PCHANNEL ENHANCEMENT MOSFET Search Results

MARKING CFK

Abstract: code cfk marking code CFK Complementary MOSFETs P-Channel 1.8V MOSFET TLM832D
Contextual Info: CTLDM7181-M832D SURFACE MOUNT TLMTM N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7181M832D is a Dual complementary N-Channel and PChannel Enhancement-mode MOSFET, designed for

Contextual Info: IRF9520 S e m iconductor April 1999 Data Sheet -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are PChannel enhancement mode silicon gate power field effect

Contextual Info: FRX130D, FRX130R, FRX130H Radiation Hardened N-Channel Power MOSFETs December 2001 Features Description • 6A, 100V, rDS ON = 0.180Ω Fairchild has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and PChannel enhancement types with ratings from 100V to

SPP9527

Abstract: P-Channel mosfet 40V mosfet gate source voltage 20v P-Channel Enhancement Mode
Contextual Info: SPP9527 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9527 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPP5413

Abstract: P-Channel mosfet 40V mosfet p-channel 10A
Contextual Info: SPP5413 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP5413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPP5413 has been designed specifically to improve the overall

MARKING 4A sot-563

Abstract: P-channel Dual MOSFET VGS -25V 035a lcd
Contextual Info: SPP1023 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1023 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

SPP1013

Abstract: SC-89 SPP1013S52RG P-CHANNEL SPP1013S52RGB
Contextual Info: SPP1013 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

SPP9435S8RGB

Abstract: SPP9435 SPP9435S8RG SPP9435S8TG
Contextual Info: SPP9435 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

20V P-Channel Power MOSFET high current

Abstract: P-CHANNEL SC89 Switching Power P-channel SC-89 SPP1013 SPP1013S52RG P-CHANNEL
Contextual Info: SPP1013 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

SPP6506S26RG

Abstract: SPP6506 P-Channel Junction Field Effect Transistors sot-23 MARKING CODE G1 06YW
Contextual Info: SPP6506 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6506 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

MOSFET

Abstract: SPP2309 SPP2309S23RG Mosfet 1 cell switch low voltage low resistance
Contextual Info: SPP2309 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Dual P-Channel mosfet sot-363

Abstract: SC-70-6L SPP6308 SPP6308S36RG
Contextual Info: SPP6308 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6308 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

SPP2301

Abstract: SPP2301S23RG
Contextual Info: SPP2301 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPP9437

Abstract: SPP9437S8RG SPP9437S8TG
Contextual Info: SPP9437 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9437 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPP4953A

Abstract: SPP4953AS8RG SPP4953AS8TG
Contextual Info: SPP4953A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4953A is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to

SPP3413

Abstract: SPP3413S23RG
Contextual Info: SPP3413 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

P-channel power mosfet 30V

Abstract: SPP3403 SPP3403S23RG
Contextual Info: SPP3403 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

P-Channel Junction Field Effect Transistors

Abstract: SPP4925 Dual P-Channel MOSFET 30v
Contextual Info: SPP4925 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4925 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to

SPP4953S8RG

Abstract: SPP4953S8RGB SPP4953
Contextual Info: SPP4953 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4953 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to

spp4435b

Abstract: SPP4435
Contextual Info: SPP4435B P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4435B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPP2341

Abstract: MOSFET SPP2341S23RGB 41YW SPP2341S23RG P-Channel MOSFET 12V SOT 23 NO32
Contextual Info: SPP2341 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2341 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPP1433

Abstract: SPP1433S32RG marking td sot323 226 SOT-323
Contextual Info: SPP1433 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1433 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPP9435A

Abstract: SPP9435AS8RG SPP9435AS8TG SPP9435
Contextual Info: SPP9435A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9435A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

mosfet sot353

Abstract: p-channel mosfet sot-353 he Inverter P-Channel 1.8V MOSFET SPP1413A SPP1413AS35RG marking nc sot-353 sot-353 marking code
Contextual Info: SPP1413A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1413A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.