PDTC114EK |
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NXP Semiconductors
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PDTC114EK - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EK ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 250 mW; Resistor ratio: 1 ; VCEO max: 50 V |
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730.96KB |
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PDTC114EK |
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Philips Semiconductors
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NPN Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 10 kohm |
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82.93KB |
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PDTC114EK |
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Philips Semiconductors
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NPN resistor-equipped transistor |
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55.53KB |
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PDTC114EK,115 |
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Philips Semiconductors
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SMT3 |
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PDTC114EK,135 |
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Philips Semiconductors
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SMT3 |
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PDTC114EKT4 |
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Philips Semiconductors
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NPN resistor-equipped transistor |
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55.53KB |
8 |
PDTC114EKT/R |
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NXP Semiconductors
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NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EK ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 250 mW; Resistor ratio: 1 ; VCEO max: 50 V |
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100.88KB |
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