PCC103BCT Search Results

48 Ohms Resistors CGS

Abstract: PTF102003 600B microstrip resistor PCC103BCT
Contextual Info: 375D–03, STYLE 1 Package 20275 120 Watts, 21 10-2170 MHz PUSH/PULL LATERAL MOSFET PTF102003 Description Key Features The PTF102003 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold

24co1

Abstract: LM7805T LM7805-TO92 LM7805-TO application notes CS5460 15 1e75 cs 13 02902 MT2113-ND TRANS-2102 CSE187-L
Contextual Info: AN220 Watt-Hour Meter using PIC16C923 and CS5460 FIGURE 1: Authors: WATT-HOUR METER Brett Duane, Stephen Humberd Microchip Technology Inc. OVERVIEW This application note shows how to use a PIC16C923 microcontroller to control operation of the CS5460 power measurement integrated circuit from Cirrus

Unitrode DN-95

Abstract: TAJD107M016 100uF 16V tantalum capacitor 1206 smd led mosfet short circuit protection schematic diagram smd 01 hot UCC3919 UCC3919PW P150FCT-ND DN-95
Contextual Info: DN-95 Design Note UCC3919 Hot Swap Power Manager Evaluation Circuit and List of Materials By Robert B. Diener • On-board 0.01Ω, 1W sense resistor • Choice of manual or automatic reset modes • Choice of 3% duty cycle current limiting or INTRODUCTION

8029 l2 circuit

Abstract: 8029 l2 intel 8258 78055 intel pentium 478 VID0 VID1 P20KACT-ND 4234 6.3mbz1800m8x20 7805 D2PAK 7805 sot23
Contextual Info: NCP5332ADEMO/D Demonstration Note for NCP5332A and NTB85N03 Power Solution for the Intel Pentium 4 Processor http://onsemi.com DEMONSTRATION NOTE • Internal Gate Drivers to Minimize Board Space • 5–Bit DAC with 1% Tolerance • Compatible with the 478–Pin Intel Voltage Transient

sealed lead acid battery 12V 7Ah

Abstract: schematic diagram 12V battery charger regulator 2n2222a smt 8097 microcontroller handshake techniques ups schematic with pic16c73a schematic diagram 48v battery charger lead acid PIC16C711 Battery charger 48 volt circuit diagram data sheet IRF9540 sanyo ni-cd
Contextual Info: M PICREF-2 Intelligent Battery Charger Reference Design INTRODUCTION PICREF-2 OVERVIEW Typically, simple battery chargers do not provide the intelligence to charge different battery technologies or batteries with the same technology but different voltages and capacities. At best, this may leave the battery

PCC103BCT-ND

Abstract: capacitor siemens 4700 35 DD 102 CAPACITOR Siemens Ferrite PA13 0.1 uF 50v CAPACITOR
Contextual Info: PRELIMINARY PTF 102015* GOLDMOS Field Effect Transistor 30 Watts, 2110-2170 MHz Description WCDMA Performance 20 V DS = 28 V IDQ = 320 mA f C = 2170 Efficiency % x 16 -20 12 -35 Efficiency ACPR1 (FC + 5 MHz) 8 -50 4 ACPR2 (FC + 10 MHz) 0.5 1 1.5 2 2.5

smd capa

Abstract: p33k
Contextual Info: Package 20275 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET PD21120R6 Description Key Features The PD21120R6 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold

ICL7663S

Abstract: HI2303 ICL7663 3296W 5K Potentiometer 500k HARRIS SEMICONDUCTOR APPLICATION NOTES Resistor 3296W 10k CD74FCT241DTM 3296W BOURNS
Contextual Info: [ /Title AN9 783 /Subject (HI23 03 Evaluation Board ) /Auth or () /Keywords () /Creator () HI2303 Evaluation Board Semiconductor Application Note Introduction The HI2303 evaluation kit can be used to examine the performance of the HI2303 triple 8-bit analog to digital converter (ADC). The evaluation board includes a buffered clock

capacitor 100uF 50V

Abstract: resistor 220 ohm resistor qbk PTF 10154 capacitor 10uf DIGIKEY
Contextual Info: PTF 10154 85 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10154 is an internally matched 85–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This device operates at 43% efficiency with 11 dB gain. Nitride surface

smd transistor marking l6

Abstract: TRANSISTOR SMD 2X K PCC103BCT marking us capacitor pf l1 smd marking f2 PTF180601 PTF180601C PTF180601E 32 z 45 SMD TRANSISTOR MARKING l4
Contextual Info: PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability.

