PDE 120 Search Results

MBN600GR12A

Abstract: Hitachi DSA0047
Contextual Info: PDE-N600GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN600GR12A [Rated 600A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.

MBM100GR12A

Abstract: Hitachi DSA0047
Contextual Info: PDE-M100GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM100GR12A [Rated 100A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD

hitachi igbt

Abstract: IGBT 1200A MBN1200GR12A Hitachi DSA0047
Contextual Info: PDE-N1200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN1200GR12A [Rated 1200A/1200V, Single-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.

MBN400GR12A

Abstract: Hitachi DSA0047
Contextual Info: PDE-N400GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN400GR12A [Rated 400A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.

PDE-N600GR12A-0

Abstract: MBN600GR12A MBN600GR12
Contextual Info: PDE-N600GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN600GR12A [Rated 600A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.

MBM150GR12A

Abstract: Hitachi DSA0047
Contextual Info: PDE-M150GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM150GR12A [Rated 150A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD

fast recovery diode 600v 1200A

Abstract: diode current 1200A MBN1200GR12A IGBT 1200A PDE-N1200GR12A-0 IGBT 1200A 600V
Contextual Info: PDE-N1200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN1200GR12A [Rated 1200A/1200V, Single-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.

ETON

Abstract: MBN400GR12A PC2500
Contextual Info: PDE-N400GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN400GR12A [Rated 400A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.

MBM200GR12A

Abstract: Hitachi DSA0047
Contextual Info: PDE-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD

mbm150gr12

Abstract: MBM150GR12A MBM150
Contextual Info: PDE-M150GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM150GR12A [Rated 150A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD

MBM200GR12A

Contextual Info: PDE-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD

MBM100GR12

Abstract: MBM100GR12A
Contextual Info: PDE-M100GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM100GR12A [Rated 100A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD

MBM300GR12A

Contextual Info: PDE-M300GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM300GR12A [Rated 300A/1200V, Dual-pack type] OUTLINE DRAWING Unit in mm 110 93 25 E2 C1 80 62 C2E1 4-Fast-on Terminal #110 25 E2 G2 4- φ 6.5 CIRCUIT DIAGRAM G2 E2 E2 3-M6 C1 18 18 18 46.5 φ 0.8

MBM300GR12A

Abstract: Hitachi DSA0047
Contextual Info: PDE-M300GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM300GR12A [Rated 300A/1200V, Dual-pack type] OUTLINE DRAWING Unit in mm 110 93 25 E2 C1 80 62 C2E1 4-Fast-on Terminal #110 25 E2 G2 4- φ 6.5 CIRCUIT DIAGRAM G2 E2 E2 3-M6 C1 18 18 18 46.5 φ 0.8

VT244A

Abstract: 72V1
Contextual Info: 16M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information • 16 777 216 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time

vt244a

Contextual Info: 8M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V8000GS-50/-60 HYM 72V8010GS-50/-60 Preliminary Information • 8 388 608 words by 72-bit ECC - mode, one bank organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)

PQ62

Abstract: DQ73
Contextual Info: 168 Pin DIMM Characteristics. 168 Pin Buffered DIMM Characteristics Basic Architecture ECC Data Bit Assignments DRAM CHIPS Intended primarily for use in 8-byte systems, although use in 4-byte systems is supported via onboard interleave, the basic structure of 168 pin

74ABT244

Contextual Info: 1M x 72-Bit Dynamic RAM Module ECC - Module HYM 721000GS-60/-70 HYM 721010GS-60/-70 Advanced Information • 1 048 576 words by 72-bit ECC - mode organization • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time

q207

Abstract: VT244A DM1687
Contextual Info: 16M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information • 16 777 216 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM64400 Product Preview 4M x 64 Bit Dynamic Random Access Memory Module The MCM64400 is a dynamic random access memory DRAM module organized as 4,194,304 x 64 bits. The module is a JED EC -standard 168-lead d u a l-in -lin e memory module (DIMM) with 84 separate contacts per side, consist­

Contextual Info: 4M x 72-Bit EDO-DRAM Module ECC - Module HYM 72V4005GS-50/-60 HYM 72V4015GS-50/-60 168 pin buffered DIMM Module Advanced Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 4M x 72 organisation • Optimized for ECC applications

Contextual Info: 16M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V1620GS-50/-60 HYM 72V1630GS-50/-60 Advanced Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 16M x 72 organisation • Optimized for ECC applications • Fast Page Mode Operation

Contextual Info: SIEMENS 2M x 72-Bit Dynamic RAM EDO Module ECC - Module HYM 72V2005GS-50/-60 168 pin buffered DIMM Module Preliminary Information • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 2 M x 72 organisation • Optimized for ECC applications

bj 94 131- 6

Abstract: LV244A
Contextual Info: 4M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V4000GS-50/-60 HYM 72V4010GS-50/-60 • 168 pin 4 194 304 words by 72-bit ECC - mode organization for PC main memory applications • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)