PC 150-75 HG Search Results

UL-94-5V

Contextual Info: 130 X 180 X 75 FIBOX MNX PC Order symbol PC 150/75 HG El. number Sweden Denmark Finland 3420353 EAN-code 6418074022189 Including Enclosure cover with cover screws, body with mounting screws and gasket. USA: UL Type 1,4, 4X, 6 EURO: IP 66/67 EN 60529 ; IK 08 (EN 50102)

g30n60c3

Abstract: TA49051 igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 740 MOSFET TRANSISTOR g30n60
Contextual Info: HGTG30N60C3 S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT January 1997 Features • • • • • Package 63A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating

40n60c3

Abstract: g40n6 RHRP30120 40N60C3R 0n60 TA49049 40N60C RHRP30120 equivalent HGTG40N60C3R LD26
Contextual Info: [ /Title HGT G40N6 0C3R /Subject (75A, 600V, Rugged, UFS Series NChannel IGBT) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power T CT DUC PRO PRODU E T E E L T O U OBS UBSTIT 0C3 6 S N E

g30n60c3

Abstract: TA49051 HGTG30N60C3 LD26 RHRP3060 g30n60
Contextual Info: HGTG30N60C3 Data Sheet January 2000 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G30N60B3

Abstract: HGTG30N60B3 LD26 TA49170
Contextual Info: HGTG30N60B3 Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

g30n60

Abstract: g30n60c3d RHRP3060 TA49051 TA49053 HGTG30N60C3D
Contextual Info: HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input

40n60c3

Abstract: 40n60 40N60C3R HGTG40N60C3R LD26 RHRP30120
Contextual Info: HGTG40N60C3R Semiconductor 75A, 600V, Rugged, UFS Series N-Channel IGBT May 1997 Features Description • 75A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices

g30n60c3d

Abstract: G30N60 TA49053 TA49051 HGTG30N60C3D LD26 RHRP3060
Contextual Info: HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input

40N60C3R

Abstract: HGTG40N60C3R LD26 RHRP30120 40N60C3
Contextual Info: HGTG40N60C3R 75A, 600V, Rugged, UFS Series N-Channel IGBT May 1997 Features Description • 75A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices

TA49053

Abstract: g30n60c3d
Contextual Info: HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input

g30n60c3d

Abstract: G30N60 transistor 40411 40411 transistor TA49051 TA49014 No 42 G30N60C3D TA49053 HGTG30N60C3D N-channel enhancement 200V 60A
Contextual Info: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features • • • • • Package o 63A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating

hgtm

Abstract: CQ 637
Contextual Info: S SftSKR HGTM12N60D1 12A, 600V N-Channel IGBT December 1993 Package Features JEDEC T0-204AA BOTTOM VIEW • 12 Amp, 600 Volt • Latch Free Operation • Typical Fall Time <500ns • High Input Impedance Jf >COLLECTOR (FLANGE EMITTER • Low Conduction Loss

G30N60B3D

Abstract: G30N60 G30N60B3 HGTG30N60B3D LD26 TA49053 TA49170 TA49172
Contextual Info: HGTG30N60B3D Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

Contextual Info: HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

g12n60d1

Abstract: AN7254 AN7260 HGTP12N60D1
Contextual Info: HGTP12N60D1 S E M I C O N D U C T O R 12A, 600V N-Channel IGBT April 1995 Features Package • 12A, 600V JEDEC TO-220AB • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR FLANGE • Low Conduction Loss

g30n60b3

Abstract: G30N60 HGTG30N60B3 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560
Contextual Info: HGTG30N60B3 Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

g30n60b3

Abstract: HGTG30N60B3
Contextual Info: HGTG30N60B3 Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

g30n60b3

Abstract: HGTG30N60B3 8508 zener g30n60 HGTG30N60B3D LD26 TA49170 G30N60B
Contextual Info: HGTG30N60B3 TM Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a

g30n60b3

Abstract: HGTG30N60B3 HGTG30N60B3D LD26 TA49170
Contextual Info: HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

HARRIS IGBT

Contextual Info: HA RR IS S E M I C O N D S E CT OR H M3Ü 2 27 1 D O S G IT ? 34h H H A S HGTM12N60D1 ffl H f f l S December bûE ]> 12A, 600V N-Channel IGBT 1993 Package Features JEDEC T0-204AA BOTTOM VIEW • 12 Amp, 600 Volt • Latch Free Operation • Typical Fall Time <500ns

40n60c3

Abstract: 40N60C3R RHRP30120 HGTG40N60C3R LD26 40n60
Contextual Info: HGTG40N60C3R S E M I C O N D U C T O R 75A, 600V, Rugged, UFS Series N-Channel IGBT May 1997 Features Description • 75A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as

G40N60

Abstract: HGTG40N60C3 LD26 RHRP3060 g40n60c3
Contextual Info: HGTG40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction

HGTG30N60C3D

Abstract: IGBTs g30n60c3d No 42 G30N60C3D TA49051 TA49053 LD26 RHRP3060
Contextual Info: HGTG30N60C3D Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input

G30N60C3

Abstract: igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 TA49051
Contextual Info: HGTG30N60C3 Data Sheet January 2000 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar