PB 05 TRANSISTOR Search Results

PT008-05

Abstract: PT008
Contextual Info: epitex Opto-Device & Custom LED PHOTO-DIODE PT008-05 Lead Pb Free Product RoHS compliant PT008-05 mold type Phototransistor PT008-05 is an epoxy mold type phototransistor featuring high photo current. This phototransistor consists of a chip with 0.6*0.6mm active area mounted

PT010-05

Abstract: lens photodiode phototransistor
Contextual Info: epitex Opto-Device & Custom LED PHOTO-DIODE PT010-05 Lead Pb Free Product RoHS compliant PT010-05 mold type Phototransistor PT010-05 is an epoxy mold type phototransistor featuring high photo current. This phototransistor consists of a chip with 0.8*0.8mm active area mounted

NEC C51A

Abstract: nec inverter schematic F074 marking B007 marking B003 JH-04 UPB6101C
Contextual Info: N É C ELECTRONICS INC 7H c D e | LiMH752S DD0Û110 1 NEC NEC Electronics Inc. T-.42-11-05 //PB 6100 TTL-2 SERIES BIPOLAR TTL GATE ARRAYS March 1985 Revision 1 Description The //PB6100 series features three high-speed, lowpower, TTL-compatible gate arrays using advanced

uPB6101C

Abstract: NEC C51A N021C F010 nec inverter schematic nec lot code format T-42-11-05
Contextual Info: N É C ELECTRONICS INC 7H D e | LiMH752S DD0Û110 1 NEC N E C Electronics Inc. c T-.42-11-05 //PB 6100 TTL-2 SERIES BIPOLAR TTL GATE ARRAYS March 1985 Revision 1 Description The //PB6100 series features three high-speed, lowpower, TTL-compatible gate arrays using advanced

SPP2341

Abstract: MOSFET SPP2341S23RGB 41YW SPP2341S23RG P-Channel MOSFET 12V SOT 23 NO32
Contextual Info: SPP2341 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2341 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN2302

Abstract: MOSFET SPN2302S23RG sot 26 N-Channel MOSFET
Contextual Info: SPN2302 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPP3401

Abstract: MOSFET SPP3401S23RG a1yw SPP3401S23RGB
Contextual Info: SPP3401 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN09T10T252RG

Abstract: n-channel mosfet transistor low power SPN09T10 static characteristics of mosfet TO-252 N-channel MOSFET 100V 8A N-Channel MOSFET
Contextual Info: SPN09T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN09T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN09T10 has been designed specifically to improve the overall

SPN1012

Abstract: 20V n-Channel Power MOSFET SC-89 SPN1012S52RG mosfet gate source voltage 20v SPN1012S52RGB
Contextual Info: SPN1012 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

07 MARKING CODE MOSFET

Abstract: SPN3400 SPN3400S23RG
Contextual Info: SPN3400 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN1026

Abstract: SPN1026S56RG Dual N-Channel
Contextual Info: SPN1026 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1026 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while

SPN4850

Contextual Info: SPN4850 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4850 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN1024

Abstract: MARKING 4A sot-563 sot-563 MOSFET D1 power mosfet 5a 20v spn1024s56
Contextual Info: SPN1024 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1024 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

SOP-8P

Abstract: SPP9434
Contextual Info: SPP9434 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Transistor Mosfet N-Ch 30V

Abstract: N and P MOSFET
Contextual Info: SPC4539A N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC4539A is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

SPC4516

Abstract: N & P MOSFET
Contextual Info: SPC4516 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC4516 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

Contextual Info: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1

J201 Replacement

Abstract: JFET 401 Dual PNP Transistor depletion 60V power mosfet 3N165 "pin compatible"
Contextual Info: IT130A IT130 IT131 IT132 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT130 Series Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector Current

sot 26 Dual N-Channel MOSFET

Abstract: 10mA JFET LS358
Contextual Info: LS358 LOG CONFORMANCE MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES ∆re ≤1Ω from ideal TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC C2 E1 5 B1 BOTH SIDES 500mW 4.3mW/°C

jfet differential transistor

Abstract: JFET 401 U402 N CHANNEL FET
Contextual Info: LS318 LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES ∆re =1Ω TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC Maximum Temperatures Storage Temperature Range Operating Junction Temperature

J201 Replacement

Abstract: 2N5019 "direct replacement"
Contextual Info: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation

Current Regulator Diode

Abstract: J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor
Contextual Info: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES HIGH GAIN hFE ≥ 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 275MHz TYP. @ 1mA C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted

Contextual Info: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted

Contextual Info: IT120A IT120 IT121 IT122 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT120 Series Pin for Pin Compatible C1 ABSOLUTE MAXIMUM RATINGS NOTE 1 E1 C2 TA= 25°C unless otherwise noted IC Collector Current