PACKAGE SYMBOL B03 DIODE Search Results

DS9285

Abstract: DS9285A ds-9285
Contextual Info: RT9285A/B Tiny Package, High Performance, Diode Embedded White LED Driver General Description Features The RT9285 is a high frequency asynchronous boost converter with internal diode, which can support 2 to 5 White LEDs for backlighting and OLED power supply. The

Contextual Info: RT9284A/B Tiny Package, High Performance, Constant Current Switching Regulator for White LED General Description Features The RT9284A/B is a compact, high efficient and high integration LED driver. Internal 22V MOSFET can support 2 to 5 White LEDs for backlighting and camera flashing.

RT9612B

Abstract: RT9612 RT9612AGQW package symbol B03 diode RT96 RT9612BGQ
Contextual Info: RT9612A/B Synchronous-Rectified Buck MOSFET Driver General Description The RT9612A/B is a high frequency, synchronous rectified, single phase dual MOSFET driver designed to adapt from normal MOSFET driving applications to high performance CPU VR driving capabilities.

RT9611

Abstract: RT9611AGQW RT9611A RT9611AZQW RT96
Contextual Info: RT9611A/B Synchronous Rectified Buck MOSFET Drivers General Description Features The RT9611A/B is a high frequency, synchronous rectified, single phase dual MOSFET driver designed to adapt from normal MOSFET driving applications to high performance CPU VR driving capabilities.

Contextual Info: RT8237A/B High Efficiency Single Synchronous Buck PWM Controller General Description Features The RT8237A/B PWM controller provides high efficiency, excellent transient response, and high DC output accuracy needed for stepping down high voltage batteries to

RT8206B

Abstract: rt8206 RT8206A WQFN-32L 35v smps smps SMPS circuit for charging 6v battery PCB layout Ultrasonic SWITCH DS820 MOSFET 1052
Contextual Info: RT8206A/B High-Efficiency, Main Power Supply Controllers for Notebook Computers General Description Features The RT8206A/B dual step-down, switch-mode powersupply SMPS controller generates logic-supply voltages in battery-powered systems. The RT8206A/B includes two

C7110

Abstract: MSC7110-01 MSC7112-01 QFP44-P-910-0 C7112-01 b1517 4 digit 7 segment display 28 pin configuration
Contextual Info: E2C0028-27-Y4 ¡ Semiconductor MSC7110-01/7112-01 ¡ Semiconductor ThisMSC7110-01/7112-01 version: Nov. 1997 Previous version: Jul. 1996 12-Segment ¥ 16-Digit or 16-Segment ¥ 12-Digit Display Controller/Driver GENERAL DESCRIPTION The MSC7110-01/MSC7112-01 is a display controller to display the timer of video tape recorder,

MSC7112-01

Abstract: oki C7112-01 Digital Pulse Counter Two Digit MSC7110-01 MSC7112-01SS QFP44-P-910-0 C7112-01
Contextual Info: FEDL7110-03 ¡ Semiconductor MSC7110-01/7112-01 ¡ Semiconductor FEDL7110-03 This version: Sep. 2000 MSC7110-01/7112-01 Previous version: Nov. 1997 12-Segment ¥ 16-Digit or 16-Segment ¥ 12-Digit Display Controller/Driver GENERAL DESCRIPTION The MSC7110-01/MSC7112-01 is a display controller to display the timer of video tape recorder,

oki C7112-01

Abstract: C7112-01 Digital Pulse Counter Two Digit MSC7110-01 MSC7112-01 MSC7112-01SS QFP44-P-910-0 b1517
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

TPB200S

Abstract: TPB245S TPB265S
Contextual Info: [ Z J SCS-THO M SO N IM«Q [I[L[l« QM(gS TPB200S TPB245S/TPB265S SURGE ARRESTORS FEATURES • SOLID STATE SURGE ARRESTOR PACKAGED IN AXIAL DIODE. ■ VOLTAGE RANGE = 200 V TO 265 V ■ TIGHT VOLTAGE TOLERANCE ■ FAST RESPONSE TIME ■ VERY LOW AND STABLE LEAKAGE

SOD-123FL

Contextual Info: SS0520FL – SS0540FL WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features  Low Turn-on Voltage   Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability

SOD123FL

Abstract: SOD-123FL SS0520FL SS0520FL-T1 SS0530FL SS0530FL-T1 SS0540FL SS0540FL-T1
Contextual Info: SS0520FL – SS0540FL WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability

SS0520FL

Abstract: SS0520FL-T1 SS0530FL SS0530FL-T1 SS0540FL SS0540FL-T1 SOD-123FL
Contextual Info: SS0520FL – SS0540FL WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection ! Designed for Surface Mount Application C ! Plastic Material – UL Recognition Flammability

Contextual Info: SGS-THOMSON ^•7#. HD gœilLiOT iD(gi ESM 765-100 800 FAST RECOVERY RECTIFIER DIODES ■ HIGH VOLTAGE CAPABILITY ■ FAST AND SOFT RECOVERY ■ THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF THE trr AND I rm AT 100 °C UNDER USERS CONDITION APPLICATIONS

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT VERTICAL DRIVER FOR CCD SENSORS The ,uPD16520 is a vertical driver for CCD image sensors that has a level conversion circuit and a 3-level output function. Since it incorporates a CCD vertical register driver equivalent to the ^¡PD16510 10 channels, consisting of

Contextual Info: 3875081 G E SOLID STATE 01E optoelectronic S p e c ific a tio n s_ HARRIS SEMICOND SECTOR 19734 T W i-SS 37E D 43G2271 0 D 2 7 n t IH A S 7 Photon Coupled Isolator H11G3 Ga As Infrared Emitting Diode & NPN Silicon Darlington Connected P hototransistor

Contextual Info: SLD303V SONY, 500mW High Power Laser Diode Description Package Outline U n it: mm SLD303V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power o utp ut • Small operating current

Contextual Info: Linear Charger for 1Cell Li-ion Battery with System-path IC MM3538AL Linear Charger for 1Cell Li-ion Battery with System-path IC Monolithic IC MM3538AL Outline This IC is a linear charging control IC with built-in system paths, and includes a chip with system path function

LZ2123Y

Contextual Info: SHARP LZ2123Y LZ2123Y 1 /2 type Color CCD Area Sensor for PAL DESCRIPTION PIN CONNECTIONS LZ2123Y is a 1/2-type 8.0 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi­ mately 320 000 pixels (horizontal 542 x vertical

Contextual Info: SIEMENS BUP 307 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type BUP 307 VCE h 1200V 35A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-218AB Q67078-A4201-A2 Maximum Ratings

Contextual Info: A dvanced P ow er Te c h n o lo g y APT8032LNR 800V 25.0A 0.32U O D O s POWER MOS IVe AVALANCHE RATED N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter / \ Drain-Source Voltage

Contextual Info: D N AMER P H IL IP S /D IS C R E T E • bb53=i31 D 0 3 0 b 5 0 B3Q « A P X Philips Sem iconductors Product Specification Pow erM O S transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

TTH30

Abstract: SLD303WT SLD303WT-1 SLD303WT-2 SLD303WT-21 SLD303WT-3
Contextual Info: S L D 303 W T S o n y , 5 0 0 m W High Power Laser Diode |For the availability of this product, please contact the sales office?! D e s c rip tio n P a c k a g e O u t lin e SLD303W T is a gain-guided, high-power laser diode w ith a built-in TE cooler. Fine tuning of the

GD 743 Siemens

Contextual Info: SIEMENS BUZ 103 AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also In TQ-220 SMD available Type BUZ103AL ^bs 50 V b 35 A ^DS on