PDTA114ES |
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Philips Semiconductors
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PNP Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 10 kohm |
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82.86KB |
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PDTA114ES |
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Philips Semiconductors
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PNP resistor-equipped transistor |
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56.93KB |
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PDTA114ES |
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Philips Semiconductors
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RESISTOR-EQUIPPED TRANSISTORS |
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4.38KB |
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PDTA114ES,126 |
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Philips Semiconductors
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 500MW TO92-3 |
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PDTA114ES AMO |
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NXP Semiconductors
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PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTC114ES ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: PNP ; Ptot max: 500 mW; Resistor ratio: 1 ; VCEO max: 50 V |
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101.05KB |
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PDTA114ESAMO |
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Philips Semiconductors
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PNP resistor-equipped transistor |
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Original |
PDF
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56.93KB |
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