PANASONIC 2SC Search Results

hy 9u

Abstract: panasonic linear ccd t3bf
Contextual Info: ~7E PANASONIC INDL/ELEK -CIO 6932052 PANASONIC INDLtELECTRONIC “ I>F§fc,T3Bfl5E OOObbflH ö J ~ 72C 06682 '¿ T D T -41-55 MN8061A “ M N8061A 2,592 M -y h Ä Ä • CCD - i j< — iî-b 2,592-Bit High-Speed, H igh-Sensitivity CCD Linear Image Sensor B $1 H

Contextual Info: PANASONIC 6932852 PANASONIC x U b T S IC A N 5 m. # 72 D e b132fl5S INDL*ELECTRONIC 72C 07836 00D7a3b D _I_ T T 7 - ^ > t 3 . i Y I F , S IF 0 S & /C o lo r T V V IF and S IF AN5112 C irc u it k U n it I AN5112 l i , • U C J-

ci 4093

Abstract: pin diagram ic 4093 ic hc 4093 IC 4093 pin block diagram HC 4093 BS802 IC 4093 IC 4093 DESCRIPTION Ifj sensor Linear Image sensor IC for CIS
Contextual Info: 72 PANASONIC INDL/ELEK -CIO » F l b T a a a s H □□□ttaa t d B É a a w "693285,2 PANASONIC 72C I N D L » ELECT RON IC 06688 ;•• r-.W T '. D T-41-55 MN8063 M N 8 0 6 3 Æ 4,096 K y h . S a - « Ü S CCD 4,096—Bit High-Speed, High-Sensitivity CCD Linear Image .Sensor

XIFG

Abstract: Linear Image sensor IC for CIS panasonic aom drive bn z00 TA 2092 N 11C2 LS37 MN8060A CCD Linear Image Sensor CCD Sensor, Panasonic
Contextual Info: PANASONIC INDL/ELEK -CIO ‘693285.2 PANASONIC □□□bti7ti 5 ~TS I ND L » E L E C T R O N I C 72C 06676 D T-41-55 MN8060A M N 8060A 2,048 t*'y I-A 3 • Ä i S Ä C C D II - T -f ^ - ¿ > - f e 's * ï 2,048-B it High-Speed, H igh -S en sitivity CCD Linear Image S en sor

Contextual Info: PANASONIC 6932852 PANASONIC INDL/ELEK 7E { I O » F | b 1= 5 3 2 0 5 5 I N D L » ELECTRON I C 72Ç 0 6 6 0 1 ODObbül Û D MN8033, MN8033S T-TVöH'OS M N 8033, M N 8033S CCD n a CCD Delay Line for Video Signal « M N 8033, I ^ -î-S S S E I/P in A ssignm ent

2SK1605

Contextual Info: Application Block Diagrams • V id e o A pplications ß Liquid Crystal Display TV Fluorescent light inverter circuit 2SK1605/2SC4559/2SC3824) 9 EVF/VPS (Color Liquid Crystal Panel Product Kits) R,G,B R.G.B -2 7 - Panasonic

Contextual Info: Panasonic Transistor 2SC4410 Silicon NPN epitaxial planer type For UHF am plification • Unit: mm Features • Allowing the small current and low voltage operation. • High transition frequency fT. • S-Mini type package, allowing downsizing of the equipment and

Contextual Info: Panasonic Transistor 2SC4715 Silicon NPN epitaxial planer type For low -frequency high breakdow n voltage am plification , Unit: mm 4 . 0 ± 0.2 h- 1 • Features • Satisfactory linearity of forward current transfer ratio hFE. • High collector to emitter voltage Vceo.

Contextual Info: Panasonic Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency am plification • U nit: mm 0.4 Features • Optimum for RF amplification of EM/AM radios. • High transition frequency fT. • SS-Mini type package, allowing downsizing of the equipment

XP6543

Abstract: 25CT5A 9y transistor
Contextual Info: Composite Transistors Panasonic XP6543 Silicon NPN epitaxial planer transistor Unit: mm For low frequency amplification • Features • • High transition frequency fT. Two elements incorporated into one package. ■ Basic Part Number of Element • 2SC3904 x 2 elements

diode v3e

Abstract: 2sc5572
Contextual Info: Panasonic Horizontal Deflection Output Transistor 2SC5572 • Absolute Maximum Ratings Unitami Parameter Rating Symbol Unit ^.0 s3 3 C 3.2rC .1 Collector to base voltage VCBO 1500 V Collector to emitter voltage vets 1500 V Emitter to base voltage YESO 7 V

transistor marking ra

Contextual Info: Panasonic Transistor 2SC3936 Silicon NPN epitaxial planer type For high-frequency am plification • U nit: mm 0.425 Features • Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. • S-Mini type package, allowing downsizing of the equipment and