PTF210301E

Contextual Info: PTF210301E PTF210301F High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz Description The PTF210301E and PTF210301F are 30-watt, internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation

Contextual Info: PTF 102098 LDMOS RF Power Field Effect Transistor 90 Watts, 1805–1880 MHz, 1930–1990 MHz Description The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS or PCS bands. This LDMOS device operates at 47% efficiency P–1dB and 14.5 dB linear gain. Full

smd TRANSISTOR 1702

Contextual Info: Preliminary PTF180901A High Power RF LDMOS Field Effect Transistor 90 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180901A is a 90-watt, internally-matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.

22W8

Contextual Info: PTF180601C LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180601C is a 60–W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability.

resistor 680 ohm

Abstract: BS121-ND PCB301 J101-J104 PVC Pipe capacitor 476 10V PCS5106CT-ND 680 ohms resistor 5 watt datasheet 476 capacitor 2.2 k ohm resistor
Contextual Info: Fiber Optic Probe Details Terry Fritz 8-17-1999 Rev. 4 VI Probe Theory The VI Probe consists of three main parts. There is a transducer that turns either high voltages or high currents into smaller signals. A transmitter that takes the small signal from the transducer and converts it into an analog light

PTF210301E

Abstract: marking us capacitor pf l1 PTF210301 PTF210301A DD 127 D TRANSISTOR
Contextual Info: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

HI2303EVAL

Abstract: RBS 2303 HI2303 ICL7663 ICL7663S Resistor 3296W 10k Potentiometer 500k
Contextual Info: HI2303 Evaluation Board Application Note Introduction The HI2303 evaluation kit can be used to examine the performance of the HI2303 triple 8-bit analog to digital converter ADC . The evaluation board includes a buffered clock driver, voltage reference, triple A/D converter, data latches and

Contextual Info: 120 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102003 Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold

rogers 4003 characteristics

Contextual Info: PTF 102003 LDMOS RF Power Field Effect Transistor 120 Watts, 2110–2170 MHz Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P–1dB and 14 dB linear gain. Full gold

130-watt

Abstract: CDG 20260
Contextual Info: PTF 102093 LDMOS RF Power Field Effect Transistor 130 Watts, 2110–2170 MHz Description Key Features The PTF 102093 is a 130–watt, GOLDMOS FET intended for WCDMA applications. The device is characterized for single– and two–carrier WCDMA operation in the 2110 to 2170 MHz band. Full

Contextual Info: PTF 102022 LDMOS RF Power Field Effect Transistor 180 Watts, 2110–2170 MHz Description Key Features The PTF 102022 is a 180 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. A laterally double– diffused push–pull FET, it operates with 14 dB linear gain. Full gold

schematic diagram 48v battery charger lead acid

Abstract: 48V 20A switching sealed lead acid battery charger schematic diagram 2n2222a smt sealed lead acid battery 12V 7Ah ups schematic with pic16c73a CHY17 PIC16C73P duracell dr15 sanyo ni-cd Duracell dr35
Contextual Info: M PICREF-2 Intelligent Battery Charger Reference Design INTRODUCTION PICREF-2 OVERVIEW Typically, simple battery chargers do not provide the intelligence to charge different battery technologies or batteries with the same technology but different voltages and capacities. At best, this may leave the battery

24co1

Abstract: Datasheet lm7805 to92 LM7805-TO tai 24c01 application notes CS5460 02634 Bin2BCD16 24C01* serial eeprom LM7805T eeprom 2416 wp
Contextual Info: AN220 Watt-Hour Meter using PIC16C923 and CS5460 FIGURE 1: Authors: WATT-HOUR METER Brett Duane, Stephen Humberd Microchip Technology Inc. OVERVIEW This application note shows how to use a PIC16C923 microcontroller to control operation of the CS5460 power measurement integrated circuit from Cirrus

rf mosfet ericsson

Contextual Info: PTF 10153 60 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10153 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output.