PD840 Search Results

Contextual Info: PD84010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V ■ Plastic package

smd c8f

Abstract: A1 AMP RF SOT89 smd code c9f SMD CODE vapc C2f SOT-89 murata filter 104 "RF Power Amplifier" Coilcraft GRM1885C1H2R2CZ01 GRM1885C1H3R9CZ01
Contextual Info: STEVAL-TDR001V1 2 stage RF power amp: PD84001 + PD54003L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.2 V ■ Output power: 4 W ■ Current < 1.6 A ■ Input power < 10 dBm

Contextual Info: STEVAL-TDR003V1 2-stage RF power amp: PD84001 + PD54008L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.2 V ■ Output power: 5 W ■ Current < 1.5 A ■ Input power < 10 dBm

H2 SOT-89 RF amplifier

Abstract: 3214W-1-103E EXCELDRC35C GRM39-C0G3R3C50Z500 GRM39-X5R105K16D52K PD84002 grm39 panasonic inductor date code
Contextual Info: STEVAL-TDR013V1 Demonstration board using the PD84002 for UHF RFID reader Features • Excellent thermal stability ■ Frequency: 8 ■ 860 - 960 MHz ■ Supply voltage: 7.2 V ■ Output power: 2 W ■ Power gain: 13.9 ± 0.5 dB ■ Efficiency: 60 % - 63 %

PD84006L

Abstract: PD84006L-E PD84008L-E GRM39C0G151J50D500 GRM39-X7R103K50C560
Contextual Info: STEVAL-TDR020V1 Portable UHF 2-way radio demonstration board based on the PD84006L-E Features • Excellent thermal stability ■ Frequency: 740 - 950 MHz ■ Supply voltage: 7.2 V ■ Output power: 4 W ■ Power gain: 12.3 ± 0.3 dB ■ Efficiency: 50 % - 57 %

rfid reader schematic steval-tdr017v1

Abstract: PD84001 UHF rfid reader GRM39X5R105K16D52K 3214W-1-103E EXCELDRC35C GRM39-C0G6R8D50Z500 GRM39-X5R105K16D52K
Contextual Info: STEVAL-TDR017V1 Demonstration board using the PD84001 for UHF RFID reader and 2-way radio Features • Excellent thermal stability ■ Frequency: 860 - 960 MHz ■ Supply voltage: 7.2 V ■ Output power: 1 W ■ Power gain: 14.6 ± 0.4 dB ■ Efficiency: 51 % - 53 %

PD54003L

Contextual Info: AB-54008L-175 2 stages RF power amp: PD84001-E + PD54008L-E + LPF N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 135 - 175MHz ■ Supply voltage: 7.2V ■ Output power: 5W ■ Current < 1.5A ■ Input power < 10dBm

NEOHM CRG 0603 thick film resistor

Abstract: PD84001 C2f SOT-89 C5F sot smd c2f AB-54008L-175 GRM1885C1H3R3CZ01 PD54008L-E PD84001-E
Contextual Info: AB-54008L-175 2 stages RF power amp: PD84001-E + PD54008L-E + LPF N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 135 - 175MHz ■ Supply voltage: 7.2V ■ Output power: 5W ■ Current < 1.5A ■ Input power < 10dBm

murata REEL label

Abstract: GRM39-X5R105K16D52K DB-84001-520 H3 SOT-89 PD84001 H2 SOT-89 RF amplifier 3214W-1-103E EXCELDRC35C grm39
Contextual Info: DB-84001-520 Evaluation board using PD84001 for 2-ways radio Features • Excellent thermal stability ■ Frequency: 380 - 520 MHz ■ Supply voltage: 7.2 V ■ Output power: 1 W ■ Power gain: 15.5 ± 0.7 dB ■ Efficiency: 58 % - 67 % ■ Load mismatch: 20:1

Contextual Info: STEVAL-TDR027V1 Portable UHF 2-way radio demonstration board based on the PD84008L-E Features • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.2 V ■ Output power: > 6 W ■ Power gain: 11.7 ± 0.5 dB ■ Efficiency: 46% - 71%

3224W-1-103

Abstract: DB-84008L-870 EEVHB1V100P EXCELDRC35C GRM110C0G3R9C50 PD84008L-E J2841 PD84008L 10.7 murata grm39
Contextual Info: DB-84008L-870 Evaluation board using PD84008L-E for 900 MHz 2-way radio Features • Excellent thermal stability ■ Frequency: 760 - 870 MHz ■ Supply voltage: 7.4 V ■ Output power: 7 W ■ Power gain: 10.7 ± 0.7 dB ■ Efficiency: 46 % - 51% ■ Load mismatch 20:1

GQM1885C1H8R2D

Abstract: 3214W-1-103E DB-84006L-950 EEVHB1V100P EXCELDRC35C PD84006L-E grm39
Contextual Info: DB-84006L-950 Evaluation board using PD84006L-E for 900 MHz 2-way radio Features • Excellent thermal stability ■ Frequency: 740 - 950 MHz ■ Supply voltage: 7.2 V ■ Output power: 4 W ■ Power gain: 12.3 ± 0.3 dB ■ Efficiency: 50 % - 57 % ■ Load mismatch 20:1

