PC10 Search Results

M366S6453DTS

Contextual Info: M366S6453DTS PC133/PC100 Unbuffered DIMM M366S6453DTS SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S6453DTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

M374S6453CTS

Contextual Info: PC133/PC100 Unbuffered DIMM M374S6453CTS M374S6453CTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S6453CTS is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

MT48LC4M32B2P

Abstract: MT48LC4M32B2TG-7 MT48LC4M32B2 128MbSDRAMx32
Contextual Info: 128Mb: x32 SDRAM Features Synchronous DRAM MT48LC4M32B2 – 1 Meg x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdram Features Figure 1: • PC100 functionality • Fully synchronous; all signals registered on positive

MT48LC2M32B2P

Abstract: MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612
Contextual Info: 64Mb: x32 SDRAM Features Synchronous DRAM MT48LC2M32B2 – 512K x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Table 1: • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock

K4S280832C-TC75

Abstract: M374S1723CTS
Contextual Info: M374S1723CTS PC133 Unbuffered DIMM Revision History Revision 0.0 May, 2000 • PC133 first published. Revision 0.1 (July, 2000) • Added PC100@CL3 data on DC Characteristics, Operating AC Parameter, AC Characteristics. REV. 0.1 July. 2000 M374S1723CTS PC133 Unbuffered DIMM

PC100F5

Abstract: PD100F5 a157
Contextual Info: FRD PC100F5 PD100F5 100A Avg 500 Volts •外形寸法図 OUTLINE DRAWING ■回路図 CIRCUIT （単位 Dimension：mm） PC 2 1 3 PD 2 1 3 ■最大定格 Maximum Ratings 項 目 Parameter 記号 Symbol 耐圧クラス Grade PC100F5/PD100F5

mt48lc32m16a2p-75

Abstract: MT48LC32M16A2P-75C 1m x16 SDRAM MICRON A11 MARKING CODE MT48LC32M16A2P MT48LC128M4A2 MT48LC32M16A2 MT48LC64M8A2 TN-48-05 MT48LC32M16A2P-75 c
Contextual Info: 512Mb: x4, x8, x16 SDRAM Features Synchronous DRAM MT48LC128M4A2 – 32 Meg x 4 x 4 banks MT48LC64M8A2 – 16 Meg x 8 x 4 banks MT48LC32M16A2 – 8 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Options • PC100- and PC133-compliant

M374S3253ATS

Abstract: M374S3253CTU
Contextual Info: M374S3253CTU PC133/PC100 Low Profile Unbuffered DIMM M374S3253ATS SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S3253CTU is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

M390S2858DTU

Abstract: M390S2858DTU-C1H M390S2858DTU-C1L M390S2858DTU-C7A M390S2858DTU-C7C 10D4L PC133 registered reference design
Contextual Info: M390S2858DTU PC133/PC100 Low Profile Registered DIMM M390S2858DTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2858DTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2858DTU consists of eighteen CMOS Stacked

Contextual Info: PC133/PC100 Unbuffered DIMM M374S6453DTS M374S6453DTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S6453DTS is a 64M bit x 72 Synchronous

M366S1623DT0

Abstract: M366S1623DT0-C75 K4S640832D-TC75
Contextual Info: M366S1623DT0 PC133 Unbuffered DIMM Revision History Revision 0.0 June, 1999 • PC133 first published. Revision 0.1 (May, 2000) • Changed tOH parameter from 2.7ns to 3.0ns Revision 0.2 (July, 2000) • Added PC100@CL3 data on DC Characteristics, Operating AC Parameter, AC Characteristics.

