PD43 Search Results

IC-8815

Abstract: IC-3242 8815 k PD431008 UPD431008LE-15 PD431008LE-15 ic8815
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description The µPD431008 is a high speed, low power, 1 048 576 bits 131 072 words by 8 bits CMOS static RAM. The µPD431008 is packed in 32-pin plastic SOJ. Feature

Contextual Info: EVERLIGHT ELECTRONICS CO., LTD. Device Number: DPD-043-020 PD438B/L2 ECN: MODEL NO: REV: Page: Package Dimensions: 3.80±0.2 Color Mark Sensitive Surface 1.5Max 6.60±0.3 4.8±0.2 1 1.0Min 2 2.54 1 14.5Min 0.5± 0.1 1 2 2 Anode Cathode Office: NO 25,Lane.76, Chung Yang Rd., Sec.3, Tucheng, Taipei 236, Taiwan, R.O.C.

PD438C-S46

Contextual Info: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DPD-043-061 REV : PAGE : 1.0 1/7 4.8mm Semi-Lens Silicon PIN Photodiode MODEL NO : PD438C/S46 █ Features : •Fast response times •High photo sensitivity •Small junction capacitance █ Description :

Contextual Info: EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: Device Number: DPD-043-054 PD438B/C2/L1 ECN: REV: Page: Package Dimensions: 3.80±0.2 Color Mark Sensitive Surface 1.5Max 6.60±0.3 4.8±0.2 1 1.0Min 2 2.54 1 14.5Min 0.5± 0.1 1 2 2 Anode Cathode Office: NO 25,Lane.76, Chung Yang Rd., Sec.3, Tucheng, Taipei 236, Taiwan, R.O.C.

pbei

Abstract: pbei 5 pin E3K12 AD20a uPD43608
Contextual Info: \A J 5 Y * ¿/PD43608 SINGLE-CHIP c a c h e s u b s y s te m NEC Electronics Inc. Description O rganization The^/PD43608 is an integrated cache subsystem that provides the m icroprocessor system designer with a high-performance, single-chip, general-purpose cache

d431008

Contextual Info: DATA SHEET Æ MOS INTEGRATED CIRCUIT C ¿¿PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description The ¿PD431008 is a high speed, lo w po w e r, 1 048 576 b its 131 072 w o rd s by 8 bits CMOS s ta tic RAM. The jt/PD431008 is packed in 32-pin p la stic SOJ.

nec a2c-45770

Abstract: nec A2C
Contextual Info: SEC #PD43258 32,768 x 8-Bit Static CMOS RAM NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The f*PD43258 is a 32,768-word by 8-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to make

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT n PD43257B 256K-BIT CMOS STATIC RAM 32K-W ORD BY 8-BIT Description The ¿¡PD43257B is a high speed, low power, and 262,144 bits 32,768 w ords by 8 bits CM OS static RAM. Battery backup is available (L, LL versions). And this product has tw o chip enable pins (CE1, CE2) to extend

Contextual Info: Technical Data Sheet 4.8mm Semi-Lens Silicon PIN Photodiode PD438B Features ․Fast response times ․High photo sensitivity ․Small junction capacitance ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions PD438B is a high speed and sensitive PIN photodiode in a cylindrical side

PD438C

Contextual Info: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DPD-043-021 REV : PAGE : 1.1 1/7 4.8mm Semi-Lens Slicon PIN Photodiode MODEL NO : PD438C █ Features : •Fast response time •High photo sensitivity •Small junction capacitance █ Description : PD438C is a high speed and sensitive PIN photodiode in a cylindrical side view

D431000A

Abstract: d431000 PD431000A upd431000a
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431000A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT Description The µPD431000A is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The µPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In

Contextual Info: PD43_07 POW-R-BLOKTM Dual SCR Isolated Module 700 Amperes / Up to 1800 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Description: Powerex Dual SCR Modules are designed for use in applications requiring phase control

d43257

Abstract: UPD43257 D43257B P28C-100-600A1-1
Contextual Info: MOS INTEGRATED CIRCUIT µ PD43257B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The µPD43257B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available (L, LL versions). And this product has two chip enable pins (CE1, CE2) to extend

PD438B-C1

Contextual Info: Technical Data Sheet 4.8mm Semi-Lens Silicon PIN Photodiode PD438B/C1 Features ․Fast response times ․High photo sensitivity ․Small junction capacitance ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions PD438B/C1 is a high speed and sensitive PIN photodiode in a cylindrical side

D43256B

Abstract: D43256
Contextual Info: NEC PD43256B 32,768 x 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The f j PD43256B is a 32,768-word by 8-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to

Contextual Info: PD43_06 TM POW-R-BLOK Dual SCR Isolated Module 600 Amperes / Up to 2400 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: Powerex Dual SCR Modules are designed for use in applications requiring phase control

IGBT module 700a

Abstract: SCR 106 B scr 106 C scr 106 PD431807
Contextual Info: PRELIMINARY Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 PD43_07 TM POW-R-BLOK Dual SCR Isolated Module 700 Amperes / Up to 1800 Volts Description: Powerex Dual SCR Modules are designed for use in applications requiring phase control and isolated

PD432406

Contextual Info: PD43_06 POW-R-BLOKTM Dual SCR Isolated Module 600 Amperes / Up to 2400 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: Powerex Dual SCR Modules are designed for use in applications requiring phase control

d4364

Contextual Info: NEC NEC Electronics Inc. //P D 4 3 6 4 8 1 9 2 X 8 -B IT STATIC M IX -M O S RAM Decem b er 1987 D escription Pin C o n fig u ratio n The/L/PD4364 is a high-speed, 8192-word by 8-bit static RAM fabricated w ith advanced silicon -ga te MIX-MOS tech nolog y. Its unique c ircu itry, using N-channel

Contextual Info: P PD43254B 65,536 X 4-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The /PD43254B is a 65,536-word by 4-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells with polysilicon resistors make the PD43254B a high­

uPD434008LE-25

Abstract: IC-8528 uPD434008-20 IC852 upd434008 PD434008LE
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD434008 4M-BIT CMOS FAST STATIC RAM 512K-WORD BY 8 BITS Description The µPD434008 is a high speed, low power, 4 194 304 bits 524 288 words by 8 bits CMOS static RAM. The µPD434008 is packed in 36-pin plastic SOJ. Features

IC-8527

Abstract: IC-2996 UPD434004 k 2996 PD434004
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD434004 4M-BIT CMOS FAST STATIC RAM 1M-WORD BY 4 BITS Description The µPD434004 is a high speed, low power, 4 194 304 bits 1 048 576 words by 4 bits CMOS static RAM. The µPD434004 is packed in 32-pin plastic SOJ. Features

IC-8817

Abstract: IC-3237
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The µPD431009 is a high speed, low power, 1 179 072 bits 131 072 words by 9 bits CMOS static RAM. The µPD431009 is packed in 36-pin plastic SOJ. Feature

Contextual Info: PRELIMINARY Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 PD43_06 POW-R-BLOKTM Dual SCR Isolated Module 600 Amperes / Up to 2400 Volts Description: Powerex Dual SCR Modules are designed for use in applications requiring phase control and isolated