IRFL9014 Search Results

PACKAGE MARKING IRFL9014 Result Highlights (5)

Part	Manufacturer	Description
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)
TPH1R306PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N)
TPH9R00CQ5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N)
TPHR8504PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N)
TPH2R408QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance

PACKAGE MARKING IRFL9014 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FL014 Abstract: MARKING 67A marking code 67A 67a code marking TO-261AA Package code 67a IRFL014 Contextual Info: IRFL9014PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Min. Typ. Max. Units Conditions -60 ––– ––– V VGS = 0V, ID = 250µA	Original	IRFL9014PbF EIA-481 EIA-541. EIA-418-1. FL014 MARKING 67A marking code 67A 67a code marking TO-261AA Package code 67a IRFL014	PDF
IRFL9014PBF Abstract: FL014 IRF 100A AN-994 irf* p-channel sot-223 95153 TO-261AA DSS 1630 Contextual Info: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A	Original	IRFL9014PbF OT-223 EIA-481 EIA-541. EIA-418-1. IRFL9014PBF FL014 IRF 100A AN-994 irf* p-channel sot-223 95153 TO-261AA DSS 1630	PDF
FL014 Abstract: FL014 Example AN-994 IRFL9014 IRFL4310 Contextual Info: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier	Original	0863A IRFL9014 OT-223 OT-223 IRFL014 FL014 FL014 FL014 Example AN-994 IRFL9014 IRFL4310	PDF
FL014 Abstract: IRFL9014PBF AN-994 Contextual Info: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A	Original	IRFL9014PbF OT-223 12-Mar-07 FL014 IRFL9014PBF AN-994	PDF
91195 Abstract: AN-994 VISHAY SOT LOT CODE International Rectifier TO-261AA Contextual Info: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A	Original	IRFL9014PbF OT-223 08-Mar-07 91195 AN-994 VISHAY SOT LOT CODE International Rectifier TO-261AA	PDF
Contextual Info: IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • -60 RDS(on) () VGS = -10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S SOT-223 DESCRIPTION G D	Original	IRFL9014, SiHFL9014 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
LD67 Abstract: 1D11A AN-994 IRFL9014 package marking IRFL9014 Contextual Info: PD-9.863 International Ie Rectifier IRFL9014 HEXFET® Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling ^ dss - "6 0 V ^DS on = 0-50É2	OCR Scan	IRFL9014 OT-223 IT13tÃ LD67 1D11A AN-994 package marking IRFL9014	PDF
Contextual Info: PD 9.863A International k ?r Rectifier IRFL9014 HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling V d s s = -6 0 V R DS on = 0 -5 0 Q	OCR Scan	IRFL9014 OT-223 GD2b44cJ	PDF
Contextual Info: IRFL9014 MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A S Description S O T -2 2 3 The SOT-223 package is designed for surface-mount using	Original	IRFL9014 OT-223	PDF
IRFL9014 Abstract: sot-223 MOSFET AN-994 Contextual Info: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier	Original	0863A IRFL9014 OT-223 performanc10) IRFL9014 sot-223 MOSFET AN-994	PDF
irfl9014 Contextual Info: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier	Original	0863A IRFL9014 OT-223 08-Mar-07 irfl9014	PDF
IRFL9014 Abstract: AN-994 Contextual Info: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier	Original	0863A IRFL9014 OT-223 12-Mar-07 IRFL9014 AN-994	PDF
IRFL9014 Abstract: SiHFL9014 SiHFL9014-E3 IRFL9014TR Contextual Info: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 • Dynamic dV/dt Rating Qgs (nC) 3.8 • Repetitive Avalanche Rated 5.1 • P-Channel Qgd (nC) Configuration	Original	IRFL9014, SiHFL9014 OT-223 OT-223 18-Jul-08 IRFL9014 SiHFL9014-E3 IRFL9014TR	PDF
IRFL9014PBF Abstract: package marking IRFL9014 Contextual Info: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 • Dynamic dV/dt Rating Qgs (nC) 3.8 • Repetitive Avalanche Rated 5.1 • P-Channel Qgd (nC) Configuration	Original	IRFL9014, SiHFL9014 OT-223 OT-223 12-Mar-07 IRFL9014PBF package marking IRFL9014	PDF