M377S2953MT3

Abstract: M377S2953MT3-C1H M377S2953MT3-C1L
Contextual Info: preliminary PC100 Registered DIMM M377S2953MT3 M377S2953MT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2953MT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2953MT3 consists of eighteen CMOS 64Mx8 bit

09005aef811ce1d5

Abstract: MT48LC2M32B2 MT48LC2M32B2TG-7G
Contextual Info: 64Mb: x32 SDRAM SYNCHRONOUS DRAM MT48LC2M32B2 - 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdramds FEATURES • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock

222k

Abstract: 079R PC-100 PC100-222 KO9018
Contextual Info: REVISION DATE REV DESCRPTION ZONE APPVD 6/26/01 III. TIMING I. DESCRIPTION: Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ W9Q316727KD-222K is a 16Mx72 industry standard 168-pin PC100-222 SDRAM ECC DIMM Manufactured with 18 NEC ELPIDA 8Mx8 400-mil TSOPII-54 100 MHz Synchronous DRAM devices of 12-row, 9-column, 4 -bank addresing.

b1a12

Abstract: M390S6450DTU-C7A M390S6450DTU M390S6450DTU-C1H M390S6450DTU-C1L M390S6450DTU-C7C PC133 registered reference design
Contextual Info: M390S6450DTU PC133/PC100 Low Profile Registered DIMM M390S6450DTU SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S6450DTU is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S6450DTU consists of eighteen CMOS 64Mx4 bit

MT48LC2M32B2

Contextual Info: 64Mb: x32 SDRAM SYNCHRONOUS DRAM MT48LC2M32B2 - 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdramds FEATURES • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock

M390S3253CTU

Abstract: M390S3253CTU-C1H M390S3253CTU-C1L M390S3253CTU-C7A M390S3253CTU-C7C PC133 registered reference design
Contextual Info: M390S3253CTU PC133/PC100 Low Profile Registered DIMM M390S3253CTU SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S3253CTU is a 32M bit x 72 Synchronous

MT16LSDF3264

Abstract: MT16LSDF6464 PC133 registered reference design
Contextual Info: PRELIMINARY‡ 256, 512MB x64 SDRAM SODIMM SMALL-OUTLINE SDRAM MODULE MT16LSDF3264(L)HG, MT16LSDF6464(L)HG For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES PIN ASSIGNMENT 144-Pin Small-Outline DIMM • JEDEC-standard, PC100, PC133, 144-pin, smalloutline, dual in-line memory module (SODIMM)

Contextual Info: PC133/PC100 Unbuffered DIMM M374S6453DTS M374S6453DTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S6453DTS is a 64M bit x 72 Synchronous

tsop44 footprint

Abstract: SIEMENS PC100-222-620 TSOP44 Package layout PC100-222-620 TSOP44
Contextual Info: S IE M E N S 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module HYS64/72V2200GU- I/-10 HYS64/72V4220GU- I/-10 168 pin unbuffered DIMM Modules Advanced Inform ation • 168 Pin PC100 and PC66 com patible unbuffered 8 Byte Dual-ln-Line SDRAM Modules

Contextual Info: 168PIN PC100 Unbuffered DIMM 32MB With 4M X16 CL3 TS4MLS64V8Z Description Placement The TS4MLS64V8Z is a 4M x 64 bits Synchronous Dynamic RAM high-density for PC-100.The TS4MLS64V8Z consists of 4pcs CMOS 4Mx16 bits Synchronous DRAMs in TSOP-II 400mil packages and

Contextual Info: 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 Dimensions Description The TS16MLS64V8C2 is a 16M bit x 64 Synchronous Side Millimeters Inches Dynamic RAM high-density for PC-100 CL2. The A 133.35±0.40 5.250±0.016 TS16MLS64V8C2 consists of 8pcs CMOS 8Mx16 bits

Contextual Info: 128MB 168PIN PC100 CL2 SDRAM DIMM With 16M X 8 3.3VOLT TS16MLS64V8D2 Description Placement The TS16MLS64V8D2 is a 16M bit x 64 Synchronous Dynamic RAM high-density for PC-100. The TS16MLS64V8D2 consists of 8pcs CMOS 16Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a

Contextual Info: 168PIN PC100 Registered DIMM 512MB With 32M X 8 CL2 TS64MLR72V8F2 Placement Description The TS64MLR72V8F2 is a 64M bit x 72 Synchronous Dynamic RAM high-density memory registered DIMM module. The TS64MLR72V8F2 consists of 18pcs of CMOS 32Mx8bits Synchronous DRAMs in TSOP-II