PANASONIC FC 10 Search Results

Contextual Info: Panasonic Aluminum Electrolytic Capacitors/FC Surface Mount Type Aluminum Electrolytic Capacitors Series: Type: Japan FC V Surface mount type k J 4 Low im pedance High Reliability ü . Forpower Supply Low ESR FC 105 °C 1000Hr I Features Lifetime: 105 °C 1000 h

compressor DC125E12RAW5

Abstract: DC125E12RAW5 dc110e10raw5 COMPRESSOR dc110e10raw5 "220V DC" motor dc110e10 dc110e R600a DC91E10RAX5 DC100E11RAX5
Contextual Info: Panasonic Compressor R600a DC series Performance DATA Application & Refrigerant LBP R600a Voltage Model Displace*1 Capacity W) *2) C.O.P. *3) Compressor Net weight Oil charge cooling *4) ment Evaporating temperature Run. capa. kg cm3 Motor type ST OC FC ST/FC OC ST/FC OC

3300S

Contextual Info: Panasonic A lum inum Electrolytic C apacitors/FC Aluminum Electrolytic Capacitors Radial Lead Type Japan Series: FC Type A (Radial Leads) sty le 04/JIS C 5141 Low im pedance High Reliability For Power Supply • Features • Low im pedance • Life tim e: 1000 h to 5000 h at 105 °C

Contextual Info: Panasonic Infrared Light Emitting Diodes LNA4401L GaAIAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 10 mW typ. • Fast response and high-speed modulation capability : fc = 20 MHz (typ.)

Contextual Info: Panasonic Infrared Light Emitting Diodes LN75X GaAIAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 10 mW typ. • High-speed modulation capability : fc = 12 MHz I Absolute Maximum Ratings (Ta = 25°C)

Infrared Emitting Diode

Abstract: LNA4401L
Contextual Info: Panasonic Infrared Light Emitting Diodes LNA4401L GaAIAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 10 mW typ. • Fast response and high-speed modulation capability : fc = 20 M H z (typ.)

Infrared Emitting Diode

Abstract: LN78 850 nm Infrared Emitting Diode,
Contextual Info: Panasonic Infrared Light Emitting Diodes LN78 GaAIAs Infrared Light Emitting Diode U nit : mm 2.9+0.25 For optical control cystems • Features • H igh-pow er output, high-efficiency : P Q = 10 mW typ. • H igh-speed modulation capability : fc = 12 MHz

Contextual Info: Panasonic Infrared Light Emitting Diodes LNA4401L GaAIAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 10 mW typ. • Fast response and high-speed m odulation capability : fc = 20 M H z (typ.)

Infrared Emitting Diode

Abstract: LN75X LN77L
Contextual Info: Panasonic Infrared Light Emitting Diodes LN75X GaAIAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 10 mW typ. • H igh-speed modulation capability : fc = 12 MHz IAbsolute Maximum Ratings (Ta = 25°C)

Contextual Info: Panasonic Infrared Light Emitting Diodes LN78 GaAIAs Infrared Light Emitting Diode For optical control cystems • Features • H igh-pow er output, high-efficiency : P Q = 10 mW typ. • H igh-speed m odulation capability : fc = 12 M Hz IAbsolute Maximum Ratings (Ta = 25°C)

Contextual Info: Panasonic Infrared Light Emitting Diodes LN77L GaAIAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 1 8 mW typ. • Fast response and high-speed modulation capability : fc = 20 MHz (typ.)

MN4364-15

Abstract: 105 m5e l71l lt 719 sfe 5,5 ma MN4364-20 HELI PD 20 S MN4364 a9tv
Contextual Info: PANASONIC 6932852 INDL/ELEK PANASONIC -CIO 72 De | fc,*i32flS2 72C I NDL« ELECTRONIC D00b324 0 6 324 M ^ MN43Ó4-15, MN4364-20 . T - M 1 , - 3 3 - I l MN4364-1 5, MN4364-20 6 5 ,5 3 6 t £ >y h N M O S S -y ^ R A M 6 5, 5 3 6 -B it N M O S Dynamic RAM

Contextual Info: Panasonic Infrared Light Emitting Diodes LNA4801L GaAIAs Infrared Light Em itting Diode For optical control systems • Features • Fast response and high-speed modulation capability : fc = 20 MHz typ. • Wide directivity : 0 = 22 deg. (typ.) • Transparent epoxy resin package

Infrared Emitting Diode

Abstract: LNA4801L
Contextual Info: Panasonic Infrared Light Emitting Diodes LNA4801L GaAIAs Infrared Light Emitting Diode For optical control systems • Features • Fast response and high-speed modulation capability : fc = 20 M H z typ. • W ide directivity : 0 = 22 deg. (typ.) • Transparent epoxy resin package

LN77L

Contextual Info: Panasonic Infrared Light Emitting Diodes LN77L GaAIAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 18 mW typ. • Fast response and high-speed m odulation capability : fc = 20 M H z (typ.)