NEOHM CRG 0603 thick film resistor

Abstract: GRM1885C1H3R3CZ01 a05t C2f SOT-89 smd c2f PD54008L-E PD84001 STEVAL-TDR00 C6f TRANSISTOR smd transistor code 621
Contextual Info: STEVAL-TDR003V1 2-stage RF power amp: PD84001 + PD54008L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.2 V ■ Output power: 5 W ■ Current < 1.5 A ■ Input power < 10 dBm

J449

Abstract: AS030721-39N J657 korin 3214W-1-103E DB-84006L-175 EXCELDRC35C PD84006L-E transistor l54 J387
Contextual Info: DB-84006L-175 Evaluation board using PD84006L-E for VHF 2-way radio Features • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.2 V ■ Output power: 5 W ■ Power gain: 14.0 ± 0.8 dB ■ Efficiency: 59 % - 68 % ■ Load mismatch: 10:1 all phases

Contextual Info: PD84008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 14.7 dB gain @ 870 MHz / 7.5 V ■ Plastic package

rfid reader schematic steval-tdr017v1

Abstract: UHF RFID reader circuit digram of power supply PD84001 STEVAL-TDR017V1 UHF rfid circuit circuit digram of rfid steval-tdr017v1 rfid reader schematic circuit digram of steval-tdr017v1
Contextual Info: STEVAL-TDR017V1 Demonstration board using the PD84001 for a UHF RFID reader Data brief Features • Excellent thermal stability ■ Frequency: 860 - 960 MHz ■ Supply voltage: 7.2 V ■ Output power: 1 W ■ Power gain: 14.6 ± 0.4 dB ■ Efficiency: 51 % - 53 %

PD84001

Abstract: LDMOS DB-84001-960
Contextual Info: D B -84001-960 Schematic MSub R3 FR4 H =20 mil R2 C1 - •-ItR1 R Fin C4 ■r— t— t TL1 - ± - TL2 -± - Tc6 T ct t ~ ~ TL4 Vcc B2 B1 ' J * C3 C2 L1 T4- k i-i TL5 PD84001 J cj T L6 C9 LDMOS ■ » - 1- i/* <Z> » f t TL7 c„J - 1- C5 R F out

SMD MARKING GP TRANSISTOR

Abstract: J-STD-020B PD84008L-E st 84008
Contextual Info: RefTitle1 PD84008L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V ■ Plastic package ■ ESD protection

Contextual Info: STEVAL-TDR020V1 Portable UHF 2-way radio demonstration board based on the PD84006L-E Features • Excellent thermal stability ■ Frequency: 740 - 950 MHz ■ Supply voltage: 7.2 V ■ Output power: 4 W ■ Power gain: 12.3 ± 0.3 dB ■ Efficiency: 50 % - 57 %

PD84002

Abstract: H2 SOT-89 RF amplifier 3214W-1-103E DB-84002-960 EXCELDRC35C GRM39-C0G3R3C50Z500 GRM39-X5R105K16D52K UHF rfid reader grm39
Contextual Info: DB-84002-960 Evaluation board using PD84002 for UHF RFID reader Features • Excellent thermal stability ■ Frequency: 860 - 960 MHz ■ Supply voltage: 7.2 V ■ Output power: 2 W ■ Power gain: 13.9 ± 0.5 dB ■ Efficiency: 60 % - 63 % ■ Load mismatch: 20:1

PD84001

Abstract: UHF rfid reader 3214W-1-103E DB-84001-960 EXCELDRC35C GRM39-C0G6R8D50Z500 GRM39-X5R105K16D52K H2 SOT-89 RF amplifier grm39 GRM39-C0G100D50D500
Contextual Info: DB-84001-960 Evaluation board using PD84001 for UHF RFID reader Features • Excellent thermal stability ■ Frequency: 860 - 960 MHz ■ Supply voltage: 7.2 V ■ Output power: 1 W ■ Power gain: 14.6 ± 0.4 dB ■ Efficiency: 51 % - 53 % ■ Load mismatch: 20:1

Contextual Info: PD84001 RF power transistor the LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 1 W with 15 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel

DB-84001-520

Abstract: B2B1
Contextual Info: DB-84001-520 Schematic Vcc 1+ MSub 2- R3 B2 B1 C3 FR4 H=20 mil R2 C1 L1 C2 R1 TL5 TL6 L3 TL7 C9 RFin C4 TL1 C6 TL2 C7 L2 C8 TL3 TL4 LDMOS PD84001L C5 C10 RFout

smd transistor 12W 13

Abstract: AN1294 JESD97 J-STD-020B PD84008-E
Contextual Info: PD84008-E PD84008S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 14.7 dB gain @ 870 MHz / 7.5 V ■ Plastic package