P02R

Abstract: IC cd 4093
Contextual Info: 72 »FlbTaaasH □□□ttaa PANASONIC INDL/ELEK -CIO d B É a a w "693285,2 PANASONIC I N D L » E L E C T RON I C 72C 0 6 6 8 8 ;• •r-.WT'. D T-41-55 MN8063 M N 8 0 6 3 4,096 K y h . S a - Æ « Ü S CCD 4,096—Bit High-Speed, High -Sensitivity C C D L in ea r Image . S e n so r

Contextual Info: Panasonic Transistor 2SC5419 Silicon NPN triple diffusion planer type For low -frequency output am plification • Unit: mm Features • High collector to emitter voltage Vceo. • High transition frequency fT. • Allowing supply with the radial taping. A bsolute M axim um Ratings

Contextual Info: PANASONIC INDL/ELEK -CIO 12E D • 1^35055 Q01Q4SS h Silicon NPN Triple Diffused Power Transistors r 33 os 2SC2738 NPN " TO-220 Package ) Absolute Maximum Ratings (Ta=25°G) ftem Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Collector Current

8201S

Abstract: J32C 35aS2
Contextual Info: PANASONIC INDL/ELEK -CICJ 72 6932 8 52 PANASONIC DE'Jb'jaafiSa [I00L.701 & J - I N D U ELEC TRO N IC_ 72C 0 6 7 0 1 .D y-41 -55 MN8201SW zyy M N8201SW CPD E l f t í U t S I ^ / C P D CHARGE PRIMING DEVICE Solid-S tate Image Sensor w T - iS B S / P in M N 8201SW (±. î f f l < B f l& S f t / . ; G P (C harge Prim ing = Pf

Contextual Info: Panasonic Transistor 2SC3965 Silicon NPN triple diffusion planer type For sm all TV video output • Features • High collector to emitter voltage Vceo. • Small collector output capacitance Cob. • Allowing supply with the radial taping. A bsolute M axim um Ratings

Contextual Info: Panasonic Transistor 2SC4627J Silicon NPN epitaxial planer type For high-frequency am plification U nit: mm • Features • Optimum for RF amplification of EM/AM radios. • High transition frequency fT. • SS-Mini type package, allowing downsizing of the equipment

Contextual Info: PANASONIC INDL/ELEK -CIO bTBHSSS 1EE D Silicon NPN Triple Diffused Power Transistors OOIQHST 3 2SC2740 NPN r-^ 3 -jj TOP-3 Package Absolute Maximum Ratings (Ta=25°C) Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Collector Current

2Sc2486

Abstract: 2SA1062
Contextual Info: PANASONIC INDL/ELEK -CIO 1EE 1 • bTBSÛSS QQ104S1 T ■ Silicon Epitaxal Base ' lesa Transistor T-33-Z1 r 33 3 2SA1062 PNP) 2SC2486(NPN) TOP-3 Package (See Page 36 For Dimensions)_ 2SA1062 (PNPÌ Absolute Maximum Ratings (Ta=25°C) Item

Contextual Info: Panasonic Transistor 2SC3937 Silicon NPN epitaxial planer type For UHF band low -noise am plification Unit: mm 0.425 • Features • • • • Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and

2SC2740

Contextual Info: PANASONIC INDL/ELEK -CIO OOIQHST 3 1EE D Silicon NPN Triple Diffused Power Transistors r-^3 2SC2740 NPN -)j TOP-3 Package Absolute Maximum Ratings (Ta=25°C) Item Symbol Rating Unit Collector-Base Voltage V cbo 500 V Collector-Emitter Voltage V ceo 400 V

Contextual Info: PANASONIC INDL/ELEK -CIO 1EE 1 • bTBSÛSS QQ104S1 T ■ Silicon Epitaxal Base ‘ lesa Transistor T-33-Z1 r 33 3 2SA1062 PNP) 2SC2486(NPN) TOP-3 Package (See Page 36 For Dimensions)_ 2SA1062 (PNPÌ Absolute Maximum Ratings (Ta=25°C) Item

2SC2738

Abstract: 25r-r
Contextual Info: PANASONIC INDL/ELEK -CIO 12E D • 1^35055 Q01Q4SS h Silicon NPN Triple Diffused Power Transistors r 33 os 2SC2738 NPN " TO-220 Package ) Absolute Maximum Ratings (Ta=25°G) ftem Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Collector Current