Contextual Info: Panasonic Infrared Light Emitting Diodes LN75X GaAIAs Infrared Light Em itting Diode For o ptical control system s • Features • High-power output, high-efficiency : PQ = 10 mW typ. • High-speed modulation capability : fc = 1 2 MHz I A b solu te M axim um R atings (Ta = 25°C)

STG180

Contextual Info: Panasonic Infrared Light Emitting Diodes LN78 GaAIAs Infrared Light Em itting Diode For o ptical control cystem s • Features • High-power output, high-efficiency : PQ = 10 mW typ. • High-speed modulation capability : fc = 1 2 MHz I A b solu te M axim um R atings (Ta = 25°C)

HT 1200-4

Abstract: MN8027 2048 x 1 ccd linear array IR sensor panasonic 7f15 10O-2
Contextual Info: PANASONIC INDL/ELEK -CIO 69328:52 PANASONIC DE I [^32055 OODbLibb 0 I N D L » E L E C T R O N-1*I C r*n f- fcn w *— ,.Z £ ^ ù ó 6 6 6 _ o _ „ I : 4i l Ì 5 _ MN8027 -r^-v-tzy+j- MN8027 2 ,0 4 8 fc í'y h C C D V — /''i ¿ — i > - & > ’* ' / 2 ,048-Bit C C D

HUL7203

Abstract: hologram unit panasonic fc
Contextual Info: Panasonic Hologram Unit HUL7203 Hologram Unit Unit : mm Index mark for No. 1 pin on reverse side For optical information processing 4j 2.55 • F eatures : • Smaller package size achieved through micro-mirror integration 4.8 X 8.2 X 4.3 mm • Fast response (fc = 35 MHz)

mn1400

Abstract: MN1418 MN1411 22-DIP CRTC tets MN1413 MN1416 EN 1418 Single Chip Microcomputers
Contextual Info: PANASONIC r IND L / E L E K -CIO 75 FF| b^SASE N 1 4 1 x l" / M N l 4 8 4 e *y h • 1 | M N 1 4 0 0 Family— 3 MN1410/MN1480 Series y -f^ D I] 4 -B it 69328 52 PANASONIC INDL,ELECTRONIC M 000571Û T 72C 05718 D S e r i e s *y :A ~7 4 $ □ □ V fc° n. - ?

mn3305

Abstract: 4096-STAGE BBD delay line 06485 VX30
Contextual Info: PANASONIC INDL/ELEK -CIO 7E DE | hTBEflSE GGDbMflM 4 7 2C_06 48_4 ' ' ' 6 9 3 2 8 5 2 PANASONIC I NDL. ELECTRÛNI C 7Î — BBD _D » MR'33'05 T-fc.-09-a 3 M N 3 3 5 Æ 4 0 9 6 S : iS f f i® ± B B D 4 0 9 6 -S ta g e Ultra Low Voltage Operation B B D for Audio Si gn als

timer 6840

Abstract: 06200 g2c2 125KQ A-04 MA162 MN6840 panasonic tsu
Contextual Info: PANASONIC INDL/ELEK 6932852 • cío ?a PANASONIC deT| 1^32055 o o a t.m s ^ J ~ üT-6~/-/? 72C 06 199 I N D L » E L E C T R O N IC ^ - r ' ^ D Z i ^ f z L - ^ l i m L ' S I . M N6840 8 fc?*y 1 'Ü 0 S L S I7 ° p ^ 7 7 7 ' ; ^ <f P rogram m able T im er Module P T M

Intel 8048

Abstract: TCA 875 MN8048H FEME 1kx8 rom CLX5
Contextual Info: PANASONIC 6932852 W INDL/ELEK PANASONIC -CIO T Ë J 72 b^ SflSS 72C I N D L * E L E C T R O N IC 0005^13 05913 Æ D f - ¥ - ? '/ ? - 0 * MN8048H ? D = > fc :ii-5 K 8 -B it) M N 8 0 4 8 H W 7 f ) 8\£y\ * lf ROM , R A M F*3i0 8-B it Single-Chip Microcomputer (with Clock and ROM, RAM on Chip)

Contextual Info: Panasonic Hologram Unit HUL7251 Hologram Unit Unit : mm Index mark for N o.l For optical information processing • F eatures • Thin sm aller package size achieved through m icro-m irror integration 3.3 X 6.8 X 4.3 mm • Fast response (fc = 35 M Hz) • Focus error signal detection : SSD method