IRFL9014 Abstract: SiHFL9014 SiHFL9014-E3 IRFL9014PBF Contextual Info: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 • Dynamic dV/dt Rating Qgs (nC) 3.8 • Repetitive Avalanche Rated 5.1 • P-Channel Qgd (nC) Configuration	Original	IRFL9014, SiHFL9014 2002/95/EC OT-223 OT-223 18-Jul-08 IRFL9014 SiHFL9014-E3 IRFL9014PBF	PDF
IRFL9014 Abstract: SiHFL9014 SiHFL9014-GE3 SiHFL9014-E3 irfl9014trpbf IRFL9014PBF Contextual Info: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DESCRIPTION SOT-223 G D G • Halogen-free According to IEC 61249-2-21	Original	IRFL9014, SiHFL9014 OT-223 2002/95/EC 11-Mar-11 IRFL9014 SiHFL9014-GE3 SiHFL9014-E3 irfl9014trpbf IRFL9014PBF	PDF
mosfet 10d Abstract: P-CHANNEL 90A POWER MOSFET AN-994 IRFL9014 1D11A sot-223 body marking A G Q E Contextual Info: PD-9.863 International Bgg Rectifier IRFL9014 HEXFET P o w e r M O S F E T • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling VDSS = -60 V F * D S o n -	OCR Scan	IRFL9014 OT-223 mosfet 10d P-CHANNEL 90A POWER MOSFET AN-994 IRFL9014 1D11A sot-223 body marking A G Q E	PDF
siliconix sot-223 marking Contextual Info: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21	Original	IRFL9014, SiHFL9014 2002/95/EC OT-223 11-Mar-11 siliconix sot-223 marking	PDF
Contextual Info: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21	Original	IRFL9014, SiHFL9014 OT-223 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
irfl9014trpbf Abstract: IRFL9014TR SiHFL9014TR-GE3 Contextual Info: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21	Original	IRFL9014, SiHFL9014 2002/95/EC OT-223 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 irfl9014trpbf IRFL9014TR SiHFL9014TR-GE3	PDF
Contextual Info: IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S SOT-223 Surface Mount	Original	IRFL9014, SiHFL9014 OT-223 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF
1N4148 Abstract: 2SJ326-Z BSP170P DAC7551 DFN-10 IRFL9014 NTF2955 TP2510 XTR111 Contextual Info: XTR111 XRT1 11 SBOS375 − NOVEMBER 2006 Precision Voltage-to-Current Converter/Transmitter FEATURES DESCRIPTION D EASY-TO-DESIGN INPUT/OUTPUT RANGES: The XTR111 is a precision voltage-to-current converter designed for the standard 0mA−20mA or 4mA−20mA	Original	XTR111 SBOS375 XTR111 0mA-20mA 4mA-20mA 0mA-20mA, 4mA-20mA, 5mA-25mA 1N4148 2SJ326-Z BSP170P DAC7551 DFN-10 IRFL9014 NTF2955 TP2510	PDF
xtr111 Abstract: 5mA-25mA P-MOSFET transistor NEC dfn10 Contextual Info: XTR111 XRT1 11 SBOS375 − NOVEMBER 2006 Precision Voltage-to-Current Converter/Transmitter FEATURES DESCRIPTION D EASY-TO-DESIGN INPUT/OUTPUT RANGES: The XTR111 is a precision voltage-to-current converter designed for the standard 0mA−20mA or 4mA−20mA	Original	XTR111 SBOS375 0mA-20mA, 4mA-20mA, 5mA-25mA XTR111 0mA-20mA 4mA-20mA P-MOSFET transistor NEC dfn10	PDF

PACKAGE MARKING IRFL9014 Search Results

PACKAGE MARKING IRFL9014 Result Highlights (5)

PACKAGE MARKING IRFL9014 Datasheets Context Search

FL014

IRFL9014PBF

FL014

FL014

91195

LD67

IRFL9014

irfl9014

IRFL9014

IRFL9014

IRFL9014PBF

IRFL9014

IRFL9014

mosfet 10d

siliconix sot-223 marking

irfl9014trpbf

irfb4115

1N4148

xtr111